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Scalable Resource Provisioning For Multi-tenant SaaS With Cloud Functions

2022 International Conference on Computing, Communication, Perception and Quantum Technology (CCPQT), 2022, p.181-187

2022

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Design and simulation of motor-driven micro gripper based on SLM micro vision

2017 IEEE International Conference on Information and Automation (ICIA), 2017, p.666-671

2017

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A Theoretical Flow Model of Thrust bearing in Gas spindle for wafer grinder

2020 21st International Conference on Electronic Packaging Technology (ICEPT), 2020, p.1-4

2020

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Optimized design of high precision heating stage for die attach equipment

2017 18th International Conference on Electronic Packaging Technology (ICEPT), 2017, p.1064-1068

2017

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Wake-Up Free Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer

IEEE transactions on electron devices, 2024-10, Vol.71 (10), p.6022-6026

2024

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Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C)

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.5150-5155

2024

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Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1561-1567

2022

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Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-6

2023

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Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfxZr1-xO2/Interlayer/Si (MFIS) Gate Structure

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5872-5878

2021

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A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4940-4944

2023

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DSRP: A Database for Stress Reduction Using Physiological Signals

IEEE access, 2024, Vol.12, p.135089-135102

2024

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Time efficient joint optimization federated learning over wireless communication networks

China communications, 2022-06, Vol.19 (6), p.169-178

2022

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Switching Dynamics of HfO2-ZrO2 Nanolaminates With Different Laminate Thicknesses

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3651-3658

2024

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Switching Dynamics of HfO 2 –ZrO 2 Nanolaminates With Different Laminate Thicknesses

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3651-3658

2024

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Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1845-1851

2024

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Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET During Endurance Fatigue by Gate Leakage Current

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1040

2024

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Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf 0.5 Zr 0.5 O 2

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1845-1851

2024

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Investigation of Trap Evolution of Hf 0.5 Zr 0.5 O 2 FeFET During Endurance Fatigue by Gate Leakage Current

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1040-1047

2024

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End to End AI Architecture for Next Generation Network

IEEE wireless communications, 2024-02, Vol.31 (1), p.86-92

2024

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In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5388-5392

2024

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Investigation of Trap Evolution of Hf } Zr } O } FeFET During Endurance Fatigue by Gate Leakage Current

IEEE transactions on electron devices, 2023-12, p.1-8

2023

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Spatial and Energetic Mapping of Traps in FeFET during Endurance Process by Advanced Trap Characterization Platform

IEEE electron device letters, 2024-09, p.1-1

2024

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Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4055-4061

2023

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A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4641-4646

2023

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Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.5081-5088

2024

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Scalable Resource Provisioning For Multi-tenant SaaS With Cloud Functions

Design and simulation of motor-driven micro gripper based on SLM micro vision

A Theoretical Flow Model of Thrust bearing in Gas spindle for wafer grinder

Optimized design of high precision heating stage for die attach equipment

Wake-Up Free Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer

Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C)

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfxZr1-xO2/Interlayer/Si (MFIS) Gate Structure

A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor

DSRP: A Database for Stress Reduction Using Physiological Signals

Time efficient joint optimization federated learning over wireless communication networks

Switching Dynamics of HfO2-ZrO2 Nanolaminates With Different Laminate Thicknesses

Switching Dynamics of HfO 2 –ZrO 2 Nanolaminates With Different Laminate Thicknesses

Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2

Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET During Endurance Fatigue by Gate Leakage Current

Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf 0.5 Zr 0.5 O 2

Investigation of Trap Evolution of Hf 0.5 Zr 0.5 O 2 FeFET During Endurance Fatigue by Gate Leakage Current

End to End AI Architecture for Next Generation Network

In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model

Investigation of Trap Evolution of Hf } Zr } O } FeFET During Endurance Fatigue by Gate Leakage Current

Spatial and Energetic Mapping of Traps in FeFET during Endurance Process by Advanced Trap Characterization Platform

Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure

A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure

Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors

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