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A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Symmetry (Basel), 2022-08, Vol.14 (8), p.1721

2022

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p-Type NiZnO thin films grown by photo-assist metal–organic chemical vapor deposition

Journal of alloys and compounds, 2013-12, Vol.579, p.160-164

2013

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Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

Applied surface science, 2014-03, Vol.295, p.26-30

2014

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Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

Journal of luminescence, 2014-10, Vol.154, p.587-592

2014

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Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Nanomaterials (Basel, Switzerland), 2018-09, Vol.8 (9), p.744

2018

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Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy

Applied surface science, 2013-01, Vol.265, p.176-179

2013

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Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Scientific reports, 2014-09, Vol.4 (1), p.6322-6322, Article 6322

2014

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Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes

Journal of luminescence, 2013-03, Vol.135, p.160-163

2013

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Photoelectron spectroscopy study of the interactions between ErF3 dopants and Alq3 hosts for near-infrared organic light-emitting diodes

Applied surface science, 2014-08, Vol.309, p.22-26

2014

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Realization of wide size range 1D ZnO micro/nano rods for versatile micro/nano devices by controlled seed layer thickness

Applied surface science, 2013-07, Vol.276, p.782-786

2013

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Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

Journal of materials science. Materials in electronics, 2013-12, Vol.24 (12), p.5122-5126

2013

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Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films

Materials science in semiconductor processing, 2013-10, Vol.16 (5), p.1303-1307

2013

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A series of asymmetrical phthalocyanines: synthesis and near infrared properties

Molecules (Basel, Switzerland), 2013-04, Vol.18 (4), p.4628-4639

2013

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Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2923-2927

2013

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Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film

Journal of luminescence, 2014-05, Vol.149, p.313-316

2014

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High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

Journal of crystal growth, 2013-03, Vol.366, p.35-38

2013

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Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2716-2720

2013

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The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate

Physica. E, Low-dimensional systems & nanostructures, 2014-11, Vol.64, p.57-62

2014

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Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

Journal of materials science. Materials in electronics, 2013-09, Vol.24 (9), p.3299-3302

2013

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Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides

Journal of electronic materials, 2012-12, Vol.41 (12), p.3453-3456

2012

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Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2750-2754

2013

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Probing into the effect of Auger recombination mechanism on zero bias resistance―area product in In1―xGaxAs detector

Solid state communications, 2011-12, Vol.151 (24), p.1953-1957

2011

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The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

Applied surface science, 2009-04, Vol.255 (12), p.6313-6317

2009

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Turning a linear waterborne polyurethane into a crosslinked counterpart with improved water resistance and mechanical strength through a fast post metal-organic crosslinking

Soft materials, 2022-10, Vol.20 (4), p.471-478

2022

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Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

Coatings (Basel), 2022-05, Vol.12 (5), p.645

2022

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A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

p-Type NiZnO thin films grown by photo-assist metal–organic chemical vapor deposition

Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes

Photoelectron spectroscopy study of the interactions between ErF3 dopants and Alq3 hosts for near-infrared organic light-emitting diodes

Realization of wide size range 1D ZnO micro/nano rods for versatile micro/nano devices by controlled seed layer thickness

Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films

A series of asymmetrical phthalocyanines: synthesis and near infrared properties

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film

High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate

Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides

Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Probing into the effect of Auger recombination mechanism on zero bias resistance―area product in In1―xGaxAs detector

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

Turning a linear waterborne polyurethane into a crosslinked counterpart with improved water resistance and mechanical strength through a fast post metal-organic crosslinking

Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

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