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Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD

Journal of alloys and compounds, 2010-02, Vol.491 (1-2), p.45-48

2010

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Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

Journal of alloys and compounds, 2010-09, Vol.506 (1), p.10-13

2010

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Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part I: Analysis of BAs thermodynamic properties

Journal of crystal growth, 2006-05, Vol.290 (2), p.410-418

2006

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Clustering effects in optical properties of BGaAs/GaAs epilayers

Journal of luminescence, 2009-09, Vol.129 (9), p.1010-1014

2009

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AES, LEED and PYS investigation of Au deposits on InSe/Si(1 1 1) substrate

Applied surface science, 2010-03, Vol.256 (10), p.3007-3009

2010

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Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-06, Vol.130 (1), p.66-72

2006

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Theoretical electronic investigation of the low-lying electronic states of the LuF molecule

Canadian journal of physics, 2009-11, Vol.87 (11), p.1163-1169

2009

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Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part II: BGaAs alloy formation

Journal of crystal growth, 2006-05, Vol.290 (2), p.419-425

2006

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Investigation by EELS and TRIM simulation method of the interaction of Ar + and N + ions with the InP compound

Applied surface science, 2009-10, Vol.256 (1), p.21-26

2009

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Study by EELS and EPES of the stability of InPO4/InP system

Applied surface science, 2008-09, Vol.254 (22), p.7394-7400

2008

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AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar + ions bombardment

Applied surface science, 2008-04, Vol.254 (13), p.4024-4028

2008

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Growth and characterization of high quality BxGa1-xAs/GaAs(0 0 1) epilayers

Journal of crystal growth, 2003-02, Vol.248, p.463-467

2003

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Low-temperature homoepitaxial growth of α-SiC on on-axis (0 0 0 1) substrate by vapor–liquid–solid mechanism

Journal of crystal growth, 2006-08, Vol.293 (2), p.433-437

2006

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Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures

Optical materials, 2003-10, Vol.24 (1), p.303-308

2003

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Study of surface defects on 3C–SiC films grown on Si(1 1 1) by CVD

Journal of crystal growth, 2003-06, Vol.253 (1), p.95-101

2003

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Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts

Diamond and related materials, 2007, Vol.16 (1), p.37-45

2007

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Vapour–liquid–solid mechanism for the growth of SiC homoepitaxial layers by VPE

Journal of crystal growth, 2002, Vol.234 (1), p.63-69

2002

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Structural phase transition, elastic properties and electronic properties of chalcopyrite CuAlX2 (X=S, Se, Te)

Journal of alloys and compounds, 2009-11, Vol.487 (1-2), p.206-213

2009

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Energy barrier for the growth transition step-flow/step-bunching during epitaxy of InP/InP

Applied surface science, 2000-07, Vol.161 (1), p.286-290

2000

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Optical signature of atomic ordering in In0.53Ga0.47As/InP: photoluminescence properties and IR response

Optical materials, 2003-10, Vol.24 (1-2), p.309-314

2003

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Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-07, Vol.84 (3), p.258-264

2001

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Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine

Thin solid films, 2004-06, Vol.458 (1-2), p.154-160

2004

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N-enrichment at the GaAs1-xNx/GaAs(0 0 1) interface: microstructure and optical properties

Journal of crystal growth, 2003-02, Vol.248, p.441-445

2003

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The effect of heating on InGaAs/InP(1 0 0) and InPO4/InP(1 0 0)

Journal of electron spectroscopy and related phenomena, 2004-01, Vol.134 (1), p.81-85

2004

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Optical study of direct interface in InP/InAlAs/InP double heterostructures grown by MOCVD

Physica. E, Low-dimensional systems & nanostructures, 2003-04, Vol.17, p.229-231

2003

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Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD

Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part I: Analysis of BAs thermodynamic properties

Clustering effects in optical properties of BGaAs/GaAs epilayers

AES, LEED and PYS investigation of Au deposits on InSe/Si(1 1 1) substrate

Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition

Theoretical electronic investigation of the low-lying electronic states of the LuF molecule

Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part II: BGaAs alloy formation

Investigation by EELS and TRIM simulation method of the interaction of Ar + and N + ions with the InP compound

Study by EELS and EPES of the stability of InPO4/InP system

AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar + ions bombardment

Growth and characterization of high quality BxGa1-xAs/GaAs(0 0 1) epilayers

Low-temperature homoepitaxial growth of α-SiC on on-axis (0 0 0 1) substrate by vapor–liquid–solid mechanism

Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures

Study of surface defects on 3C–SiC films grown on Si(1 1 1) by CVD

Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts

Vapour–liquid–solid mechanism for the growth of SiC homoepitaxial layers by VPE

Structural phase transition, elastic properties and electronic properties of chalcopyrite CuAlX2 (X=S, Se, Te)

Energy barrier for the growth transition step-flow/step-bunching during epitaxy of InP/InP

Optical signature of atomic ordering in In0.53Ga0.47As/InP: photoluminescence properties and IR response

Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE

Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine

N-enrichment at the GaAs1-xNx/GaAs(0 0 1) interface: microstructure and optical properties

The effect of heating on InGaAs/InP(1 0 0) and InPO4/InP(1 0 0)

Optical study of direct interface in InP/InAlAs/InP double heterostructures grown by MOCVD

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