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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

IEEE electron device letters, 2008-04, Vol.29 (4), p.396-398

2008

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Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2796-2802

2007

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Evidence of reduced self-heating in strained Si MOSFETs

IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

2005

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

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Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1484-1486

1999

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Transconductance and mobility of Si:B delta MOSFETs

IEEE transactions on electron devices, 1993-01, Vol.40 (1), p.157-162

1993

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Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Indication of Non-equilibrium Transport in SiGe p-MOSFETs

30th European Solid-State Device Research Conference, 2000, p.224-227

2000

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Accurate effective mobility extraction in SOI MOS transistors

2009 10th International Conference on Ultimate Integration of Silicon, 2009, p.31-34

2009

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Channel backscattering characteristics of high performance germanium pMOSFETs

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.7-10

2008

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Silicon boron delta doped fet : growth and fabrication

Electronics letters, 1992, Vol.28 (7), p.667-669

1992

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A systematic investigation of N-channel delta-doped MOSFETs grown by M.B.E

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.743-746

1992

Volltextzugriff (PDF)

Anomalous Ge diffusion effects during Ge-condensation

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.207-210

2008

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The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.19-22

2008

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Maximum entropy mobility spectrum analysis for magnetotransport characterization of semiconductor multilayer structures

Proceedings. International Semiconductor Conference, 2002, Vol.2, p.415-418 vol.2

2002

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P-Si/sub 0.3/Ge/sub 0.7/and p-Si/sub 0.2/Ge/sub 0.8/ MOSFETs of enhanced performance

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.557-560

2003

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Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise

31st European Solid-State Device Research Conference, 2001, p.179-182

2001

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Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices

31st European Solid-State Device Research Conference, 2001, p.199-202

2001

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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

Evidence of reduced self-heating in strained Si MOSFETs

Impact ionisation in strained SiGe pMOSFETs

Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

Transconductance and mobility of Si:B delta MOSFETs

Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

Indication of Non-equilibrium Transport in SiGe p-MOSFETs

Accurate effective mobility extraction in SOI MOS transistors

Channel backscattering characteristics of high performance germanium pMOSFETs

Silicon boron delta doped fet : growth and fabrication

A systematic investigation of N-channel delta-doped MOSFETs grown by M.B.E

Anomalous Ge diffusion effects during Ge-condensation

The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

Maximum entropy mobility spectrum analysis for magnetotransport characterization of semiconductor multilayer structures

P-Si/sub 0.3/Ge/sub 0.7/and p-Si/sub 0.2/Ge/sub 0.8/ MOSFETs of enhanced performance

Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise

Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices

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