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Green photoluminescence efficiency and free-carrier density in ZnO phosphor powders prepared by spray pyrolysis

Journal of luminescence, 1997-07, Vol.75 (1), p.11-16

1997

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Nature of the Si and N dangling bonds in silicon nitride

Journal of non-crystalline solids, 1995-07, Vol.187, p.297-300

1995

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H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures

Journal of non-crystalline solids, 1997-08, Vol.216, p.116-123

1997

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Photo-assisted switching and trapping in BaTiO3 and Pb(Zr,Ti)O3 ferroelectrics

Journal of non-crystalline solids, 1995-07, Vol.187, p.448-452

1995

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Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p- n junction diodes

Solid-state electronics, 1991-08, Vol.34 (8), p.835-841

1991

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Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films

Journal of non-crystalline solids, 1991, Vol.137, p.291-294

1991

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Antibodies to Myelin Basic Protein in Children with Autistic Behavior

Brain, behavior, and immunity, 1993-03, Vol.7 (1), p.97-103

1993

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Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.1789-1798

1997

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HLA-B27 binding of peptide from its own sequence and similar peptides from bacteria: implications for spondyloarthropathies

The Lancet (British edition), 1995-06, Vol.345 (8964), p.1542-1544

1995

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1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.1810-1817

1997

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Border traps: Issues for MOS radiation response and long-term reliability

Microelectronics Reliability, 1995-03, Vol.35 (3), p.403-428

1995

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Effects of interface traps and border traps on MOS postirradiation annealing response

IEEE transactions on nuclear science, 1995-12, Vol.42 (6), p.1698-1707

1995

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Photo-assisted switching and trapping in BaTiO 3 and Pb(Zr, Ti)O 3 ferroelectrics

Journal of non-crystalline solids, 1995, Vol.187, p.448-452

1995

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DR-positive T cells in autism: association with decreased plasma levels of the complement C4B protein

Neuropsychobiology, 1995-01, Vol.31 (2), p.53-57

1995

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Microscopic nature of border traps in MOS oxides

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.1817-1827

1994

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Increased Frequency of the Extended or Ancestral Haplotype B44-SC3O-DR4 in Autism

Neuropsychobiology, 1995, Vol.32 (3), p.120-123

1995

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SHORTER NOTICES

The English historical review, 1994, Vol.CIX (430), p.144-145

WARREN, W.L.

1994

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H + and D + associated charge buildup during annealing of Si/SiO 2/Si structures

Journal of non-crystalline solids, 1997, Vol.216, p.116-123

1997

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A study of proton generation in Si/SiO 2/Si structures

Microelectronic engineering, 1999, Vol.48 (1), p.167-170

1999

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Paramagnetic defect centers in BESOI and SIMOX buried oxides

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1993-12, Vol.40 (6), p.1755-1764

1993

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A non-volatile MOSFET memory device based on mobile protons in SiO 2 thin films

Journal of non-crystalline solids, 1999, Vol.254 (1), p.1-10

1999

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A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films

Journal of non-crystalline solids, 1999-09, Vol.254 (1-3), p.1-10

1999

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Reactions and diffusion during annealing-induced H + generation in SOI buried oxides

Microelectronic engineering, 1999-09, Vol.48 (1), p.363-366

1999

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Radiation-induced H + trapping in buried SiO 2

Microelectronic engineering, 1997, Vol.36 (1), p.241-244

1997

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Electron and hole trapping in doped oxides

IEEE transactions on nuclear science, 1995-12, Vol.42 (6), p.1731-1739

1995

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Green photoluminescence efficiency and free-carrier density in ZnO phosphor powders prepared by spray pyrolysis

Nature of the Si and N dangling bonds in silicon nitride

H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures

Photo-assisted switching and trapping in BaTiO3 and Pb(Zr,Ti)O3 ferroelectrics

Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p- n junction diodes

Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films

Antibodies to Myelin Basic Protein in Children with Autistic Behavior

Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures

HLA-B27 binding of peptide from its own sequence and similar peptides from bacteria: implications for spondyloarthropathies

1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices

Border traps: Issues for MOS radiation response and long-term reliability

Effects of interface traps and border traps on MOS postirradiation annealing response

Photo-assisted switching and trapping in BaTiO 3 and Pb(Zr, Ti)O 3 ferroelectrics

DR-positive T cells in autism: association with decreased plasma levels of the complement C4B protein

Microscopic nature of border traps in MOS oxides

Increased Frequency of the Extended or Ancestral Haplotype B44-SC3O-DR4 in Autism

SHORTER NOTICES

H + and D + associated charge buildup during annealing of Si/SiO 2/Si structures

A study of proton generation in Si/SiO 2/Si structures

Paramagnetic defect centers in BESOI and SIMOX buried oxides

A non-volatile MOSFET memory device based on mobile protons in SiO 2 thin films

A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films

Reactions and diffusion during annealing-induced H + generation in SOI buried oxides

Radiation-induced H + trapping in buried SiO 2

Electron and hole trapping in doped oxides

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