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Synthesis and Magnetic Properties of Aligned Strontium Ferrites

IEEE transactions on magnetics, 2014-06, Vol.50 (6), p.1-4

2014

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Synthesis and Magnetic Properties of MnBi(LTP) Magnets With High-Energy Product

IEEE transactions on magnetics, 2014-11, Vol.50 (11), p.1-4

2014

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Raman Spectroscopy of Graphene

AIP conference proceedings, 2008-10, Vol.1119, p.232b-232b

2008

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An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques

IEEE journal of solid-state circuits, 2021-01, Vol.56 (1), p.212-224

2021

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Reliability Evaluation of Customers in a Microgrid

IEEE transactions on power systems, 2008-08, Vol.23 (3), p.1416-1422

2008

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A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

IEEE journal of solid-state circuits, 2021-01, Vol.56 (1), p.199-211

2021

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Soft Robotic Blocks: Introducing SoBL, a Fast-Build Modularized Design Block

IEEE robotics & automation magazine, 2016-09, Vol.23 (3), p.30-41

2016

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Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

IEEE access, 2023, Vol.11, p.20196-20201

2023

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Reliability Evaluation of Distributed Generation Based on Operation Mode

IEEE transactions on power systems, 2007-05, Vol.22 (2), p.785-790

2007

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Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning

IEEE electron device letters, 2024-04, Vol.45 (4), p.716-719

2024

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Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.166-173

2022

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Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell

IEEE electron device letters, 2024-04, Vol.45 (4), p.562-565

2024

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Effect of positive bias stress on the back-gate voltage-modulated threshold voltage in double-gate amorphous InGaZnO thin-film transistors

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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Spatial degradation profiling technique in self-aligned top-gate a-InGaZnO TFTs under current-flowing stress

IEEE electron device letters, 2023-01, Vol.44 (1), p.1-1

2023

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Observation of Divacancy Formation for ZnON Thin-Film Transistors With Excessive N Content

IEEE electron device letters, 2021-07, Vol.42 (7), p.1006-1009

2021

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An X-Band Doppler Motion Sensor With a Two-Ports Oscillator

IEEE sensors journal, 2018-06, Vol.18 (11), p.4503-4508

2018

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Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

IEEE electron device letters, 2018-01, Vol.39 (1), p.47-50

2018

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Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors

IEEE electron device letters, 2022-10, Vol.43 (10), p.1685-1688

2022

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A 26-Gb/s Framed-Pulsewidth Modulation Transceiver for Extended Reach Optical Links

IEEE journal of solid-state circuits, 2024-08, Vol.59 (8), p.2506-2517

2024

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Gaussian Process Approximate Dynamic Programming for Energy-Optimal Supervisory Control of Parallel Hybrid Electric Vehicles

IEEE transactions on vehicular technology, 2022-08, Vol.71 (8), p.8367-8380

2022

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Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs

IEEE electron device letters, 2013-12, Vol.34 (12), p.1524-1526

2013

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Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature

IEEE electron device letters, 2023-01, Vol.44 (1), p.88-91

2023

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Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor

IEEE access, 2024, Vol.12, p.28531-28537

2024

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A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7- \mu m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation

IEEE journal of solid-state circuits, 2020-04, Vol.55 (4), p.889-897

2020

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Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System

IEEE access, 2021, Vol.9, p.59345-59352

2021

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Synthesis and Magnetic Properties of Aligned Strontium Ferrites

Synthesis and Magnetic Properties of MnBi(LTP) Magnets With High-Energy Product

Raman Spectroscopy of Graphene

An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques

Reliability Evaluation of Customers in a Microgrid

A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

Soft Robotic Blocks: Introducing SoBL, a Fast-Build Modularized Design Block

Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

Reliability Evaluation of Distributed Generation Based on Operation Mode

Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning

Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs

Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell

Effect of positive bias stress on the back-gate voltage-modulated threshold voltage in double-gate amorphous InGaZnO thin-film transistors

Spatial degradation profiling technique in self-aligned top-gate a-InGaZnO TFTs under current-flowing stress

Observation of Divacancy Formation for ZnON Thin-Film Transistors With Excessive N Content

An X-Band Doppler Motion Sensor With a Two-Ports Oscillator

Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors

A 26-Gb/s Framed-Pulsewidth Modulation Transceiver for Extended Reach Optical Links

Gaussian Process Approximate Dynamic Programming for Energy-Optimal Supervisory Control of Parallel Hybrid Electric Vehicles

Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs

Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature

Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor

A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7- \mu m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation

Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System

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