UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory

IEEE access, 2021, Vol.9, p.47391-47398

2021

Volltextzugriff (PDF)

Improved Crossbar Array Architecture for Compensating Interconnection Resistance: Ferroelectric HZO-Based Synapse Case

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.192-196

2022

Volltextzugriff (PDF)

Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.626-631

2019

Volltextzugriff (PDF)

Further investigations on traps stabilities in random telegraph signal noise and the application to a novel concept physical unclonable function (PUF) with robust reliabilities

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T40-T41

2015

Volltextzugriff (PDF)

Dual-Point Technique for Multi-Trap RTN Signal Extraction

IEEE access, 2020, Vol.8, p.88141-88146

2020

Volltextzugriff (PDF)

Further understandings on impacts of La incorporation in HfSiON/TiN nFETs through comprehensive random telegraph noise characterizations

2015 IEEE International Integrated Reliability Workshop (IIRW), 2015, p.29-33

2015

Volltextzugriff (PDF)

Deep insight into process-induced pre-existing traps and PBTI stress-induced trap generations in high-k gate dielectrics through systematic RTN characterizations and ab initio calculations

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

Volltextzugriff (PDF)

Hole Mobility Characteristics in Si Nanowire pMOSFETs on (110) Silicon-on-Insulator

IEEE electron device letters, 2010-11, Vol.31 (11), p.1181-1183

2010

Volltextzugriff (PDF)

Statistical analyses of random telegraph noise amplitude in ultra-narrow (deep sub-10nm) silicon nanowire transistors

2017 Symposium on VLSI Technology, 2017, p.T50-T51

2017

Volltextzugriff (PDF)

Experimental Investigations of Electron Mobility in Silicon Nanowire nMOSFETs on (110) Silicon-on-Insulator

IEEE electron device letters, 2009-11, Vol.30 (11), p.1203-1205

2009

Volltextzugriff (PDF)

A Unified Distribution Form of the Density of States in Disordered Organic Semiconductors

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4507-4513

2022

Volltextzugriff (PDF)

Analytical model of energy level alignment at metal-organic interface facilitating hole injection

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, p.225-228

2017

Volltextzugriff (PDF)

Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions

IEEE transactions on computer-aided design of integrated circuits and systems, 2020-11, Vol.39 (11), p.4042-4051

2020

Volltextzugriff (PDF)

Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energies

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

Volltextzugriff (PDF)

Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS 2

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4758-4761

2021

Volltextzugriff (PDF)

Experimentally-Validated Crossbar Model for Defect-Aware Training of Neural Networks

IEEE transactions on circuits and systems. II, Express briefs, 2022-05, Vol.69 (5), p.2468-2472

2022

Volltextzugriff (PDF)

Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS2

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4758-4761

2021

Volltextzugriff (PDF)

Re-Annealing-Induced Recovery in 7nm Hf 0.5 Zr 0.5 O 2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair

IEEE electron device letters, 2023-08, Vol.44 (8), p.1288-1291

2023

Volltextzugriff (PDF)

Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2173-2179

2022

Volltextzugriff (PDF)

Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory

IEEE transactions on computer-aided design of integrated circuits and systems, 2022-11, Vol.41 (11), p.4797-4807

2022

Volltextzugriff (PDF)

Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-6

2023

Volltextzugriff (PDF)

Implementation of Image Compression by Using High-Precision In-Memory Computing Scheme Based on NOR Flash Memory

IEEE electron device letters, 2021-11, Vol.42 (11), p.1603-1606

2021

Volltextzugriff (PDF)

In-Depth Investigation of Seed Layer Engineering in Ferroelectric Hf 0.5 Zr 0.5 O 2 Film: Wakeup-Free Achievement and Reliability Mechanisms

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1048-1053

2024

Volltextzugriff (PDF)

Complementary Digital and Analog Resistive Switching Based on AlO ₓ Monolayer Memristors for Mixed-Precision Neuromorphic Computing

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4488-4492

2023

Volltextzugriff (PDF)

Complementary Digital and Analog Resistive Switching Based on AlOₓ Monolayer Memristors for Mixed-Precision Neuromorphic Computing

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4488-4492

2023

Volltextzugriff (PDF)

1 – 25 von 118

Suche als RSS-Feed

Aktive Filter

KollektionIEEE Xplore

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(44)
Mit Volltextzugriff
(94)

Publikationsform

Tagungsberichte
(74)
Artikel
(44)

Sprache

Englisch
(118)
Japanisch
(6)

Erscheinungsjahr

n.n

Thema

Technology
(68)
Science & Technology
(67)
Engineering
(65)
Engineering, Electrical & Electronic
(65)
Silicon
(33)
Three-Dimensional Displays
(30)
Flash Memory
(26)
Flash Memories
(20)
Degradation
(19)
Logic Gates
(18)
Physics
(17)
Physical Sciences
(16)
Reliability
(16)
Field Effect Transistors
(15)
Physics, Applied
(15)
Ferroelectricity
(14)
Switches
(13)
Ferroelectric Materials
(12)
Tunneling
(12)
Annealing
(11)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Zeitschrift / Serie

3 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(5)
... seit 90 Tagen
(6)

Menü

Weitere Dienste

Einstellungen

Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory

Improved Crossbar Array Architecture for Compensating Interconnection Resistance: Ferroelectric HZO-Based Synapse Case

Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory

Further investigations on traps stabilities in random telegraph signal noise and the application to a novel concept physical unclonable function (PUF) with robust reliabilities

Dual-Point Technique for Multi-Trap RTN Signal Extraction

Further understandings on impacts of La incorporation in HfSiON/TiN nFETs through comprehensive random telegraph noise characterizations

Deep insight into process-induced pre-existing traps and PBTI stress-induced trap generations in high-k gate dielectrics through systematic RTN characterizations and ab initio calculations

Hole Mobility Characteristics in Si Nanowire pMOSFETs on (110) Silicon-on-Insulator

Statistical analyses of random telegraph noise amplitude in ultra-narrow (deep sub-10nm) silicon nanowire transistors

Experimental Investigations of Electron Mobility in Silicon Nanowire nMOSFETs on (110) Silicon-on-Insulator

A Unified Distribution Form of the Density of States in Disordered Organic Semiconductors

Analytical model of energy level alignment at metal-organic interface facilitating hole injection

Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions

Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energies

Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS 2

Experimentally-Validated Crossbar Model for Defect-Aware Training of Neural Networks

Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS2

Re-Annealing-Induced Recovery in 7nm Hf 0.5 Zr 0.5 O 2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair

Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance

Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory

Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing

Implementation of Image Compression by Using High-Precision In-Memory Computing Scheme Based on NOR Flash Memory

In-Depth Investigation of Seed Layer Engineering in Ferroelectric Hf 0.5 Zr 0.5 O 2 Film: Wakeup-Free Achievement and Reliability Mechanisms

Complementary Digital and Analog Resistive Switching Based on AlO ₓ Monolayer Memristors for Mixed-Precision Neuromorphic Computing

Complementary Digital and Analog Resistive Switching Based on AlOₓ Monolayer Memristors for Mixed-Precision Neuromorphic Computing

Aktive Filter

Suchergebnisse filtern