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Brief Review of Surface Passivation on III-V Semiconductor

Crystals (Basel), 2018-05, Vol.8 (5), p.226

2018

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Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Scientific reports, 2022-03, Vol.12 (1), p.5010-5010, Article 5010

2022

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Ultraviolet light induced degradation of luminescence in CsPbBr3 perovskite nanocrystals

Materials research bulletin, 2018-06, Vol.102, p.86-91

2018

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The hopping variable range conduction in amorphous InAs thin films

Current Applied Physics, 2018, 18(12), , pp.1492-1495

2018

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Passivation Effect on ZnO Films by SF6 Plasma Treatment

Crystals (Basel), 2019-05, Vol.9 (5), p.236

2019

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Mode-Locking Thulium-Doped Fiber Laser With 1.78-GHz Repetition Rate Based on Combination of Nonlinear Polarization Rotation and Semiconductor Saturable Absorber Mirror

IEEE photonics journal, 2017-06, Vol.9 (3), p.1-8

2017

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All-Solid-State DUV Light Source by Quadrupling of an Acousto-Optically Q-Switched Nd:YVO4 Laser

IEEE access, 2021, Vol.9, p.165989-165995

2021

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Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

IEEE access, 2021, Vol.9, p.16608-16614

2021

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Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation

Crystals (Basel), 2018-09, Vol.8 (9), p.339

2018

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InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering

Solid-state electronics, 2013-11, Vol.89, p.81-84

2013

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Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Solid-state electronics, 2013-01, Vol.79, p.281-284

2013

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Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier

Journal of lightwave technology, 2011-12, Vol.29 (24), p.3689-3692

2011

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Dynamic modulation transfer function analysis and short exposure technique for planar flow cytometric microimaging system

Optik (Stuttgart), 2019-02, Vol.178, p.210-215

2019

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GaInAs/GaAs quantum well intermixing based on SiO2–Cu composite film

Materials science in semiconductor processing, 2022-10, Vol.149, p.106877, Article 106877

2022

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High-efficiency and color-stable warm white organic light-emitting diodes utilizing energy transfer from interface exciplex

Organic electronics, 2018-11, Vol.62, p.524-529

2018

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The photoluminescence characteristics of GaAs surface by plasma treatment

Materials science in semiconductor processing, 2021-11, Vol.134, p.106050, Article 106050

2021

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Single emitter high power semiconductor laser module using vacuum sintering method

Optik (Stuttgart), 2020-04, Vol.207, p.164370, Article 164370

2020

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Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers

IEEE photonics technology letters, 2004-05, Vol.16 (5), p.1248-1249

2004

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Corrigendum to “Mode-locked Operation Characteristics of a Monolithic Integrated Two-section InGaAs/GaAs Double Quantum Wells Laser with Asymmetric Waveguide” [Optics & Laser Technol. 147 (2022) 107702, Pp. 1-8. https://doi.org/10.1016/j.optlastec.2021.107702]

Optics and laser technology, 2024-10, Vol.177, p.111080, Article 111080

2024

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High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm

IEEE photonics technology letters, 2004-02, Vol.16 (2), p.389-391

2004

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Mode-locked operation characteristics of a monolithic integrated two-section InGaAs/GaAs double quantum wells laser with asymmetric waveguide

Optics and laser technology, 2022-03, Vol.147, p.107702, Article 107702

2022

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MOVPE growth of Al-free 808 nm high power lasers using TBP and TBA in pure N2 ambient

Journal of crystal growth, 2006-02, Vol.288 (1), p.23-26

2006

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Lasing properties of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA in N2 ambient

Journal of crystal growth, 2004-08, Vol.268 (3-4), p.415-419

2004

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980 nm High Power Semiconductor Laser Stacked Arrays with Non-absorbing Window

Journal of materials science & technology, 2007, Vol.23 (1), p.36-38

Xin GAO Baoxue BO Yi QU Jing ZHANG Hui LI

2007

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All-Solid-State DUV Light Source by Quadrupling of an Acousto-Optically Q-Switched Nd:YVO 4 Laser

IEEE access, 2021, Vol.9, p.165989-165995

2021

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Brief Review of Surface Passivation on III-V Semiconductor

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Ultraviolet light induced degradation of luminescence in CsPbBr3 perovskite nanocrystals

The hopping variable range conduction in amorphous InAs thin films

Passivation Effect on ZnO Films by SF6 Plasma Treatment

Mode-Locking Thulium-Doped Fiber Laser With 1.78-GHz Repetition Rate Based on Combination of Nonlinear Polarization Rotation and Semiconductor Saturable Absorber Mirror

All-Solid-State DUV Light Source by Quadrupling of an Acousto-Optically Q-Switched Nd:YVO4 Laser

Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation

InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering

Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier

Dynamic modulation transfer function analysis and short exposure technique for planar flow cytometric microimaging system

GaInAs/GaAs quantum well intermixing based on SiO2–Cu composite film

High-efficiency and color-stable warm white organic light-emitting diodes utilizing energy transfer from interface exciplex

The photoluminescence characteristics of GaAs surface by plasma treatment

Single emitter high power semiconductor laser module using vacuum sintering method

Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers

Corrigendum to “Mode-locked Operation Characteristics of a Monolithic Integrated Two-section InGaAs/GaAs Double Quantum Wells Laser with Asymmetric Waveguide” [Optics & Laser Technol. 147 (2022) 107702, Pp. 1-8. https://doi.org/10.1016/j.optlastec.2021.107702]

High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm

Mode-locked operation characteristics of a monolithic integrated two-section InGaAs/GaAs double quantum wells laser with asymmetric waveguide

MOVPE growth of Al-free 808 nm high power lasers using TBP and TBA in pure N2 ambient

Lasing properties of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA in N2 ambient

980 nm High Power Semiconductor Laser Stacked Arrays with Non-absorbing Window

All-Solid-State DUV Light Source by Quadrupling of an Acousto-Optically Q-Switched Nd:YVO 4 Laser

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