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Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Journal of materials science. Materials in electronics, 2017-10, Vol.28 (19), p.14341-14347

2017

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Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Applied physics. A, Materials science & processing, 2014-09, Vol.116 (4), p.1561-1566

2014

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Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

Journal of materials science. Materials in electronics, 2013-12, Vol.24 (12), p.5122-5126

2013

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Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2923-2927

2013

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Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2716-2720

2013

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Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

Journal of materials science. Materials in electronics, 2013-09, Vol.24 (9), p.3299-3302

2013

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Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides

Journal of electronic materials, 2012-12, Vol.41 (12), p.3453-3456

2012

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Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2750-2754

2013

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Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

Journal of materials science. Materials in electronics, 2012, Vol.23 (2), p.542-545

2012

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Study on the optical properties of β-Ga2O3 films grown by MOCVD

Journal of materials science. Materials in electronics, 2017-08, Vol.28 (15), p.10997-11001

2017

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The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

Journal of materials science. Materials in electronics, 2015-05, Vol.26 (5), p.3231-3235

2015

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The Inorganic-organic Hybrid Junction with n-ZnO Nanorods/p-polyfluorene Structure Grown with Low temperature Aqueous Chemical Growth Method

Journal of Wuhan University of Technology. Materials science edition, 2012-04, Vol.27 (2), p.296-300

2012

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Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer

Journal of materials science. Materials in electronics, 2018-06, Vol.29 (11), p.9321-9325

2018

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Study on the optical properties of [beta]-Ga2O3 films grown by MOCVD

Journal of materials science. Materials in electronics, 2017-08, Vol.28 (15), p.10997

2017

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Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNx interlayer

Journal of materials science. Materials in electronics, 2016-10, Vol.27 (10), p.10003-10009

2016

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Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices

Journal of materials science. Materials in electronics, 2019-02, Vol.30 (4), p.3277-3282

2019

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Influence of substrate temperature on the optical properties of Sb-doped ZnO films prepared by MOCVD

Journal of materials science. Materials in electronics, 2017-02, Vol.28 (3), p.2602-2606

2017

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Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED

Applied physics. B, Lasers and optics, 2012-12, Vol.109 (4), p.605-609

2012

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Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD

Journal of materials science. Materials in electronics, 2015-03, Vol.26 (3), p.1591-1596

2015

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Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

Journal of materials science. Materials in electronics, 2017-02, Vol.28 (3), p.2598-2601

2017

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Effect of annealing conditions on the structural, electrical and optical properties of Li-doped NiO thin films

Journal of materials science. Materials in electronics, 2016-06, Vol.27 (6), p.6408-6412

2016

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Synthesis of GaN network by nitridation of hexagonal epsilon -Ga sub(2)O sub(3) film

Journal of materials science. Materials in electronics, 2017-02, Vol.28 (3), p.2598-2601

2017

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Synthesis of GaN network by nitridation of hexagonal [epsilon]-Ga^sub 2^O3 film

Journal of materials science. Materials in electronics, 2017-02, Vol.28 (3), p.2598

2017

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Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film homojunction light-emitting diode

Journal of materials science. Materials in electronics, 2014-04, Vol.25 (4), p.1955-1958

2014

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Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiN sub(x) interlayer

Journal of materials science. Materials in electronics, 2016-10, Vol.27 (10), p.10003-10009

2016

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Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides

Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

Study on the optical properties of β-Ga2O3 films grown by MOCVD

The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

The Inorganic-organic Hybrid Junction with n-ZnO Nanorods/p-polyfluorene Structure Grown with Low temperature Aqueous Chemical Growth Method

Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer

Study on the optical properties of [beta]-Ga2O3 films grown by MOCVD

Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNx interlayer

Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices

Influence of substrate temperature on the optical properties of Sb-doped ZnO films prepared by MOCVD

Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED

Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD

Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

Effect of annealing conditions on the structural, electrical and optical properties of Li-doped NiO thin films

Synthesis of GaN network by nitridation of hexagonal epsilon -Ga sub(2)O sub(3) film

Synthesis of GaN network by nitridation of hexagonal [epsilon]-Ga^sub 2^O3 film

Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film homojunction light-emitting diode

Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiN sub(x) interlayer

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