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Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1745-1751

2024

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Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs-Part II: Atomistic and Electrical Modeling

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2490-2499

2011

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Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2483-2489

2011

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Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

IEEE transactions on circuits and systems. I, Regular papers, 2009-05, Vol.56 (5), p.920-932

2009

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Determination of Micro- and Nano-particle Properties by Multi-Frequency Bayesian Methods and Applications to Nanoelectrode Array Sensors

2019 IEEE SENSORS, 2019, p.1-4

2019

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Optical and radio calibration of the repealite based indoor positioning system

2012 International Conference on Indoor Positioning and Indoor Navigation (IPIN), 2012, p.1-8

2012

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New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications

2022 International Electron Devices Meeting (IEDM), 2022, p.30.5.1-30.5.4

2022

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Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks

IEEE transactions on electron devices, 2007-01, Vol.54 (1), p.106-114

2007

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3D-2D ultrasound feature-based registration for navigated prostate biopsy: A feasibility study

2016 38th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), 2016, Vol.2016, p.4109-4112

2016

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Probing Band Tail States in MOSFETs at Cryogenic Temperatures through Noise Spectroscopy

2023 International Conference on Noise and Fluctuations (ICNF), 2023, p.1-4

2023

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Device variability and correlation control by automated tuning of SPICE cards to PCM measurements

2011 IEEE ICMTS International Conference on Microelectronic Test Structures, 2011, p.147-152

2011

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A generic particle filtering approach for multiple polyhedral object tracking in a distributed active sensor network

2014 48th Asilomar Conference on Signals, Systems and Computers, 2014, p.943-947

2014

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First demonstration of strained SiGe nanowires TFETs with ION beyond 700µA/µm

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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Modeling temperature effects in the DC I-V characteristics of GaAs MESFET's

IEEE transactions on electron devices, 1993-02, Vol.40 (2), p.273-277

1993

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Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFET

2008 IEEE International Symposium on Circuits and Systems, 2008, p.2701-2704

2008

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Temperature dependence of gate and substrate currents in the CHE crossover regime

IEEE electron device letters, 1995-11, Vol.16 (11), p.506-508

1995

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A probabilistic underwater hyperbolic location system in low depth environment

OCEANS 2016 - Shanghai, 2016, p.1-4

2016

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Bias and temperature dependence of homogeneous hot-electron injection from silicon into silicon dioxide at low voltages

IEEE transactions on electron devices, 1997-02, Vol.44 (2), p.288-296

1997

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Acoustic echo path delay estimation by means of a BOC-BPSK correlation method

2015 IEEE SENSORS, 2015, p.1-4

2015

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Frequency-resolved measurements for the characterization of MOSFET parameters at low longitudinal field

IEEE transactions on electron devices, 1995-02, Vol.42 (2), p.315-320

1995

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Design of an X-band transformer-coupled amplifier with improved stability and layout

IEEE journal of solid-state circuits, 1993-06, Vol.28 (6), p.701-703, Article 701

1993

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Design of an < e1 > X < /e1 > -band transformer-coupled amplifier with improved stability and layout

IEEE journal of solid-state circuits, 1993-06, Vol.28 (6), p.701-703

1993

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Modeling temperature effects in the DC < e1 > I < /e1 > - < e1 > V < /e1 > characteristics of GaAs MESFET's

IEEE transactions on electron devices, 1993-02, Vol.40 (2), p.273-277

1993

Volltextzugriff (PDF)

Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFETs

IEEE transactions on electron devices, 1992-09, Vol.39 (9), p.2015-2020

1992

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On the sensitivity of spatio-temporal interest points to person identity

2012 IEEE Southwest Symposium on Image Analysis and Interpretation, 2012, p.69-72

2012

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Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs-Part II: Atomistic and Electrical Modeling

Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations

Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

Determination of Micro- and Nano-particle Properties by Multi-Frequency Bayesian Methods and Applications to Nanoelectrode Array Sensors

Optical and radio calibration of the repealite based indoor positioning system

New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications

Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks

3D-2D ultrasound feature-based registration for navigated prostate biopsy: A feasibility study

Probing Band Tail States in MOSFETs at Cryogenic Temperatures through Noise Spectroscopy

Device variability and correlation control by automated tuning of SPICE cards to PCM measurements

A generic particle filtering approach for multiple polyhedral object tracking in a distributed active sensor network

First demonstration of strained SiGe nanowires TFETs with ION beyond 700µA/µm

Modeling temperature effects in the DC I-V characteristics of GaAs MESFET's

Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFET

Temperature dependence of gate and substrate currents in the CHE crossover regime

A probabilistic underwater hyperbolic location system in low depth environment

Bias and temperature dependence of homogeneous hot-electron injection from silicon into silicon dioxide at low voltages

Acoustic echo path delay estimation by means of a BOC-BPSK correlation method

Frequency-resolved measurements for the characterization of MOSFET parameters at low longitudinal field

Design of an X-band transformer-coupled amplifier with improved stability and layout

Design of an < e1 > X < /e1 > -band transformer-coupled amplifier with improved stability and layout

Modeling temperature effects in the DC < e1 > I < /e1 > - < e1 > V < /e1 > characteristics of GaAs MESFET's

Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFETs

On the sensitivity of spatio-temporal interest points to person identity

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