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Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3

Nature materials, 2023-05, Vol.22 (5), p.591-598

2023

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Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4354-4362

2017

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High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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High-Density STT-Assisted SOT-MRAM (SAS-MRAM) for Energy-Efficient AI Applications

IEEE transactions on magnetics, 2024-10, p.1-1

2024

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Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line

IEEE electron device letters, 2024-10, Vol.45 (10), p.1800-1803

2024

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On-Device Continual Learning With STT-Assisted-SOT MRAM-Based In-Memory Computing

IEEE transactions on computer-aided design of integrated circuits and systems, 2024-08, Vol.43 (8), p.2393-2404

2024

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Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

Applied surface science, 2018-06, Vol.443, p.644-654

2018

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Energy Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

IEEE transactions on magnetics, 2023-03, Vol.59 (3), p.1-6

2023

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Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd 3

Nature materials, 2023-05, Vol.22 (5), p.591

2023

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Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2

IEEE electron device letters, 2005-07, Vol.26 (7), p.445-447

2005

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Electrical characteristics of 8-Å EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1657-1668

2006

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Demonstration of L \sim \hbox\ \hbox pMOSFETs With \hbox\hbox/\hbox Channels, High I/I\ (≫ \hbox \times \hbox^) , and Controlled Short Channel Effects (SCEs)

IEEE electron device letters, 2008-09, Vol.29 (9), p.1017-1020

2008

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Demonstration of Lg ∼ 55 nm pMOSFETs With Si/Si0.25Ge0.75/Si Channels, High Ion /Ioff (> 5 x 104), and Controlled Short Channel Effects (SCEs)

IEEE electron device letters, 2008, Vol.29 (9), p.1017-1020

2008

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Effect of electron cyclotron resonance H+, Ne+, Ar+, and Xe+ plasma precleaning on titanium silicide formation

IEEE transactions on electron devices, 1994-08, Vol.41 (8), p.1396-1404

1994

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Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)

High-Density STT-Assisted SOT-MRAM (SAS-MRAM) for Energy-Efficient AI Applications

Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line

On-Device Continual Learning With STT-Assisted-SOT MRAM-Based In-Memory Computing

Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

Energy Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd 3

Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2

Electrical characteristics of 8-Å EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

Demonstration of L \sim \hbox\ \hbox pMOSFETs With \hbox\hbox/\hbox Channels, High I/I\ (≫ \hbox \times \hbox^) , and Controlled Short Channel Effects (SCEs)

Demonstration of Lg ∼ 55 nm pMOSFETs With Si/Si0.25Ge0.75/Si Channels, High Ion /Ioff (> 5 x 104), and Controlled Short Channel Effects (SCEs)

Effect of electron cyclotron resonance H+, Ne+, Ar+, and Xe+ plasma precleaning on titanium silicide formation

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