UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

Technical physics letters, 2020-08, Vol.46 (8), p.741-744

2020

Volltextzugriff (PDF)

HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316

2020

Volltextzugriff (PDF)

A Megapixel Matrix Photodetector of the Middle Infrared Range

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1011-1015

2019

Volltextzugriff (PDF)

HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316-320

2020

Volltextzugriff (PDF)

Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1024-1029

2019

Volltextzugriff (PDF)

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1626-1629

2016

Volltextzugriff (PDF)

Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.456-469

2020

Volltextzugriff (PDF)

Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al$_{\mathbf{2}}$$O$_{\mathbf{3}}$$ Grown by Atomic Layer Deposition

Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.492-497

2020

Volltextzugriff (PDF)

Monte Carlo Simulation of Charge Carrier Diffusion for Determining the Spatial Resolution of Infrared Cadmium—Mercury—Tellurium Detectors

Optoelectronics, instrumentation, and data processing, 2019-09, Vol.55 (5), p.519-524

2019

Volltextzugriff (PDF)

Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and AlO Grown by Atomic Layer Deposition

Optoelectronics, instrumentation, and data processing, 2020, Vol.56 (5), p.492-497

2020

Volltextzugriff (PDF)

Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates

Physics of the solid state, 2015-11, Vol.57 (11), p.2151-2158

2015

Volltextzugriff (PDF)

Spontaneous composition modulation during CdxHg1−xTe(301) molecular beam epitaxy

JETP letters, 2011-10, Vol.94 (4)

2011

Volltextzugriff (PDF)

HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3), p.385-391

2011

Volltextzugriff (PDF)

Defects in the crystal structure of CdxHg1 − xTe layers grown on the Si (310) substrates

Semiconductors (Woodbury, N.Y.), 2011-07, Vol.45 (7), p.926-934

2011

Volltextzugriff (PDF)

Spontaneous composition modulation during Cd x Hg1−x Te(301) molecular beam epitaxy

JETP letters, 2011-10, Vol.94 (4), p.324-328

2011

Volltextzugriff (PDF)

Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector

Semiconductors (Woodbury, N.Y.), 2012-04, Vol.46 (4), p.535-540

2012

Volltextzugriff (PDF)

Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates

Semiconductors (Woodbury, N.Y.), 2011-07, Vol.45 (7)

2011

Volltextzugriff (PDF)

Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates

Semiconductors (Woodbury, N.Y.), 2011-07, Vol.45 (7), p.926-934

2011

Volltextzugriff (PDF)

High-performance 320 × 256 long-wavelength infrared photodetector arrays based on CdHgTe layers grown by molecular beam epitaxy

Optoelectronics, instrumentation, and data processing, 2013, Vol.49 (5), p.485-491

2013

Volltextzugriff (PDF)

320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter

Opto-electronics review, 2010, Vol.18 (3), p.236-240

2010

Volltextzugriff (PDF)

Linear HgCdTe IR FPA 288×4 with bidirectional scanning

Opto-electronics review, 2010, Vol.18 (3), p.332-337

2010

Volltextzugriff (PDF)

Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure

Technical physics letters, 2011-02, Vol.37 (2), p.148-150

2011

Volltextzugriff (PDF)

Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

Semiconductors (Woodbury, N.Y.), 2001-09, Vol.35 (9), p.1045-1053

2001

Volltextzugriff (PDF)

Factors determining the morphology of CdxHg1−xTe films in the course of molecular beam epitaxy

Surface investigation, x-ray, synchrotron and neutron techniques, 2008, Vol.2 (1), p.120-126

2008

Volltextzugriff (PDF)

HgCdTe heterostructures on Si(310) substrates for infrared photodetectors

Optoelectronics, instrumentation, and data processing, 2009-08, Vol.45 (4), p.301-307

2009

Volltextzugriff (PDF)

1 – 25 von 32

Suche als RSS-Feed

Aktive Filter

KollektionSpringer Online Journals Complete

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(32)
Mit Volltextzugriff
(28)

Publikationsform

Artikel
(32)

Sprache

Englisch
(32)

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Springer Journals
(32)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(28)
IngentaConnect
(12)
EZB Electronic Journals Library
(3)
De Gruyter journals
(2)
IngentaConnect Journals
(2)

1 weiteren anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

A Megapixel Matrix Photodetector of the Middle Infrared Range

HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al$_{\mathbf{2}}$$O$_{\mathbf{3}}$$ Grown by Atomic Layer Deposition

Monte Carlo Simulation of Charge Carrier Diffusion for Determining the Spatial Resolution of Infrared Cadmium—Mercury—Tellurium Detectors

Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and AlO Grown by Atomic Layer Deposition

Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates

Spontaneous composition modulation during CdxHg1−xTe(301) molecular beam epitaxy

HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays

Defects in the crystal structure of CdxHg1 − xTe layers grown on the Si (310) substrates

Spontaneous composition modulation during Cd x Hg1−x Te(301) molecular beam epitaxy

Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector

Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates

Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates

High-performance 320 × 256 long-wavelength infrared photodetector arrays based on CdHgTe layers grown by molecular beam epitaxy

320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter

Linear HgCdTe IR FPA 288×4 with bidirectional scanning

Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure

Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

Factors determining the morphology of CdxHg1−xTe films in the course of molecular beam epitaxy

HgCdTe heterostructures on Si(310) substrates for infrared photodetectors

Aktive Filter

Suchergebnisse filtern