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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2207-2215

2006

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High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

IEEE electron device letters, 2005-07, Vol.26 (7), p.435-437

2005

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High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

IEEE electron device letters, 2007-05, Vol.28 (5), p.328-331

2007

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Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse

IEEE electron device letters, 2007-03, Vol.28 (3), p.189-191

2007

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AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

IEEE electron device letters, 2006-01, Vol.27 (1), p.10-12

2006

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Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

IEEE electron device letters, 2006-08, Vol.27 (8), p.633-635

2006

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Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

IEEE electron device letters, 2005-07, Vol.26 (7), p.432-434

2005

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AlGaN-GaN HEMTs on patterned silicon (111) substrate

IEEE electron device letters, 2005-03, Vol.26 (3), p.130-132

2005

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Planar Two-dimensional Electron Gas (2DEG) IDT SAW Filter on AlGaN/GaN Heterostructure

2007 IEEE/MTT-S International Microwave Symposium, 2007, p.2043-2046

2007

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Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

63rd Device Research Conference Digest, 2005. DRC '05, 2005, Vol.1, p.179-180

2005

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A Planar Integration Process for E/D-mode AlGaN/GaN HEMT DCFL Integrated Circuits

2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, p.261-264

2006

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Normally-off AlGaN/GaN Low-Density-Drain HEMTs (LDD-HEMT) with Enhanced Breakdown Voltage and Suppressed Current Collapse

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007, p.257-260

2007

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A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure

2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers, 2005, p.385-388

2005

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Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment

2007 IEEE International Electron Devices Meeting, 2007, p.389-392

2007

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Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure

2007 7th IEEE Conference on Nanotechnology (IEEE NANO), 2007, p.1041-1044

2007

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GaN on patterned silicon (GPS) technique for GaN-based integrated microsensors

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.298-301

2005

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Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs

2005 Asia-Pacific Microwave Conference Proceedings, 2005, Vol.2, p.4 pp.

2005

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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

AlGaN-GaN HEMTs on patterned silicon (111) substrate

Planar Two-dimensional Electron Gas (2DEG) IDT SAW Filter on AlGaN/GaN Heterostructure

Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

A Planar Integration Process for E/D-mode AlGaN/GaN HEMT DCFL Integrated Circuits

Normally-off AlGaN/GaN Low-Density-Drain HEMTs (LDD-HEMT) with Enhanced Breakdown Voltage and Suppressed Current Collapse

A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure

Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment

Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure

GaN on patterned silicon (GPS) technique for GaN-based integrated microsensors

Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs

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