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The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1691-1695

2016

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Luminescent properties of MBE-grown Si:Er/SOI structures

Journal of luminescence, 2012-12, Vol.132 (12), p.3148-3150

2012

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Specific features of the nonradiative relaxation of [Er.sup.3+] ions in epitaxial Si structures

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1586

2014

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Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.109-112

2015

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Spectral-kinetic properties of heterostructures with GaAsSb/InGaGs/GaGs-based quantum wells emitting in the range of 1.0-1.2 µm

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1504

2013

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Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1372-1375

2012

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Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range

Semiconductors (Woodbury, N.Y.), 2014-11, Vol.48 (11), p.1463-1466

2014

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Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix

Technical physics, 2012-12, Vol.57 (12), p.1672-1675

2012

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Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1407-1410

2012

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Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1376-1380

2012

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Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4601-4603

2009

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Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

Semiconductors (Woodbury, N.Y.), 2012-07, Vol.46 (7), p.917-920

2012

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The features of electro-optical memory effect for 1.54μm electroluminescence of an Er doped Si diode

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4597-4600

2009

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Diagnostics of quantum cascade structures by optical methods in the near infrared region

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1411-1414

2012

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Er-Doped Electro-Optical Memory Element for 1.5- \mu m Silicon Photonics

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1539-1544

2006

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Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1472-1475

2010

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Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-12, Vol.105 (1), p.70-73

2003

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Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.769-772

2003

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Electrically active centers in light emitting Si : Er/Si structures grown by the sublimation MBE method

Physica. B, Condensed matter, 2001-12, Vol.308, p.361-364

2001

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Xvi Symposium “nanophysics And Nanoelectronics”
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The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells

Luminescent properties of MBE-grown Si:Er/SOI structures

Specific features of the nonradiative relaxation of [Er.sup.3+] ions in epitaxial Si structures

Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

Spectral-kinetic properties of heterostructures with GaAsSb/InGaGs/GaGs-based quantum wells emitting in the range of 1.0-1.2 µm

Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation

Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range

Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix

Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping

Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods

Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

The features of electro-optical memory effect for 1.54μm electroluminescence of an Er doped Si diode

Diagnostics of quantum cascade structures by optical methods in the near infrared region

Er-Doped Electro-Optical Memory Element for 1.5- \mu m Silicon Photonics

Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures

Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

Electrically active centers in light emitting Si : Er/Si structures grown by the sublimation MBE method

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