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Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide

Journal of applied physics, 2008-04, Vol.103 (8)

2008

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Global model analysis of negative ion generation in low-pressure inductively coupled hydrogen plasmas with bi-Maxwellian electron energy distributions

Physics of plasmas, 2015-03, Vol.22 (3)

2015

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Investigation of collision effects on ion dynamics in the presheath and sheath of weakly collisional and magnetized hydrogen plasmas

Physics of plasmas, 2024-06, Vol.31 (6)

2024

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Effects of thermal nitrided gate-oxide thickness on 4H silicon-carbide-based metal-oxide-semiconductor characteristics

Applied physics letters, 2007-01, Vol.90 (1)

2007

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Revolutionizing biomedical research: The imperative need for heart–kidney-connected organoids

APL bioengineering, 2024-03, Vol.8 (1), p.010902-010902

2024

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Ohmic contact formation mechanism of Ni on n-type 4H–SiC

Applied physics letters, 2001-09, Vol.79 (12), p.1816-1818

2001

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The effect of localized surface plasmon on the photocurrent of silicon nanocrystal photodetectors

Applied physics letters, 2009-05, Vol.94 (18), p.183108-183108-3

2009

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Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals

Applied physics letters, 2009-12, Vol.95 (24), p.243108-243108-3

2009

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Astrophysical S-factor for destructive reactions of lithium-7 in big bang nucleosynthesis

AIP Conference Proceedings, 2014, Vol.1594 (1), p.22

2014

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Current conduction mechanisms in post-nitridation rapid-thermal-annealed gate oxides on 4H silicon carbide

Applied physics letters, 2005-11, Vol.87 (21), p.212102-212102-3

2005

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Electrical and optical characteristics of silicon nanocrystal solar cells

Applied physics letters, 2009-10, Vol.95 (14), p.143120-143120-3

2009

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Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

Applied physics letters, 2002-11, Vol.81 (22), p.4192-4194

2002

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Size-dependent photocurrent of photodetectors with silicon nanocrystals

Applied physics letters, 2009-05, Vol.94 (18), p.183106-183106-3

2009

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Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC

Applied physics letters, 2010-03, Vol.96 (12)

2010

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The role of the defect levels in MgO in the low firing voltage, wide driving voltage margin operation of an alternate current plasma display panel

Journal of applied physics, 2007-06, Vol.101 (12)

2007

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Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy

Applied physics letters, 2010-05, Vol.96 (22), p.223110-223110-3

2010

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Improved local oxidation of silicon carbide using atomic force microscopy

Applied physics letters, 2010-02, Vol.96 (8), p.082105-082105-3

2010

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Internal strain identification of seed-layered ZrO2, aluminum-, and yttrium-doped ZrO2 thin films via grazing incidence x-ray diffraction

Journal of applied physics, 2024-07, Vol.136 (1)

2024

Volltextzugriff (PDF)

Modeling and fabrication of thin film thermopile sensor

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-05, Vol.27 (3), p.1466-1472

2009

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Vacuum ultraviolet emission characteristics from He–Ne–Xe gas discharge in an alternating current plasma display panel cell

Journal of applied physics, 2000-08, Vol.88 (3), p.1257-1262

2000

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Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide

Applied physics letters, 2007-04, Vol.90 (16)

2007

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Radio-frequency characteristics of graphene oxide

Applied physics letters, 2010-11, Vol.97 (19), p.193103-193103-3

2010

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A practical perspective on the implementation of hyperdynamics for accelerated simulation

The Journal of chemical physics, 2014-01, Vol.140 (4), p.044107-044107

2014

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Erratum: "Polycrystalline silicon produced by Ni-silicide mediated crystallization of amorphous silicon in an electric field" [ J. Appl. Phys. 88 , 3099 ( 2000 ) ]

Journal of applied physics, 2007-05, Vol.101 (10), p.109901-109901-1

2007

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Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi2 films

Journal of applied physics, 2000-03, Vol.87 (6), p.2760-2764

2000

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Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide

Global model analysis of negative ion generation in low-pressure inductively coupled hydrogen plasmas with bi-Maxwellian electron energy distributions

Investigation of collision effects on ion dynamics in the presheath and sheath of weakly collisional and magnetized hydrogen plasmas

Effects of thermal nitrided gate-oxide thickness on 4H silicon-carbide-based metal-oxide-semiconductor characteristics

Revolutionizing biomedical research: The imperative need for heart–kidney-connected organoids

Ohmic contact formation mechanism of Ni on n-type 4H–SiC

The effect of localized surface plasmon on the photocurrent of silicon nanocrystal photodetectors

Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals

Astrophysical S-factor for destructive reactions of lithium-7 in big bang nucleosynthesis

Current conduction mechanisms in post-nitridation rapid-thermal-annealed gate oxides on 4H silicon carbide

Electrical and optical characteristics of silicon nanocrystal solar cells

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

Size-dependent photocurrent of photodetectors with silicon nanocrystals

Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC

The role of the defect levels in MgO in the low firing voltage, wide driving voltage margin operation of an alternate current plasma display panel

Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy

Improved local oxidation of silicon carbide using atomic force microscopy

Internal strain identification of seed-layered ZrO2, aluminum-, and yttrium-doped ZrO2 thin films via grazing incidence x-ray diffraction

Modeling and fabrication of thin film thermopile sensor

Vacuum ultraviolet emission characteristics from He–Ne–Xe gas discharge in an alternating current plasma display panel cell

Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide

Radio-frequency characteristics of graphene oxide

A practical perspective on the implementation of hyperdynamics for accelerated simulation

Erratum: "Polycrystalline silicon produced by Ni-silicide mediated crystallization of amorphous silicon in an electric field" [ J. Appl. Phys. 88 , 3099 ( 2000 ) ]

Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi2 films

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