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InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

Electronics letters, 2008, Vol.44 (12), p.705-706, Article 705

2008

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InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications

Electronics letters, 2009-11, Vol.45 (24), p.1264-1266

2009

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InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications

Electronics letters, 2009-11, Vol.45 (24), p.1-1

2009

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InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

Electronics letters, 2008-06, Vol.44 (12), p.1-1

2008

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Fractal structures for low-resistance large area AlGaN/GaN power transistors

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.341-344

2012

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Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions

2011 IEEE International Integrated Reliability Workshop Final Report, 2011, p.42-46

2011

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Novel digital K-edge imaging system with transition radiation from an 855-MeV electron beam

IEEE transactions on nuclear science, 2001-06, Vol.48 (3), p.843-848

2001

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A flexible, module-based SoC-approach for low-power VoIP-applications

15th Annual IEEE International ASIC/SOC Conference, 2002, p.256-260

2002

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DIVA-Digital Interactive Venus Atlas

IGARSS '98. Sensing and Managing the Environment. 1998 IEEE International Geoscience and Remote Sensing. Symposium Proceedings. (Cat. No.98CH36174), 1998, Vol.1, p.390-392 vol.1

1998

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High power/high bandwidth GaN MMICs and hybrid amplifiers: design and characterization

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, 2005, p.373-376

2005

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Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, 2005, p.641-644

2005

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An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.385-386

2005

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Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth

2005 European Microwave Conference, 2005, Vol.3, p.4 pp.-1590

2005

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Experimental results with a novel superconductive in-vacuum mini-undulator test device at the Mainz Microtron MAMI

Proceedings of the 1999 Particle Accelerator Conference (Cat. No.99CH36366), 1999, Vol.1, p.165-167 vol.1

1999

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Novel digital K-edge imaging system with transition radiation from an 855 MeV electron beam

2000 IEEE Nuclear Science Symposium. Conference Record (Cat. No.00CH37149), 2000, Vol.3, p.23/43-23/48 vol.3

2000

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InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications

InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications

InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

Fractal structures for low-resistance large area AlGaN/GaN power transistors

Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions

Novel digital K-edge imaging system with transition radiation from an 855-MeV electron beam

A flexible, module-based SoC-approach for low-power VoIP-applications

DIVA-Digital Interactive Venus Atlas

High power/high bandwidth GaN MMICs and hybrid amplifiers: design and characterization

Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth

An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power

Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth

Experimental results with a novel superconductive in-vacuum mini-undulator test device at the Mainz Microtron MAMI

Novel digital K-edge imaging system with transition radiation from an 855 MeV electron beam

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