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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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A 0.13- \mu m CMOS 6 Gb/s/pin Memory Transceiver Using Pseudo-Differential Signaling for Removing Common-Mode Noise Due to SSN

IEEE journal of solid-state circuits, 2009-11, Vol.44 (11), p.3146-3162

2009

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A 0.18-μm CMOS front-end processor for a Blu-Ray Disc recorder with an adaptive PRML

IEEE journal of solid-state circuits, 2005, Vol.40 (1), p.342-350

2005

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A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)

First edition, 2004

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0531: Central Hypoechogenic Line on the Ultrasonographic Image of the Meniscus: Does It Represent a Meniscal Tear?

Ultrasound in medicine & biology, 2009, Vol.35 (8), p.S76-S76

2009

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1,1′-Oxalyldiimidazole chemiluminescent enzyme immunoassay capable of simultaneously sensing multiple markers

Biosensors & bioelectronics, 2012-02, Vol.32 (1), p.19-23

2012

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1,12-Substituted tetracyclines as antioxidant agents

Bioorganic & medicinal chemistry, 2005-08, Vol.13 (15), p.4627-4637

2005

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1.17 Feeling and Body Investigators (FBI): An Interoceptive Exposure Treatment Approach for Young Children With Avoidant/Restrictive Food Intake Disorder (ARFID)

Journal of the American Academy of Child and Adolescent Psychiatry, 2024-10, Vol.63 (10), p.S163-S163

2024

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1,2,3,4,6-Penta- O-galloyl-beta- d-glucose protects rat neuronal cells (Neuro 2A) from hydrogen peroxide-mediated cell death via the induction of heme oxygenase-1

Neuroscience letters, 2002-08, Vol.328 (2), p.185-189

2002

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1,2,4-Triazole-Fused Heterocycles; Part 1: Preparation of 5,10-Dihydro-[1,2,4]-triazolo[5,1-b]quinazolines

Synthesis (Stuttgart), 1994, Vol.1994 (10), p.1057-1062

1994

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1,2-bis(2-aminophenoxy)ethane- N,N,N′ N′-tetraacetic acid (BAPTA-AM) inhibits caffeine-induced apoptosis in human neuroblastoma cells

Neuroscience letters, 2004-04, Vol.358 (3), p.189-192

2004

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A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM

IEEE journal of solid-state circuits, 2003-11, Vol.38 (11), p.1943-1951

2003

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A 1.2-V 12-b 120-MS/s SHA-Free Dual-Channel Nyquist ADC Based on Midcode Calibration

IEEE transactions on circuits and systems. I, Regular papers, 2009-05, Vol.56 (5), p.894-901

2009

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A 1.2-V-only 900-mW 10 gb ethernet transceiver and XAUI interface with robust VCO tuning technique

IEEE journal of solid-state circuits, 2005-11, Vol.40 (11), p.2148-2158

2005

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1.25-Gb/s bidirectional transceiver module using 1.5%25-/spl Delta/ silica directional coupler-type WDM

IEEE photonics technology letters, 2005-11, Vol.17 (11), p.2442-2444

2005

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1.25-Gb/s bidirectional transceiver module using 1.5%- Delta silica directional coupler-type WDM

IEEE photonics technology letters, 2005-11, Vol.17 (11)

2005

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1.25-Gb/s bidirectional transceiver module using 1.5%-[Delta] silica directional coupler-type WDM

IEEE photonics technology letters, 2005-11, Vol.17 (11), p.2442

2005

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1.25-Gb/s bidirectional transceiver module using 1.5%-/spl Delta/ silica directional coupler-type WDM

IEEE photonics technology letters, 2005-11, Vol.17 (11), p.2442-2444

2005

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1,3,2-biphenyldioxaborepin (2,2'-biphenoxyborane) as a new hydroborating agent. Directive effects in the hydroboration of the alkenes and alkynes

Heterocycles, 1991-03, Vol.32 (3), p.425-430

1991

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1,3-Dipolar cycloaddition reactions of nitrile oxides with 2′,3′-didehydro-2′,3′-dideoxythymidine (d4T)

