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Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Advanced functional materials, 2019-08, Vol.29 (32), p.n/a

2019

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454-n/a

2022

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Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced functional materials, 2017-04, Vol.27 (13), p.n/a

2017

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Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

Advanced materials interfaces, 2017-05, Vol.4 (10), p.n/a

2017

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Large‐Scale Transparent Molybdenum Disulfide Plasmonic Photodetector Using Split Bull Eye Structure

Advanced optical materials, 2018-10, Vol.6 (20), p.n/a

2018

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The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1252-1258

2016

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454

2022

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.n/a

2022

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Integrated Photonic Structure Enhanced Infrared Photodetectors

Advanced photonics research, 2021-09, Vol.2 (9), p.n/a

2021

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GaN MOSFET with a gate SiO2 insulator deposited by silane-based plasma-enhanced chemical vapor deposition

Physica status solidi. C, 2011-02, Vol.8 (2), p.457-460

2011

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High-sensitivity UV phototransistor with GaN/AlGaN/GaN gate epi-structure

Physica status solidi. A, Applications and materials science, 2007-06, Vol.204 (6), p.2117-2120

2007

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A monolithic Cockcroft-Walton voltage multiplier based on AlGaN/GaN HFET structure

Physica status solidi. C, 2007-06, Vol.4 (7), p.2654-2657

2007

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Photoanodes: Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)

Advanced materials interfaces, 2017-05, Vol.4 (10), p.n/a

2017

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Monolithic Blue LED Series Arrays for High-Voltage AC Operation

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.376-379

2002

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Thermal stability investigation of copper-gate AlGaN/GaN high electron mobility transistors

Physica status solidi. C, 2003-12 (7), p.2376-2379

2003

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21)

2022

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Improvement of BiVO 4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO 3 Perovskite as a Co‐Catalyst

Advanced functional materials, 2019-08, Vol.29 (32)

2019

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Monolayer W sub(x)Mo sub(1-x)S sub(2) Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced functional materials, 2017-04, Vol.27 (13), p.np-np

2017

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Monolayer W x Mo 1− x S 2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced functional materials, 2017-04, Vol.27 (13)

2017

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Photoanodes: Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO 4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)

Advanced materials interfaces, 2017-05, Vol.4 (10)

2017

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Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO 4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

Advanced materials interfaces, 2017-05, Vol.4 (10)

2017

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GaN MOSFET with a gate SiO 2 insulator deposited by silane‐based plasma‐enhanced chemical vapor deposition

Physica status solidi. C, 2011-02, Vol.8 (2), p.457-460

2011

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Deferiprone protects the isolated atria from cardiotoxicity induced by doxorubicin

Acta pharmacologica Sinica, 2006-10, Vol.27 (10), p.1333-1339

2006

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Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

Large‐Scale Transparent Molybdenum Disulfide Plasmonic Photodetector Using Split Bull Eye Structure

The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Integrated Photonic Structure Enhanced Infrared Photodetectors

GaN MOSFET with a gate SiO2 insulator deposited by silane-based plasma-enhanced chemical vapor deposition

High-sensitivity UV phototransistor with GaN/AlGaN/GaN gate epi-structure

A monolithic Cockcroft-Walton voltage multiplier based on AlGaN/GaN HFET structure

Photoanodes: Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)

Monolithic Blue LED Series Arrays for High-Voltage AC Operation

Thermal stability investigation of copper-gate AlGaN/GaN high electron mobility transistors

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Improvement of BiVO 4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO 3 Perovskite as a Co‐Catalyst

Monolayer W sub(x)Mo sub(1-x)S sub(2) Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Monolayer W x Mo 1− x S 2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Photoanodes: Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO 4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)

Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO 4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

GaN MOSFET with a gate SiO 2 insulator deposited by silane‐based plasma‐enhanced chemical vapor deposition

Deferiprone protects the isolated atria from cardiotoxicity induced by doxorubicin

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