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Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

Scientific reports, 2019-12, Vol.9 (1), p.20242-5, Article 20242

2019

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Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates

Journal of crystal growth, 2021-10, Vol.572, p.126269, Article 126269

2021

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Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels

Crystals (Basel), 2022-04, Vol.12 (4), p.499

2022

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High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

APL materials, 2016-08, Vol.4 (8), p.86103-086103-5

2016

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Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

PloS one, 2021-10, Vol.16 (10), p.e0258647-e0258647

2021

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Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

AIP advances, 2019-07, Vol.9 (7), p.075123-075123-5

2019

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Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

APL materials, 2017-07, Vol.5 (7), p.076107-076107-5

2017

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Fabrication of InGaN thin-film transistors using pulsed sputtering deposition

Scientific reports, 2016-07, Vol.6 (1), p.29500-29500, Article 29500

2016

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Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

APL materials, 2017-12, Vol.5 (12), p.126102-126102-6

2017

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AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

Scientific reports, 2019-04, Vol.9 (1), p.6254-6254, Article 6254

2019

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Effectiveness of a peer group-based online intervention program in empowering families of children with disabilities at home

Frontiers in pediatrics, 2022-10, Vol.10, p.929146-929146

2022

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N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

APL materials, 2017-02, Vol.5 (2), p.026102-026102-5

2017

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Growth of InN ultrathin films on AlN for the application to field-effect transistors

AIP advances, 2020-12, Vol.10 (12), p.125221-125221-4

2020

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Analysis of the Issues and Needs of Parents of Children With Developmental Disabilities in Japan Using Focus Group Interviews

The Journal of Nursing Research, 2016-03, Vol.24 (1), p.68-78

2016

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Family empowerment and associated factors in Japanese families raising a child with severe motor and intellectual disabilities

International journal of nursing sciences, 2018-10, Vol.5 (4), p.370-376

2018

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Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering

APL materials, 2018-11, Vol.6 (11), p.111103-111103-6

2018

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Family empowerment and quality of life of parents raising children with Developmental Disabilities in 78 Japanese families

International journal of nursing sciences, 2017-01, Vol.4 (1), p.38-45

2017

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Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates

Thin solid films, 2014-01, Vol.551, p.110-113

2014

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GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices

IEICE transactions on electronics, 2017-02, Vol.E100.C (2), p.161-165

2017

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Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers

Journal of crystal growth, 2009-02, Vol.311 (5), p.1311-1315

2009

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First-principles study of charge states effects of nitrogen vacancies on phonon properties in III-nitride semiconductors

Computational materials science, 2024-09, Vol.244, p.113264, Article 113264

2024

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An implantable, focal brain cooling device suppresses nociceptive pain in rats

Neuroscience research, 2010-04, Vol.66 (4), p.402-405

2010

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Structural properties of GaN grown on Zn-face ZnO at room temperature

Journal of crystal growth, 2007-07, Vol.305 (1), p.70-73

2007

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Sex Education Needs of Japanese People with Spina Bifida: Relation to Participants’ Demographics

Sexuality and disability, 2022-12, Vol.40 (4), p.807-818

2022

Volltextzugriff (PDF)

Impaired consciousness through a focal lesion under the left posteromedial cortex

Clinical neurophysiology, 2018-08, Vol.129 (8), p.1658-1659

2018

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Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates

Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

Effectiveness of a peer group-based online intervention program in empowering families of children with disabilities at home

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

Growth of InN ultrathin films on AlN for the application to field-effect transistors

Analysis of the Issues and Needs of Parents of Children With Developmental Disabilities in Japan Using Focus Group Interviews

Family empowerment and associated factors in Japanese families raising a child with severe motor and intellectual disabilities

Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering

Family empowerment and quality of life of parents raising children with Developmental Disabilities in 78 Japanese families

Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates

GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices

Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers

First-principles study of charge states effects of nitrogen vacancies on phonon properties in III-nitride semiconductors

An implantable, focal brain cooling device suppresses nociceptive pain in rats

Structural properties of GaN grown on Zn-face ZnO at room temperature

Sex Education Needs of Japanese People with Spina Bifida: Relation to Participants’ Demographics

Impaired consciousness through a focal lesion under the left posteromedial cortex

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