UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Robust learning-based super-resolution

2010 IEEE International Conference on Image Processing, 2010, p.2017-2020

2010

Volltextzugriff (PDF)

Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel

IEEE electron device letters, 2024-03, Vol.45 (3), p.404-407

2024

Volltextzugriff (PDF)

Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric

IEEE electron device letters, 2023-07, Vol.44 (7), p.1-1

2023

Volltextzugriff (PDF)

Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1839-1844

2024

Volltextzugriff (PDF)

Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5542-5548

2022

Volltextzugriff (PDF)

Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O

IEEE electron device letters, 2022-11, Vol.43 (11), p.1909-1912

2022

Volltextzugriff (PDF)

Extremely scaled silicon nano-CMOS devices

Proceedings of the IEEE, 2003-11, Vol.91 (11), p.1860-1873

2003

Volltextzugriff (PDF)

Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO2 Gate Stacks With Vertical Channel Configurations

IEEE electron device letters, 2024-09, Vol.45 (9), p.1673-1676

2024

Volltextzugriff (PDF)

Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO 2 Gate Stacks With Vertical Channel Configurations

IEEE electron device letters, 2024-09, Vol.45 (9), p.1673-1676

2024

Volltextzugriff (PDF)

Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O Channels

IEEE electron device letters, 2022, p.1-1

2022

Volltextzugriff (PDF)

A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS

IEEE journal of solid-state circuits, 2011-01, Vol.46 (1), p.97-106

2011

Volltextzugriff (PDF)

23.1 A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power

2019 IEEE International Solid- State Circuits Conference - (ISSCC), 2019, p.378-380

2019

Volltextzugriff (PDF)

Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.1989-1996

2004

Volltextzugriff (PDF)

Effects of High-Pressure Annealing on Random Telegraph Signal Noise Characteristic of Source Follower Block in CMOS Image Sensor

IEEE electron device letters, 2013-02, Vol.34 (2), p.190-192

2013

Volltextzugriff (PDF)

A 5G mm-Wave Single Chip 8-channel FEM with Best-in-class 22% Power Efficiency and Embedded Die Substrate (EDS) Technology

2021 IEEE MTT-S International Microwave Symposium (IMS), 2021, p.721-724

2021

Volltextzugriff (PDF)

High threshold voltage p-GaN gate power devices on 200 mm Si

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.315-318

2013

Volltextzugriff (PDF)

Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

IEEE electron device letters, 2003-03, Vol.24 (3), p.186-188

2003

Volltextzugriff (PDF)

Improvement of Field-Emission Characteristics of Carbon Nanotubes by Post Electrical Treatment

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2392-2402

2007

Volltextzugriff (PDF)

A Study of Dielectric Relaxation and Capacitance Matching of // MIM Capacitors

IEEE electron device letters, 2013-10, Vol.34 (10), p.1223-1225

2013

Volltextzugriff (PDF)

Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain

IEEE electron device letters, 2001-09, Vol.22 (9), p.447-448

2001

Volltextzugriff (PDF)

Portable receivers for digital multimedia broadcasting

IEEE transactions on consumer electronics, 2004-05, Vol.50 (2), p.666-673

2004

Volltextzugriff (PDF)

Output characteristics of the high-power microwave generated from a coaxial vircator with a bar reflector in a drift region

IEEE transactions on plasma science, 2006-06, Vol.34 (3), p.937-944

2006

Volltextzugriff (PDF)

A Study of Dielectric Relaxation and Capacitance Matching of Al2O3/HfO2/Al2O3 MIM Capacitors

IEEE electron device letters, 2013-10, Vol.34 (10), p.1223-1225

2013

Volltextzugriff (PDF)

Low-frequency noise characteristics in p-channel FinFETs

IEEE electron device letters, 2002-12, Vol.23 (12), p.722-724

2002

Volltextzugriff (PDF)

45nm low-power embedded pseudo-SRAM with ECC-based auto-adjusted self-refresh scheme

2009 IEEE International Symposium on Circuits and Systems (ISCAS), 2009, p.2517-2520

2009

Volltextzugriff (PDF)

1 – 25 von 72

Suche als RSS-Feed

Aktive Filter

KollektionIEEE Xplore

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(27)
Mit Volltextzugriff
(71)

Publikationsform

Sprache

Englisch
(72)

Erscheinungsjahr

n.n

Thema

Science & Technology
(47)
Technology
(46)
Engineering
(38)
Engineering, Electrical & Electronic
(38)
Applied Sciences
(13)
Computer Science
(13)
Exact Sciences And Technology
(13)
Physical Sciences
(13)
Physics
(12)
Electronics
(10)
Physics, Applied
(10)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(9)
Telecommunications
(9)
Threshold Voltage
(9)
Electrodes
(8)
Transistors
(8)
Atomic-Layer Deposition
(7)
Logic Gates
(7)
Annealing
(6)
Cmos Process
(6)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Robust learning-based super-resolution

Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel

Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric

Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O

Extremely scaled silicon nano-CMOS devices

Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO2 Gate Stacks With Vertical Channel Configurations

Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO 2 Gate Stacks With Vertical Channel Configurations

Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O Channels

A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS

23.1 A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power

Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs

Effects of High-Pressure Annealing on Random Telegraph Signal Noise Characteristic of Source Follower Block in CMOS Image Sensor

A 5G mm-Wave Single Chip 8-channel FEM with Best-in-class 22% Power Efficiency and Embedded Die Substrate (EDS) Technology

High threshold voltage p-GaN gate power devices on 200 mm Si

Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

Improvement of Field-Emission Characteristics of Carbon Nanotubes by Post Electrical Treatment

A Study of Dielectric Relaxation and Capacitance Matching of // MIM Capacitors

Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain

Portable receivers for digital multimedia broadcasting

Output characteristics of the high-power microwave generated from a coaxial vircator with a bar reflector in a drift region

A Study of Dielectric Relaxation and Capacitance Matching of Al2O3/HfO2/Al2O3 MIM Capacitors

Low-frequency noise characteristics in p-channel FinFETs

45nm low-power embedded pseudo-SRAM with ECC-based auto-adjusted self-refresh scheme

Aktive Filter

Suchergebnisse filtern