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1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Electronics letters, 2006-08, Vol.42 (16), p.922-923

2006

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Low-Threshold 1.3-$\mu$m GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures

IEEE photonics technology letters, 2008-06, Vol.20 (11), p.942-944

2008

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Preferred frequency of Ion Acoustic Waves in a low temperature bounded plasma

2024 IEEE International Conference on Plasma Science (ICOPS), 2024, p.1-1

2024

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Reduced temperature sensitivity of lasing wavelength in near-1.3 μm InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

Electronics letters, 2007-06, Vol.43 (12), p.670-672

2007

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A Laser Quenching Fluorescence Diagnostic System for Measuring Edge Recycling Particle Velocity Distribution

2024 IEEE International Conference on Plasma Science (ICOPS), 2024, p.1-1

2024

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Fuzzy modeling of high-dimensional systems: complexity reduction and interpretability improvement

IEEE transactions on fuzzy systems, 2000-04, Vol.8 (2), p.212-221

Jin, Y.

2000

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A framework for evolutionary optimization with approximate fitness functions

IEEE transactions on evolutionary computation, 2002-10, Vol.6 (5), p.481-494

2002

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All-optical switch using InAs quantum dots in a vertical cavity

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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Auger Recombination is NOT Necessary to Explain the Temperature Dependence of Threshold in p-doped Quantum Dot Lasers

2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest, 2006, p.155-156

2006

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Agent-based evolutionary approach for interpretable rule-based knowledge extraction

IEEE transactions on human-machine systems, 2005-05, Vol.35 (2), p.143-155

2005

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Photon iterative numerical technique for steady-state simulation of gain-clamped semiconductor optical amplifiers

IEE proceedings. Optoelectronics, 2003-12, Vol.150 (6), p.503-507

2003

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1.34mum GaInNAs quantum well lasers with low room-temperature threshold current density

Electronics letters, 2006-08, Vol.42 (16), p.923-924

2006

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1.34 µm GaInNAs quantum well lasers with low room-temperature threshold current density

Electronics letters, 2006-08, Vol.42 (16), p.1

2006

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1.34 mu m GaInNAs quantum well lasers with low room-temperature threshold current density

Electronics letters, 2006-08, Vol.42 (16), p.1-1

2006

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Reduced temperature sensitivity of lasing wavelength in near-1.3 µm InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

Electronics letters, 2007-06, Vol.43 (12), p.1

2007

Volltextzugriff (PDF)

Reduced temperature sensitivity of lasing wavelength in near-1.3mum InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

Electronics letters, 2007-06, Vol.43 (12), p.670-672

2007

Volltextzugriff (PDF)

Reduced temperature sensitivity of lasing wavelength in near-1.3 mu m InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

Electronics letters, 2007-06, Vol.43 (12), p.1-1

2007

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1.34 μm GalnNAs quantum well lasers with low room-temperature threshold current density

Electronics letters, 2006, Vol.42 (16), p.923-924

2006

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Optical control of the quality factor using coupled photonic crystal cavities

2012 Conference on Lasers and Electro-Optics (CLEO), 2012, p.1-2

2012

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1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Electronics letters, 2006-08, Vol.42 (16), p.1

2006

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1.3mum InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Electronics letters, 2006-08, Vol.42 (16), p.922-923

2006

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1.3 mu m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Electronics letters, 2006-08, Vol.42 (16), p.1-1

2006

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Quantum dots in a vertical cavity for all-optical switching devices

2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009, p.406-407

2009

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Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field

IEEE journal of quantum electronics, 2004-05, Vol.40 (5), p.513-518

2004

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Numerical and theoretical analysis of the crosstalk in linear optical amplifiers

IEEE journal of quantum electronics, 2005-05, Vol.41 (5), p.636-641

2005

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1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Low-Threshold 1.3-$\mu$m GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures

Preferred frequency of Ion Acoustic Waves in a low temperature bounded plasma

Reduced temperature sensitivity of lasing wavelength in near-1.3 μm InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

A Laser Quenching Fluorescence Diagnostic System for Measuring Edge Recycling Particle Velocity Distribution

Fuzzy modeling of high-dimensional systems: complexity reduction and interpretability improvement

A framework for evolutionary optimization with approximate fitness functions

All-optical switch using InAs quantum dots in a vertical cavity

Auger Recombination is NOT Necessary to Explain the Temperature Dependence of Threshold in p-doped Quantum Dot Lasers

Agent-based evolutionary approach for interpretable rule-based knowledge extraction

Photon iterative numerical technique for steady-state simulation of gain-clamped semiconductor optical amplifiers

1.34mum GaInNAs quantum well lasers with low room-temperature threshold current density

1.34 µm GaInNAs quantum well lasers with low room-temperature threshold current density

1.34 mu m GaInNAs quantum well lasers with low room-temperature threshold current density

Reduced temperature sensitivity of lasing wavelength in near-1.3 µm InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

Reduced temperature sensitivity of lasing wavelength in near-1.3mum InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

Reduced temperature sensitivity of lasing wavelength in near-1.3 mu m InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

1.34 μm GalnNAs quantum well lasers with low room-temperature threshold current density

Optical control of the quality factor using coupled photonic crystal cavities

1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

1.3mum InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

1.3 mu m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Quantum dots in a vertical cavity for all-optical switching devices

Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field

Numerical and theoretical analysis of the crosstalk in linear optical amplifiers

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