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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2207-2215
2006
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High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, 2005-07, Vol.26 (7), p.435-437
2005
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High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits
IEEE electron device letters, 2007-05, Vol.28 (5), p.328-331
2007
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AlGaN-GaN double-channel HEMTs
IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.438-446
2005
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Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse
IEEE electron device letters, 2007-03, Vol.28 (3), p.189-191
2007
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DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs
IEEE transactions on electron devices, 2007-01, Vol.54 (1), p.2-10
2007
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AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
IEEE electron device letters, 2006-01, Vol.27 (1), p.10-12
2006
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Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, 2006-08, Vol.27 (8), p.633-635
2006
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Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor
IEEE electron device letters, 2005-07, Vol.26 (7), p.432-434
2005
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Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1474-1477
2006
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AlGaN-GaN HEMTs on patterned silicon (111) substrate
IEEE electron device letters, 2005-03, Vol.26 (3), p.130-132
2005
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