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Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Microelectronics and reliability, 2018-08, Vol.87, p.286-320

2018

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Adsorptive removal of fluoride using ionic liquid-functionalized chitosan – Equilibrium and mechanism studies

International journal of biological macromolecules, 2022-06, Vol.210, p.483-493

2022

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NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1662-1668

2019

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Superior NBTI in High- k SiGe Transistors–Part I: Experimental

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2092-2098

2017

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Superior NBTI in High-k SiGe Transistors-Part II: Theory

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2099-2105

2017

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Comphy — A compact-physics framework for unified modeling of BTI

Microelectronics and reliability, 2018-06, Vol.85, p.49-65

2018

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Novel amide derivatives of 1,3-dimethyl-2,6-dioxopurin-7-yl-alkylcarboxylic acids as multifunctional TRPA1 antagonists and PDE4/7 inhibitors: A new approach for the treatment of pain

European journal of medicinal chemistry, 2018-10, Vol.158, p.517-533

2018

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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Microelectronics and reliability, 2018-02, Vol.81, p.186-194

2018

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Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.20.5.1-20.5.4

2019

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Utilization of bog iron ores as sorbents of heavy metals

Journal of hazardous materials, 2009-03, Vol.162 (2), p.1007-1013

2009

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The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

Solid-state electronics, 2016-11, Vol.125, p.52-62

2016

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Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.20.1.1-20.1.4

2015

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On the microscopic structure of hole traps in pMOSFETs

2014 IEEE International Electron Devices Meeting, 2014, p.21.1.1-21.1.4

2014

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Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.30.7.1-30.7.4

2016

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BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.34.2.1-34.2.4

2018

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Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.7.5.1-7.5.4

2017

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On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI

IEEE transactions on device and materials reliability, 2019-06, Vol.19 (2), p.268-274

2019

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Six questions on topology in theoretical chemistry

Computational and theoretical chemistry, 2015-02, Vol.1053, p.2-16

2015

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Impact of single-defects on the variability of CMOS inverter circuits

Microelectronics and reliability, 2021-11, Vol.126, p.114275, Article 114275

2021

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MNDO study of transient species: the IR spectrum of benzyne

Journal of molecular structure, 1979, Vol.51, p.275-279

1979

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Trimethyl and diethylphenylphosphine complexes of rhenium(I, III, IV, V) and their reactions. X-ray crystal structures of a bis(η 5-cyclopentadienyl)-ethane-bridged dirhenium(I) complex obtained from phenylacetylene, tetrakis-(diethylphenylphosphine) (dinitrogen) hydridorhenium (I), tetrakis(trimethyl-phosphine) (η 2-dimethylphosphinomethyl) rhenium(I) and tetrakis(trimethylphosphine) (iodo)methyl rhenium(III) iodide-tetramethylphosphonium iodide

Polyhedron, 1982, Vol.1 (5), p.441-451

1982

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Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Adsorptive removal of fluoride using ionic liquid-functionalized chitosan – Equilibrium and mechanism studies

NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling

Superior NBTI in High- k SiGe Transistors–Part I: Experimental

Superior NBTI in High-k SiGe Transistors-Part II: Theory

Comphy — A compact-physics framework for unified modeling of BTI

Novel amide derivatives of 1,3-dimethyl-2,6-dioxopurin-7-yl-alkylcarboxylic acids as multifunctional TRPA1 antagonists and PDE4/7 inhibitors: A new approach for the treatment of pain

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs

Utilization of bog iron ores as sorbents of heavy metals

The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes

On the microscopic structure of hole traps in pMOSFETs

Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations

BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration

Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)

On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI

Six questions on topology in theoretical chemistry

Impact of single-defects on the variability of CMOS inverter circuits

MNDO study of transient species: the IR spectrum of benzyne

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