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Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBD18

2021

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Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.31006

2024

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Turn-off switching voltage surge analysis with dependence on IGBT cell design

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

Japanese Journal of Applied Physics, 2023-07, Vol.62 (7), p.71002

2023

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Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBD07

2019

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Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor

Japanese Journal of Applied Physics, 2020-11, Vol.59 (11), p.115503

2020

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Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGD18

2020

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A design direction of low-voltage field-plate power MOSFETs for figure-of-merit (FOM) limit

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBD16

2021

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Study on stress in trench structures during silicon IGBTs process-oxidation

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.3

2024

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Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Japanese Journal of Applied Physics, 2019-06, Vol.58 (6), p.61006

2019

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Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts

Japanese Journal of Applied Physics, 2011-03, Vol.50 (3), p.035603-035603-5

Mercier, Frédéric

2011

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Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC0801

2022

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Evaluation of thermally activated defects behaviors in nitrogen-doped Czochralski silicon single crystals using deep level transient spectroscopy

Japanese Journal of Applied Physics, 2023-07, Vol.62 (7), p.75504

2023

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Temperature-Independent Two-Dimensional Hole Gas Confined at GaN/AlGaN Heterointerface

Applied physics express, 2013-09, Vol.6 (9), p.91002

2013

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Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts

Japanese Journal of Applied Physics, 2011-03, Vol.50 (3R), p.35603

2011

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Activation of p-Type Dopants in 4H–SiC Using Hybrid Super-Rapid Thermal Annealing Equipment

Japanese Journal of Applied Physics, 2007-08, Vol.46 (8R), p.5342

2007

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Fabrication of 1.4-kV mesa-type p+–n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Applied physics letters, 2003-07, Vol.83 (2), p.377-379

2003

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5-Aza-2-deoxycytidine Enhances the Sensitivity of 5-Fluorouracil by Demethylation of the Thymidine Phosphorylase Promoter

Anticancer research, 2019-08, Vol.39 (8), p.4129-4136

2019

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Polystyrene–Polyhedral Oligomeric Silsesquioxane Core–Shell Element-block Polymer Particles Fabricated via Heterocoagulation Method

Chemistry letters, 2016, Vol.45 (10), p.1168-1170

2016

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Expression of ABCB6 is related to resistance to 5-FU, SN-38 and vincristine

Anticancer research, 2014-09, Vol.34 (9), p.4767-4773

2014

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A patient with anti-aquaporin 4 antibody who presented with recurrent hypersomnia, reduced orexin (hypocretin) level, and symmetrical hypothalamic lesions

Sleep medicine, 2009-02, Vol.10 (2), p.253-255

2009

Volltextzugriff (PDF)

Involvement of a small GTP-binding protein (G protein) regulator, small G protein GDP dissociation stimulator, in antiapoptotic cell survival signaling

Molecular biology of the cell, 2000-05, Vol.11 (5), p.1875-1886

2000

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Airway obstruction by a transesophageal echocardiography probe in an adult patient with a dissecting aneurysm of the ascending aorta and arch

Journal of cardiothoracic and vascular anesthesia, 2000-04, Vol.14 (2), p.186-187

2000

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Glucose consumption in recurrent gliomas

Neurosurgery, 1993-07, Vol.33 (1), p.28-33

1993

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Intrasellar neuronal choristoma associated with growth hormone-producing pituitary adenoma containing amyloid deposits

Human pathology, 1995-08, Vol.26 (8), p.925-928

1995

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Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test

Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal

Turn-off switching voltage surge analysis with dependence on IGBT cell design

Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor

Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs

A design direction of low-voltage field-plate power MOSFETs for figure-of-merit (FOM) limit

Study on stress in trench structures during silicon IGBTs process-oxidation

Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts

Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

Evaluation of thermally activated defects behaviors in nitrogen-doped Czochralski silicon single crystals using deep level transient spectroscopy

Temperature-Independent Two-Dimensional Hole Gas Confined at GaN/AlGaN Heterointerface

Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts

Activation of p-Type Dopants in 4H–SiC Using Hybrid Super-Rapid Thermal Annealing Equipment

Fabrication of 1.4-kV mesa-type p+–n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

5-Aza-2-deoxycytidine Enhances the Sensitivity of 5-Fluorouracil by Demethylation of the Thymidine Phosphorylase Promoter

Polystyrene–Polyhedral Oligomeric Silsesquioxane Core–Shell Element-block Polymer Particles Fabricated via Heterocoagulation Method

Expression of ABCB6 is related to resistance to 5-FU, SN-38 and vincristine

A patient with anti-aquaporin 4 antibody who presented with recurrent hypersomnia, reduced orexin (hypocretin) level, and symmetrical hypothalamic lesions

Involvement of a small GTP-binding protein (G protein) regulator, small G protein GDP dissociation stimulator, in antiapoptotic cell survival signaling

Airway obstruction by a transesophageal echocardiography probe in an adult patient with a dissecting aneurysm of the ascending aorta and arch

Glucose consumption in recurrent gliomas

Intrasellar neuronal choristoma associated with growth hormone-producing pituitary adenoma containing amyloid deposits

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