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Electronic structure of (Ca0.85La0.15)FeAs2

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Martensitic transformation and shape memory effect in a ferromagnetic shape memory alloy: Mn2NiGa

Applied physics letters, 2005-12, Vol.87 (26)

2005

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Martensitic transformation and shape memory effect in ferromagnetic Heusler alloy Ni2FeGa

Applied physics letters, 2003-01, Vol.82 (3), p.424-426

2003

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Large magnetoresistance in single-crystalline Ni50Mn50−xInx alloys (x=14–16) upon martensitic transformation

Applied physics letters, 2006-10, Vol.89 (16)

2006

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Orbital characters and near two-dimensionality of Fermi surfaces in NaFe1−xCoxAs

Applied physics letters, 2012-11, Vol.101 (20)

2012

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Magnetic field-induced martensitic transformation and large magnetoresistance in NiCoMnSb alloys

Applied physics letters, 2007-06, Vol.90 (24), p.242501-242501-3

2007

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Giant exchange bias in Mn2FeGa with hexagonal structure

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

Applied physics letters, 2011-04, Vol.98 (16)

2011

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Magnetic field-controlled two-way shape memory in CoNiGa single crystals

Applied physics letters, 2004-05, Vol.84 (18), p.3594-3596

2004

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Giant magnetostriction on Fe85Ga15 stacked ribbon samples

Applied physics letters, 2004-03, Vol.84 (12), p.2124-2126

2004

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Large negative magnetoresistance in quaternary Heusler alloy Ni50Mn8Fe17Ga25 melt-spun ribbons

Applied physics letters, 2005-05, Vol.86 (18)

2005

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Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar

Applied physics letters, 2013-01, Vol.102 (4)

2013

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Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon

Applied physics letters, 2007-04, Vol.90 (17)

2007

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Superelasticity of CoNiGa:Fe single crystals

Applied physics letters, 2005-09, Vol.87 (11), p.112504-112504-3

2005

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Magnetic properties and shape memory of Fe-doped Ni52Mn24Ga24 single crystals

Applied physics letters, 2002-01, Vol.80 (4), p.634-636

2002

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Large magnetostriction in Fe100−xAlx(15⩽x⩽30) melt-spun ribbons

Applied physics letters, 2004-09, Vol.85 (10), p.1751-1753

2004

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Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

Applied physics letters, 2006-01, Vol.88 (2)

2006

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High temperature power performance of AlGaN∕GaN high-electron-mobility transistors on high-resistivity silicon

Applied physics letters, 2007-08, Vol.91 (8)

2007

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Pressure tunes atomic packing in metallic glass

Applied physics letters, 2006-04, Vol.88 (17), p.171906-171906-3

2006

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Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

Applied physics letters, 2011-03, Vol.98 (11)

2011

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Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Applied physics letters, 2009-11, Vol.95 (22)

2009

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Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique

Applied physics letters, 1990-11, Vol.57 (21), p.2217-2219

1990

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Off-state leakage currents in n-channel metal-oxide-semiconductor field-effect transistors with 10-nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

Applied physics letters, 1991-12, Vol.59 (23), p.3006-3008

1991

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High resolution, high collection efficiency in numerical aperture increasing lens microscopy of individual quantum dots

Applied physics letters, 2005-08, Vol.87 (7), p.071905-071905-3

2005

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Lack of the critical pressure for weakening of size-induced stiffness in 3C–SiC nanocrystals under hydrostatic compression

Applied physics letters, 2004-09, Vol.85 (11), p.1973-1975

2004

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Electronic structure of (Ca0.85La0.15)FeAs2

Martensitic transformation and shape memory effect in a ferromagnetic shape memory alloy: Mn2NiGa

Martensitic transformation and shape memory effect in ferromagnetic Heusler alloy Ni2FeGa

Large magnetoresistance in single-crystalline Ni50Mn50−xInx alloys (x=14–16) upon martensitic transformation

Orbital characters and near two-dimensionality of Fermi surfaces in NaFe1−xCoxAs

Magnetic field-induced martensitic transformation and large magnetoresistance in NiCoMnSb alloys

Giant exchange bias in Mn2FeGa with hexagonal structure

Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

Magnetic field-controlled two-way shape memory in CoNiGa single crystals

Giant magnetostriction on Fe85Ga15 stacked ribbon samples

Large negative magnetoresistance in quaternary Heusler alloy Ni50Mn8Fe17Ga25 melt-spun ribbons

Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar

Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon

Superelasticity of CoNiGa:Fe single crystals

Magnetic properties and shape memory of Fe-doped Ni52Mn24Ga24 single crystals

Large magnetostriction in Fe100−xAlx(15⩽x⩽30) melt-spun ribbons

Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

High temperature power performance of AlGaN∕GaN high-electron-mobility transistors on high-resistivity silicon

Pressure tunes atomic packing in metallic glass

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique

Off-state leakage currents in n-channel metal-oxide-semiconductor field-effect transistors with 10-nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

High resolution, high collection efficiency in numerical aperture increasing lens microscopy of individual quantum dots

Lack of the critical pressure for weakening of size-induced stiffness in 3C–SiC nanocrystals under hydrostatic compression

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