UB Paderborn / Katalog / Suche / in CDI

Physical modeling of ferroelectric field-effect transistors in the negative capacitance regime

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.311-314

2016

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A 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.145-148

2016

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Advanced physical modeling of SiOx resistive random access memories

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.149-152

2016

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A simulation model for SiC power MOSFET based on surface potential

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.121-124

2016

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Semiconductor band alignment from first principles: A new nonequilibrium Green's function method applied to the CZTSe/CdS interface for photovoltaics

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.377-380

2016

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Phase-space solution of the subband Boltzmann transport equation for nano-scale TCAD

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.65-67

2016

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Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.213-216

2016

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Atomic Monte-Carlo simulation for CBRAM with various filament geometries

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.153-156

2016

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Theoretical study of electron transport in silicene and germanene using full-band Monte Carlo simulations

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.353-356

2016

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Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.303-306

2016

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Charge-collection modeling for SER simulation in FinFETs

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.295-298

2016

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Full band Monte Carlo simulation of impact ionization in wide bandgap semiconductors based on ab initio calculation

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.47-51

2016

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Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.117-120

2016

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A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.85-88

2016

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Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.57-60

2016

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Modeling electrostatic doping and series resistance in graphene-FETs

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.357-360

2016

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Atomistic simulation of nanodevices

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.281-286

2016

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Grain boundary resistance in nanoscale copper interconnections

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.105-108

2016

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One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.23-26

2016

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Metal-InGaAs contact resistance calculations from first principles

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.373-376

2016

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Automated vertical design co-optimization of a 1200V IGBT and diode

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.185-188

2016

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Full-band simulations of single-particle resonant tunneling in transition metal dichalcogenide-based interlayer tunneling field-effect transistors

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.89-92

2016

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Simulation of process variations in FinFET transistor patterning

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.299-302

2016

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Physical modelling of the SET/RESET characteristics and analog properties of TiOx/HfO2−x/TiOx-based RRAM devices

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.249-252

2016

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Performance evaluation of FinFETs: From multisubband BTE to DD calibration

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.109-115

2016

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Physical modeling of ferroelectric field-effect transistors in the negative capacitance regime

A 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides

Advanced physical modeling of SiOx resistive random access memories

A simulation model for SiC power MOSFET based on surface potential

Semiconductor band alignment from first principles: A new nonequilibrium Green's function method applied to the CZTSe/CdS interface for photovoltaics

Phase-space solution of the subband Boltzmann transport equation for nano-scale TCAD

Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study

Atomic Monte-Carlo simulation for CBRAM with various filament geometries

Theoretical study of electron transport in silicene and germanene using full-band Monte Carlo simulations

Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations

Charge-collection modeling for SER simulation in FinFETs

Full band Monte Carlo simulation of impact ionization in wide bandgap semiconductors based on ab initio calculation

Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics

A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact

Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment

Modeling electrostatic doping and series resistance in graphene-FETs

Atomistic simulation of nanodevices

Grain boundary resistance in nanoscale copper interconnections

One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors

Metal-InGaAs contact resistance calculations from first principles

Automated vertical design co-optimization of a 1200V IGBT and diode

Full-band simulations of single-particle resonant tunneling in transition metal dichalcogenide-based interlayer tunneling field-effect transistors

Simulation of process variations in FinFET transistor patterning

Physical modelling of the SET/RESET characteristics and analog properties of TiOx/HfO2−x/TiOx-based RRAM devices

Performance evaluation of FinFETs: From multisubband BTE to DD calibration

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