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pMOSFET with 200% mobility enhancement induced by multiple stressors

IEEE electron device letters, 2006-06, Vol.27 (6), p.511-513

2006

Volltextzugriff (PDF)

Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1647-1656

2006

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Layout impact on the performance of a locally strained PMOSFET

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.22-23

2005

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Technological aspects of epitaxial CoSi2 layers for CMOS

Applied surface science, 1993-11, Vol.73, p.19-24

1993

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Manufacturable Processes for < 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1259-1264

2008

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A new method for measuring the saturation velocity of submicron CMOS transistors

Solid-state electronics, 1995-04, Vol.38 (4), p.791-793

1995

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Impact of silicidation on the excess noise behaviour of mos transistors

Solid-state electronics, 1995-11, Vol.38 (11), p.1893-1897

1995

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Dislocation formation in silicon implanted at different temperatures

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-11, Vol.15 (2), p.173-186

1992

Volltextzugriff (PDF)

Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

Thin solid films, 1994-10, Vol.251 (1), p.45-50

1994

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Two-step anneals to avoid bridging during Co silicidation

Applied surface science, 1993-01, Vol.73, p.162-166

1993

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Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Thin solid films, 1994-03, Vol.240 (1), p.110-113

1994

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Manufacturable Processes for \leq 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1259-1264

2008

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On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/ p−Si contacts

Solid State Electronics, 1993-05, Vol.36 (5), p.753-759

1993

Volltextzugriff (PDF)

Nondestructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Thin solid films, 1994-03, Vol.240 (1-2), p.110-113

1994

Volltextzugriff (PDF)

Avoiding dislocations in ion-implanted silicon

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.357-362

1992

Volltextzugriff (PDF)

Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability

2008 Symposium on VLSI Technology, 2008, p.186-187

2008

Volltextzugriff (PDF)

pMOSFET With 200%25 Mobility Enhancement Induced by Multiple Stressors

IEEE electron device letters, 2006-06, Vol.27 (6), p.511-513

2006

Volltextzugriff (PDF)

Structural and electrical characterization of Si(100) implanted with P + and Si + ions along the [100] channelling direction

Materials science & engineering. B, Solid-state materials for advanced technology, 1990-09, Vol.7 (1), p.149-165

1990

Volltextzugriff (PDF)

Thermal stability of CoSi2 on submicron polycrystalline silicon lines

Microelectronic engineering, 1992-09, Vol.19 (1-4), p.665-668

1992

Volltextzugriff (PDF)

Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

2007 IEEE International Electron Devices Meeting, 2007, p.955-958

2007

Volltextzugriff (PDF)

Channeling implantation of B and P in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.615-619

1991

Volltextzugriff (PDF)

Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1990-03, Vol.48 (1-4), p.448-452

1990

Volltextzugriff (PDF)

The role of extended defects on transient boron diffusion in ion-implanted silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-02, Vol.12 (4), p.307-325

1992

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Channeled implantation with a parallel scanned ion beam

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-02, Vol.37, p.357-360

1989

Volltextzugriff (PDF)

Deep implants by channeling implantation

Materials science & engineering. B, Solid-state materials for advanced technology, 1989-02, Vol.2 (1), p.139-143

1989

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pMOSFET with 200% mobility enhancement induced by multiple stressors

Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

Layout impact on the performance of a locally strained PMOSFET

Technological aspects of epitaxial CoSi2 layers for CMOS

Manufacturable Processes for < 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

A new method for measuring the saturation velocity of submicron CMOS transistors

Impact of silicidation on the excess noise behaviour of mos transistors

Dislocation formation in silicon implanted at different temperatures

Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

Two-step anneals to avoid bridging during Co silicidation

Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Manufacturable Processes for \leq 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/ p−Si contacts

Nondestructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Avoiding dislocations in ion-implanted silicon

Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability

pMOSFET With 200%25 Mobility Enhancement Induced by Multiple Stressors

Structural and electrical characterization of Si(100) implanted with P + and Si + ions along the [100] channelling direction

Thermal stability of CoSi2 on submicron polycrystalline silicon lines

Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Channeling implantation of B and P in silicon

Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

The role of extended defects on transient boron diffusion in ion-implanted silicon

Channeled implantation with a parallel scanned ion beam

Deep implants by channeling implantation

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