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Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

Journal of luminescence, 2017-06, Vol.186, p.243-246

2017

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A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Symmetry (Basel), 2022-08, Vol.14 (8), p.1721

2022

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Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Journal of alloys and compounds, 2018-01, Vol.731, p.243-247

2018

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UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Journal of luminescence, 2017-07, Vol.187, p.428-432

2017

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Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

Optics communications, 2015-02, Vol.336, p.1-4

2015

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A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Materials science in semiconductor processing, 2015-11, Vol.39, p.582-586

2015

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Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Applied surface science, 2016-01, Vol.360, p.772-776

2016

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Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

Applied surface science, 2014-03, Vol.295, p.26-30

2014

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p-Type NiZnO thin films grown by photo-assist metal–organic chemical vapor deposition

Journal of alloys and compounds, 2013-12, Vol.579, p.160-164

2013

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High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1423-1429

2012

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Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Applied physics. A, Materials science & processing, 2014-09, Vol.116 (4), p.1561-1566

2014

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Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

Journal of luminescence, 2014-10, Vol.154, p.587-592

2014

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Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Nanomaterials (Basel, Switzerland), 2018-09, Vol.8 (9), p.744

2018

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Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties

Applied surface science, 2007-03, Vol.253 (11), p.5161-5165

2007

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Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy

Applied surface science, 2013-01, Vol.265, p.176-179

2013

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Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Scientific reports, 2014-09, Vol.4 (1), p.6322-6322, Article 6322

2014

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Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer

Applied surface science, 2011-03, Vol.257 (10), p.4685-4688

2011

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Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes

Journal of luminescence, 2013-03, Vol.135, p.160-163

2013

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Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal–organic chemical vapor deposition

Journal of luminescence, 2009, Vol.129 (1), p.86-89

2009

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Photoelectron spectroscopy study of the interactions between ErF3 dopants and Alq3 hosts for near-infrared organic light-emitting diodes

Applied surface science, 2014-08, Vol.309, p.22-26

2014

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Realization of wide size range 1D ZnO micro/nano rods for versatile micro/nano devices by controlled seed layer thickness

Applied surface science, 2013-07, Vol.276, p.782-786

2013

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Oxygen-induced physical property variation of deposited ZnO films by metal–organic chemical vapor deposition

Applied surface science, 2012-09, Vol.258 (22), p.8673-8677

2012

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Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films

Materials science in semiconductor processing, 2013-10, Vol.16 (5), p.1303-1307

2013

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Influence of radical power on the electrical and optical properties of ZnO:N films grown by metal-organic chemical vapor deposition with N2O plasma doping source

Thin solid films, 2012-10, Vol.521, p.253-256

2012

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A series of asymmetrical phthalocyanines: synthesis and near infrared properties

Molecules (Basel, Switzerland), 2013-04, Vol.18 (4), p.4628-4639

2013

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Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

p-Type NiZnO thin films grown by photo-assist metal–organic chemical vapor deposition

High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties

Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer

Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes

Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal–organic chemical vapor deposition

Photoelectron spectroscopy study of the interactions between ErF3 dopants and Alq3 hosts for near-infrared organic light-emitting diodes

Realization of wide size range 1D ZnO micro/nano rods for versatile micro/nano devices by controlled seed layer thickness

Oxygen-induced physical property variation of deposited ZnO films by metal–organic chemical vapor deposition

Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films

Influence of radical power on the electrical and optical properties of ZnO:N films grown by metal-organic chemical vapor deposition with N2O plasma doping source

A series of asymmetrical phthalocyanines: synthesis and near infrared properties

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