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Low-temperature migration enhanced epitaxy of base material for AlGaAs/GaAs heterojunction bipolar transistors

Applied physics letters, 1993-08, Vol.63 (6), p.809-811

1993

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The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Applied physics letters, 2021-05, Vol.118 (22)

2021

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Dislocation core structures in Si-doped GaN

Applied physics letters, 2015-12, Vol.107 (24)

2015

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Surface effects on the radiation response of nanoporous Au foams

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Coherent thermal emission from one-dimensional photonic crystals

Applied physics letters, 2005-08, Vol.87 (7), p.071904-071904-3

2005

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Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

Applied physics letters, 2024-07, Vol.125 (4)

2024

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Magnetic phase transitions in Ta/CoFeB/MgO multilayers

Applied physics letters, 2015-05, Vol.106 (19)

2015

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Radiation induced effects on mechanical properties of nanoporous gold foams

Applied physics letters, 2014-06, Vol.104 (23)

2014

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ZnO film thickness effect on surface acoustic wave modes and acoustic streaming

Applied physics letters, 2008-09, Vol.93 (9)

2008

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Investigation of Pt/Pb(Zr0.2Ti0.8)O3/Ti-Al-O/Si heterostructure as metal/ferroelectric/insulator/semiconductor

Applied physics letters, 2014-01, Vol.104 (4)

2014

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Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells

Applied physics letters, 2011-09, Vol.99 (11), p.113514-113514-3

2011

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Polarization and charge-transfer effect on the transport properties in two-dimensional electron gases/LaNiO3 heterostructure

Applied physics letters, 2018-01, Vol.112 (2)

2018

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Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors

Applied physics letters, 2011-01, Vol.98 (1), p.012114-012114-3

2011

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Unusual photon tunneling in the presence of a layer with a negative refractive index

Applied physics letters, 2002-02, Vol.80 (6), p.1097-1099

2002

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Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

Applied physics letters, 2024-04, Vol.124 (17)

2024

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Probing the pathway of an ultrafast structural phase transition to illuminate the transition mechanism in Cu2S

Applied physics letters, 2018-07, Vol.113 (4)

2018

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The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Applied physics letters, 2021-05, Vol.118 (22)

2021

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Nonpolar m-plane thin film GaN and InGaN∕GaN light-emitting diodes on LiAlO2(100) substrates

Applied physics letters, 2007-12, Vol.91 (25)

2007

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Effects of point defects on thermal and thermoelectric properties of InN

Applied physics letters, 2011-01, Vol.98 (1), p.012108-012108-3

2011

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Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy

Applied physics letters, 2004-12, Vol.85 (23), p.5718-5720

2004

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Deformation mechanisms of irradiated metallic nanofoams

Applied physics letters, 2013-07, Vol.103 (3)

2013

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Publisher's Note: “Probing the pathway of an ultrafast structural phase transition to illuminate the transition mechanism in Cu2S” [Appl. Phys. Lett. 113, 041904 (2018)]

Applied physics letters, 2018-08, Vol.113 (7)

2018

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Tetragonal-tetragonal-monoclinic-rhombohedral transition: Strain relaxation of heavily compressed BiFeO3 epitaxial thin films

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Life signal detection using an on-chip split-ring based solid state microwave sensor

Applied physics letters, 2014-09, Vol.105 (13)

2014

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Exchange interaction mediated ferroelectricity in multiferroic MnTiO3 with anisotropic orbital hybridization and hole delocalization

Applied physics letters, 2014-02, Vol.104 (8)

2014

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Low-temperature migration enhanced epitaxy of base material for AlGaAs/GaAs heterojunction bipolar transistors

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Dislocation core structures in Si-doped GaN

Surface effects on the radiation response of nanoporous Au foams

Coherent thermal emission from one-dimensional photonic crystals

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

Magnetic phase transitions in Ta/CoFeB/MgO multilayers

Radiation induced effects on mechanical properties of nanoporous gold foams

ZnO film thickness effect on surface acoustic wave modes and acoustic streaming

Investigation of Pt/Pb(Zr0.2Ti0.8)O3/Ti-Al-O/Si heterostructure as metal/ferroelectric/insulator/semiconductor

Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells

Polarization and charge-transfer effect on the transport properties in two-dimensional electron gases/LaNiO3 heterostructure

Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors

Unusual photon tunneling in the presence of a layer with a negative refractive index

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

Probing the pathway of an ultrafast structural phase transition to illuminate the transition mechanism in Cu2S

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Nonpolar m-plane thin film GaN and InGaN∕GaN light-emitting diodes on LiAlO2(100) substrates

Effects of point defects on thermal and thermoelectric properties of InN

Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy

Deformation mechanisms of irradiated metallic nanofoams

Publisher's Note: “Probing the pathway of an ultrafast structural phase transition to illuminate the transition mechanism in Cu2S” [Appl. Phys. Lett. 113, 041904 (2018)]

Tetragonal-tetragonal-monoclinic-rhombohedral transition: Strain relaxation of heavily compressed BiFeO3 epitaxial thin films

Life signal detection using an on-chip split-ring based solid state microwave sensor

Exchange interaction mediated ferroelectricity in multiferroic MnTiO3 with anisotropic orbital hybridization and hole delocalization

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