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A study on pseudo interface wave technique for CRDM weld defects in nuclear power plants

AIP conference proceedings, 2015, Vol.1650 (1)

2015

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an [Formula Omitted] Dielectric Layer

IEEE electron device letters, 2009-09, Vol.30 (9), p.913

2009

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an \hbox\hbox/\hbox Dielectric Layer

IEEE electron device letters, 2009-09, Vol.30 (9), p.913-915

2009

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using anhbox{Al}_{2}hbox{O}_{3}/hbox{SiN}_{x} Dielectric Layer

IEEE electron device letters, 2009-09, Vol.30 (9), p.913-915

2009

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an Al2O3/SiNx Dielectric Layer

IEEE electron device letters, 2009-09, Vol.30 (9), p.913-915

2009

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A study on nondestructive evaluation technique by the use of interface guided waves on shrink fit structure

AIP Conference Proceedings, 2014, Vol.1581 (1), p.357

2014

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an Al 2 O 3 / SiN x Dielectric Layer

IEEE electron device letters, 2009-01, Vol.30 (9)

2009

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The Discrimination of Metallic Coins Using a Scan Type Magnetic Camera

2010 Fifth IEEE International Symposium on Electronic Design, Test & Applications, 2010, p.355-359

2010

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Trap behavior in AlGaN/GaN HEMTs by post-gate-annealing

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.145-150

2004

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Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer

Electronics letters, 2003-09, Vol.39 (19), p.1-1

2003

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Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer

Electronics letters, 2003-09, Vol.39 (19), p.1412-1414

2003

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Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.181-185

2004

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Feasibility of edge-delay symbols for copy protection in optical disks

SPIE proceedings series, 2000, Vol.4090, p.289-291

2000

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Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing technique

International Semiconductor Device Research Symposium, 2003, 2003, p.112-113

2003

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Cylindrical diffusing optical fiber probe for Photo-Dynamic Therapy

2018 23rd Opto-Electronics and Communications Conference (OECC), 2018, p.1-2

2018

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A study on pseudo interface wave technique for CRDM weld defects in nuclear power plants

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an [Formula Omitted] Dielectric Layer

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an \hbox\hbox/\hbox Dielectric Layer

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using anhbox{Al}_{2}hbox{O}_{3}/hbox{SiN}_{x} Dielectric Layer

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an Al2O3/SiNx Dielectric Layer

A study on nondestructive evaluation technique by the use of interface guided waves on shrink fit structure

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an Al 2 O 3 / SiN x Dielectric Layer

The Discrimination of Metallic Coins Using a Scan Type Magnetic Camera

Trap behavior in AlGaN/GaN HEMTs by post-gate-annealing

Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer

Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer

Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors

Feasibility of edge-delay symbols for copy protection in optical disks

Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing technique

Cylindrical diffusing optical fiber probe for Photo-Dynamic Therapy

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