Bioorganic & medicinal chemistry letters, 1992, Vol.2 (4), p.323-324

1992

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A 1.4 Gb/s DLL using 2nd order charge-pump scheme with low phase/duty error for high-speed DRAM application

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.212-523 Vol.1

First edition, 2004

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A 1.4-pJ/b, power-scalable 16×12-Gb/s source-synchronous I/O with DFE receiver in 32nm SOI CMOS technology

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 2014, p.1-4

2014

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A 1.4 pJ/bit, Power-Scalable 16×12 Gb/s Source-Synchronous I/O With DFE Receiver in 32 nm SOI CMOS Technology

IEEE journal of solid-state circuits, 2015-08, Vol.50 (8), p.1917-1931

2015

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1.5 kA Bi-2223 HTS current leads for SMES magnets

IEEE transactions on applied superconductivity, 2001-03, Vol.11 (1), p.2547-2550

2001

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A 1.6Gb/s/pin double-data-rate SDRAM with wave-pipelined CAS latency control

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.210-523 Vol.1

2004

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 0.13- \mu m CMOS 6 Gb/s/pin Memory Transceiver Using Pseudo-Differential Signaling for Removing Common-Mode Noise Due to SSN

A 0.18-μm CMOS front-end processor for a Blu-Ray Disc recorder with an adaptive PRML

A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)

0531: Central Hypoechogenic Line on the Ultrasonographic Image of the Meniscus: Does It Represent a Meniscal Tear?

1,1′-Oxalyldiimidazole chemiluminescent enzyme immunoassay capable of simultaneously sensing multiple markers

1,12-Substituted tetracyclines as antioxidant agents

1.17 Feeling and Body Investigators (FBI): An Interoceptive Exposure Treatment Approach for Young Children With Avoidant/Restrictive Food Intake Disorder (ARFID)

1,2,3,4,6-Penta- O-galloyl-beta- d-glucose protects rat neuronal cells (Neuro 2A) from hydrogen peroxide-mediated cell death via the induction of heme oxygenase-1

1,2,4-Triazole-Fused Heterocycles; Part 1: Preparation of 5,10-Dihydro-[1,2,4]-triazolo[5,1-b]quinazolines

1,2-bis(2-aminophenoxy)ethane- N,N,N′ N′-tetraacetic acid (BAPTA-AM) inhibits caffeine-induced apoptosis in human neuroblastoma cells

A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM

A 1.2-V 12-b 120-MS/s SHA-Free Dual-Channel Nyquist ADC Based on Midcode Calibration

A 1.2-V-only 900-mW 10 gb ethernet transceiver and XAUI interface with robust VCO tuning technique

1.25-Gb/s bidirectional transceiver module using 1.5%25-/spl Delta/ silica directional coupler-type WDM

1.25-Gb/s bidirectional transceiver module using 1.5%- Delta silica directional coupler-type WDM

1.25-Gb/s bidirectional transceiver module using 1.5%-[Delta] silica directional coupler-type WDM

1.25-Gb/s bidirectional transceiver module using 1.5%-/spl Delta/ silica directional coupler-type WDM

1,3,2-biphenyldioxaborepin (2,2'-biphenoxyborane) as a new hydroborating agent. Directive effects in the hydroboration of the alkenes and alkynes

1,3-Dipolar cycloaddition reactions of nitrile oxides with 2′,3′-didehydro-2′,3′-dideoxythymidine (d4T)

A 1.4 Gb/s DLL using 2nd order charge-pump scheme with low phase/duty error for high-speed DRAM application

A 1.4-pJ/b, power-scalable 16×12-Gb/s source-synchronous I/O with DFE receiver in 32nm SOI CMOS technology

A 1.4 pJ/bit, Power-Scalable 16×12 Gb/s Source-Synchronous I/O With DFE Receiver in 32 nm SOI CMOS Technology

1.5 kA Bi-2223 HTS current leads for SMES magnets

A 1.6Gb/s/pin double-data-rate SDRAM with wave-pipelined CAS latency control

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