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Applying aspect oriented service control in IMS network

NOMS 2008 - 2008 IEEE Network Operations and Management Symposium, 2008, p.742-746

2008

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Speed sensorless control for wind turbine systems based on Hamiltonian model observer

Proceedings of the 30th Chinese Control Conference, 2011, p.584-588

2011

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A SiC-Based High Power Density Single-Phase Inverter With In-Series and In-Parallel Power Decoupling Method

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.893-901

2016

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A novel 4H-SiC pinched barrier rectifier

2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017, p.1950-1957

2017

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Silicon carbide pinched barrier rectifier (PBR)

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.167-170

2013

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Improving Surge Current Capability of SiC Merged PiN Schottky Diode by Adding Plasma Spreading Layers

IEEE transactions on power electronics, 2020-11, Vol.35 (11), p.11316-11320

2020

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Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1572-1579

2024

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Plasma Spreading Layers: An Effective Method for Improving Surge and Avalanche Robustness of SiC Devices

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5687-5694

2021

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Design of Interfacial Electrical Tree-Resistant Packaging Insulation Using Grafted Silicone Elastomer Nanocomposites for High-Temperature Power Modules

IEEE transactions on power electronics, 2024-05, Vol.39 (5), p.4933-4946

2024

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1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

IEEE electron device letters, 2024-08, Vol.45 (8), p.1492-1495

2024

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Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes with Enhanced Current Capability and Electroluminescence Phenomenon

IEEE electron device letters, 2024-09, Vol.45 (9), p.1-1

2024

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1.2-kV Planar SiC MOSFETs With Improved Short-Circuit Capability by Adding Plasma Spreading Layer

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4730-4736

2023

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Optimization of High-Density and High-Efficiency Switched-Tank Converter for Data Center Applications

IEEE transactions on industrial electronics (1982), 2020-02, Vol.67 (2), p.1626-1637

2020

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1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.1-6

2020

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Design of High-Temperature Packaging Insulation for Power Modules Using Grafted Nanostructured Silicone Elastomer Composites

IEEE transactions on dielectrics and electrical insulation, 2024-08, Vol.31 (4), p.1823-1831

2024

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Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases

IEEE journal of emerging and selected topics in power electronics, 2021-10, Vol.9 (5), p.6361-6369

2021

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Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current

IEEE electron device letters, 2022-01, Vol.43 (1), p.104-107

2022

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Modeling of the Influence on Effective \textit} From Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

IEEE transactions on electron devices, 2024-08, p.1-7

2024

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Characterization and Analysis on Performance and Avalanche Reliability of SiC MOSFETs With Varied JFET Region Width

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3982-3990

2021

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Deep Subject-Sensitive Hashing Network for High-Resolution Remote Sensing Image Integrity Authentication

IEEE geoscience and remote sensing letters, 2024, Vol.21, p.1-5

2024

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A Comparative Study of Switched-Tank Converter and Cascaded Voltage Divider for 48-V Data Center Application

IEEE journal of emerging and selected topics in power electronics, 2020-06, Vol.8 (2), p.1547-1559

2020

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The Impact of the Hexagonal and Circular Cell Designs on the Characteristics and Ruggedness for 4H-SiC MPS Diodes

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1226-1232

2022

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Monolithic Integration of SiC Lateral MOSFET With Lateral Schottky Diode for Power Converters

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.112-115

2024

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A Discrete Channel Model to Estimate Threshold Voltage Deviation Induced by The Voltage Stress in SiC Short Channel MOSFETs

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.120-123

2024

Volltextzugriff (PDF)

Methodology for Enhanced Surge Robustness of 1.2-kV SiC MOSFET Body Diode

IEEE journal of emerging and selected topics in power electronics, 2022-10, Vol.10 (5), p.5039-5047

2022

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Applying aspect oriented service control in IMS network

Speed sensorless control for wind turbine systems based on Hamiltonian model observer

A SiC-Based High Power Density Single-Phase Inverter With In-Series and In-Parallel Power Decoupling Method

A novel 4H-SiC pinched barrier rectifier

Silicon carbide pinched barrier rectifier (PBR)

Improving Surge Current Capability of SiC Merged PiN Schottky Diode by Adding Plasma Spreading Layers

Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

Plasma Spreading Layers: An Effective Method for Improving Surge and Avalanche Robustness of SiC Devices

Design of Interfacial Electrical Tree-Resistant Packaging Insulation Using Grafted Silicone Elastomer Nanocomposites for High-Temperature Power Modules

1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes with Enhanced Current Capability and Electroluminescence Phenomenon

1.2-kV Planar SiC MOSFETs With Improved Short-Circuit Capability by Adding Plasma Spreading Layer

Optimization of High-Density and High-Efficiency Switched-Tank Converter for Data Center Applications

1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability

Design of High-Temperature Packaging Insulation for Power Modules Using Grafted Nanostructured Silicone Elastomer Composites

Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases

Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current

Modeling of the Influence on Effective \textit} From Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Characterization and Analysis on Performance and Avalanche Reliability of SiC MOSFETs With Varied JFET Region Width

Deep Subject-Sensitive Hashing Network for High-Resolution Remote Sensing Image Integrity Authentication

A Comparative Study of Switched-Tank Converter and Cascaded Voltage Divider for 48-V Data Center Application

The Impact of the Hexagonal and Circular Cell Designs on the Characteristics and Ruggedness for 4H-SiC MPS Diodes

Monolithic Integration of SiC Lateral MOSFET With Lateral Schottky Diode for Power Converters

A Discrete Channel Model to Estimate Threshold Voltage Deviation Induced by The Voltage Stress in SiC Short Channel MOSFETs

Methodology for Enhanced Surge Robustness of 1.2-kV SiC MOSFET Body Diode

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