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Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate

Thin solid films, 2005-04, Vol.476 (2), p.252-257

2005

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Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films

Thin solid films, 2011-06, Vol.519 (16), p.5323-5328

2011

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Crystallization behavior caused by N doping in Ge1Sb4Te7 for PCRAM application

Thin solid films, 2010-09, Vol.518 (22), p.6422-6428

2010

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Process engineering to reduce self-aligned contact failure by reducing process-driven thermal stress on tungsten-dual poly gate stacks in sub-60 nm DRAM devices

Microelectronic engineering, 2012-11, Vol.99, p.33-37

2012

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Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

IEEE electron device letters, 2013-02, Vol.34 (2), p.244-246

2013

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Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

Solid-state electronics, 2011-09, Vol.63 (1), p.115-118

2011

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Alteration for a diffusion barrier design concept in future high-density dynamic and ferroelectric random access memory devices

Progress in materials science, 2003, Vol.48 (4), p.275-371

2003

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Vertical double gate Z-RAM technology with remarkable low voltage operation for DRAM application

2010 Symposium on VLSI Technology, 2010, p.163-164

2010

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Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

Ceramics international, 2008-05, Vol.34 (4), p.1043-1046

2008

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Investigation of RuTiN and RuTiO diffusion barrier suggested by a new design concept for future high-density memory capacitors

IEEE electron device letters, 2002-04, Vol.23 (4), p.176-178

2002

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Resynchronization of Modified JPEG Using a Power Allocation Scheme in a Direct Sequence CDMA System

ETRI journal, 2002-10, Vol.24 (5), p.405-408

2002

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Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor

IEEE electron device letters, 2000-08, Vol.21 (8), p.376-377

2000

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The effect of precleaning treatments on the formation of Ti silicide

Applied surface science, 1998-01, Vol.125 (1), p.23-28

1998

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Selective silicon growth on nitride for silicon-plugging process in LPCVD

Journal of crystal growth, 2003-07, Vol.254 (3), p.329-335

2003

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High performance of novel oxygen diffusion barrier materials for future high-density dynamic random access memory devices

IEEE transactions on electron devices, 2002-11, Vol.49 (11), p.1917-1927

2002

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Packet Error Probability of Multi-carrier CDMA System in Fast/Slow Correlated Fading Plus Interference Channel

EurAsia-ICT 2002: Information and Communication Technology, 2002, p.366-376

2002

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Performance Evaluation of Serial/Parallel Block Coded CDMA System with Complex Spreading in Near/Far Multiple-Access Interference and Multi-path Nakagami Fading Channel

EurAsia-ICT 2002: Information and Communication Technology, 2002, p.632-642

2002

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Transmission Time Analysis of WAP over CDMA System Using Turbo Code Scheme

EurAsia-ICT 2002: Information and Communication Technology, 2002, p.597-606

2002

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Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices

Critical reviews in solid state and materials sciences, 2002-01, Vol.27 (3-4), p.143-226

2002

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Performance Evaluation of Partially Coherent MC/DS-CDMA System with MOC Sequence

Lecture notes in computer science, 2003, p.417-425

2003

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Thermal stability of metal electrodes (Pt, Ru, & Ir) on polycrystalline silicon in ferroelectric capacitors

Integrated ferroelectrics, 1997-09, Vol.17 (1-4), p.489-500

1997

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Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors

Integrated ferroelectrics, 2005-01, Vol.70 (1), p.89-97

2005

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Integration of Novel Capacitor Structure for High Density FeRAM With Barrier Metal TiAlN and (Bi,La)4Ti3O12

Integrated ferroelectrics, 2004-01, Vol.66 (1), p.107-113

2004

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EFFECT OF NITROGEN INCORPORATION ON ELECTRICAL PROPERTIES OF HIGH-K NANOMIXED HfxAlyOz FILM CAPACITORS GROWN ON RU METAL ELECTRODES BY ATOMIC LAYER DEPOSITION

Integrated ferroelectrics, 2005-01, Vol.74 (1), p.131-136

2005

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Channel Capacity of MIMO Wideband CDMA System under the Imperfect Channel Estimation and Near/Far Effect

Lecture notes in computer science, 2003, p.407-416

2003

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Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate

Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films

Crystallization behavior caused by N doping in Ge1Sb4Te7 for PCRAM application

Process engineering to reduce self-aligned contact failure by reducing process-driven thermal stress on tungsten-dual poly gate stacks in sub-60 nm DRAM devices

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

Alteration for a diffusion barrier design concept in future high-density dynamic and ferroelectric random access memory devices

Vertical double gate Z-RAM technology with remarkable low voltage operation for DRAM application

Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

Investigation of RuTiN and RuTiO diffusion barrier suggested by a new design concept for future high-density memory capacitors

Resynchronization of Modified JPEG Using a Power Allocation Scheme in a Direct Sequence CDMA System

Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor

The effect of precleaning treatments on the formation of Ti silicide

Selective silicon growth on nitride for silicon-plugging process in LPCVD

High performance of novel oxygen diffusion barrier materials for future high-density dynamic random access memory devices

Packet Error Probability of Multi-carrier CDMA System in Fast/Slow Correlated Fading Plus Interference Channel

Performance Evaluation of Serial/Parallel Block Coded CDMA System with Complex Spreading in Near/Far Multiple-Access Interference and Multi-path Nakagami Fading Channel

Transmission Time Analysis of WAP over CDMA System Using Turbo Code Scheme

Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices

Performance Evaluation of Partially Coherent MC/DS-CDMA System with MOC Sequence

Thermal stability of metal electrodes (Pt, Ru, & Ir) on polycrystalline silicon in ferroelectric capacitors

Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors

Integration of Novel Capacitor Structure for High Density FeRAM With Barrier Metal TiAlN and (Bi,La)4Ti3O12

EFFECT OF NITROGEN INCORPORATION ON ELECTRICAL PROPERTIES OF HIGH-K NANOMIXED HfxAlyOz FILM CAPACITORS GROWN ON RU METAL ELECTRODES BY ATOMIC LAYER DEPOSITION

Channel Capacity of MIMO Wideband CDMA System under the Imperfect Channel Estimation and Near/Far Effect

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