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Wafer Mapping Using Deuterium Enhanced Defect Characterization

Journal of electronic materials, 2010-07, Vol.39 (7), p.930-935

2010

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Genetic characterisation of blastocysts and the identification of an instance of multiple parternity in the stoat (Mustela erminea)

Conservation genetics, 2005-09, Vol.6 (5), p.855-858

2005

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Compositional and Strain Characterization of Ion-Beam-Synthesized GexSi1−x Thin Films

Journal of electronic materials, 2010, Vol.39 (2), p.174-177

2010

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HgCdTe on Si: Present status and novel buffer layer concepts

Journal of electronic materials, 2003-08, Vol.32 (8), p.882-889

2003

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Al, B, and Ga ion-implantation doping of SiC

Journal of electronic materials, 2000-11, Vol.29 (11), p.1340-1345

2000

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Implantation of Si under extreme conditions : the effects of high temperature and dose on damage accumulation

Journal of electronic materials, 1996, Vol.25 (1), p.99-106

1996

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A comparison of graphite and AlN caps used for annealing ion-implanted SiC

Journal of electronic materials, 2002-06, Vol.31 (6), p.568-575

2002

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Methods of defect-engineering shallow junctions formed by B+-implantation in Si

Journal of electronic materials, 1997-11, Vol.26 (11), p.1349-1354

1997

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Donor ion-implantation doping into SiC

Journal of electronic materials, 1999-03, Vol.28 (3), p.334-340

1999

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A Method to Improve Activation of Implanted Dopants in SiC

MRS proceedings, 2000, Vol.650, Article R5.3

2000

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Al, Al/C and Al/Si implantations in 6H-SiC

Journal of electronic materials, 1996, Vol.25 (1), p.75-80

1996

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Ion implantation doping of OMCVD grown GaN

Journal of electronic materials, 1997-03, Vol.26 (3), p.334-339

1997

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Rapid thermal annealing of ion implanted 6H-SiC by microwave processing

Journal of electronic materials, 1997-03, Vol.26 (3), p.144-150

1997

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Optimization of the Ion-Cut Process in Si and SiC

MRS proceedings, 2000, Vol.647, Article O6.1

2000

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Compositional and Strain Characterization of Ion-Beam-Synthesized Ge^sub x^Si^sub 1-x^ Thin Films

Journal of electronic materials, 2010-02, Vol.39 (2), p.174

2010

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Compositional and Strain Characterization of Ion-Beam-Synthesized Ge x Si1−x Thin Films

Journal of electronic materials, 2010-02, Vol.39 (2), p.174-177

2010

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Drug-induced hypokalaemia. A cause for concern

Drugs & aging, 1992-01, Vol.2 (1), p.35-41

1992

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Potassium loss, ventricular irritability, and the risk of sudden death in hypertensive patients

Drugs (New York, N.Y.), 1986, Vol.31 Suppl 4 (Supplement 4), p.78-84

Holland, O B

1986

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Solving matching problems with linear programming

Mathematical programming, 1985-12, Vol.33 (3), p.243-259

1985

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Diuretic-induced hypokalaemia and ventricular arrhythmias

Drugs (New York, N.Y.), 1984-10, Vol.28 Suppl 1 (Supplement 1), p.86-92

Holland, O B

1984

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Rutherford backscattering studies on high-energy Si-implanted InP

Journal of electronic materials, 1991-10, Vol.20 (8), p.615-619

1991

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Elevated temperature nitrogen implants in 6H-SiC

Journal of electronic materials, 1996-05, Vol.25 (5), p.885-892

1996

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Oxidation of Si implanted with nondopant, metallic ions

Journal of materials research, 1988-10, Vol.3 (5), p.898-906

1988

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The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide

MRS proceedings, 1999, Vol.572, Article 33

1999

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A Unique Method of Forming GexSi1-x Thin-Films on Insulator

MRS proceedings, 2007, Vol.1036, Article 1036-M04-17

2007

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Wafer Mapping Using Deuterium Enhanced Defect Characterization

Genetic characterisation of blastocysts and the identification of an instance of multiple parternity in the stoat (Mustela erminea)

Compositional and Strain Characterization of Ion-Beam-Synthesized GexSi1−x Thin Films

HgCdTe on Si: Present status and novel buffer layer concepts

Al, B, and Ga ion-implantation doping of SiC

Implantation of Si under extreme conditions : the effects of high temperature and dose on damage accumulation

A comparison of graphite and AlN caps used for annealing ion-implanted SiC

Methods of defect-engineering shallow junctions formed by B+-implantation in Si

Donor ion-implantation doping into SiC

A Method to Improve Activation of Implanted Dopants in SiC

Al, Al/C and Al/Si implantations in 6H-SiC

Ion implantation doping of OMCVD grown GaN

Rapid thermal annealing of ion implanted 6H-SiC by microwave processing

Optimization of the Ion-Cut Process in Si and SiC

Compositional and Strain Characterization of Ion-Beam-Synthesized Ge^sub x^Si^sub 1-x^ Thin Films

Compositional and Strain Characterization of Ion-Beam-Synthesized Ge x Si1−x Thin Films

Drug-induced hypokalaemia. A cause for concern

Potassium loss, ventricular irritability, and the risk of sudden death in hypertensive patients

Solving matching problems with linear programming

Diuretic-induced hypokalaemia and ventricular arrhythmias

Rutherford backscattering studies on high-energy Si-implanted InP

Elevated temperature nitrogen implants in 6H-SiC

Oxidation of Si implanted with nondopant, metallic ions

The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide

A Unique Method of Forming GexSi1-x Thin-Films on Insulator

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