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Research on Temperature Effect in Insulator-Metal Transition Selector Based on NbOx Thin Films

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5448-5452

2018

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Interconversion Between Bipolar and Complementary Behavior in Nanoscale Resistive Switching Devices

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.619-624

2019

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The Co-Improvement of Selectivity and Uniformity on NbOₓ-Based Selector by Al-Doping

IEEE electron device letters, 2022-06, Vol.43 (6), p.870-873

2022

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The Relationship Between Resistive Protective Oxide (RPO) and Hot Carrier Stress (HCS) Degradation in n-Channel LD SOI MOSFET

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.962-967

2021

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Realization of Storage and Synaptic Simulation Behaviors Based on Different Forming Modes

IEEE electron device letters, 2019-08, Vol.40 (8), p.1257-1260

2019

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Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs

IEEE electron device letters, 2017-06, Vol.38 (6), p.705-707

2017

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Performance and Reliability Optimization of Supercritical-Nitridation-Treated AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4317-4321

2021

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Embedded 1-Mb ReRAM-Based Computing-in- Memory Macro With Multibit Input and Weight for CNN-Based AI Edge Processors

IEEE journal of solid-state circuits, 2020-01, Vol.55 (1), p.203-215

2020

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Two-Way Transpose Multibit 6T SRAM Computing-in-Memory Macro for Inference-Training AI Edge Chips

IEEE journal of solid-state circuits, 2022-02, Vol.57 (2), p.609-624

2022

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Ultrahigh Uniformity and Stability in NbOx-Based Selector for 3-D Memory by Using Ru Electrode

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2255-2259

2021

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Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

IEEE electron device letters, 2015-06, Vol.36 (6), p.564-566

2015

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Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

IEEE electron device letters, 2018-02, Vol.39 (2), p.212-215

2018

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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

IEEE electron device letters, 2013-03, Vol.34 (3), p.399-401

2013

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Comprehensive Regulation of the Threshold Oscillation for Neuromorphic Systems Based on Cryogenic Performance of NbO₂ Device

IEEE electron device letters, 2021-05, Vol.42 (5), p.692-695

2021

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Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics

IEEE electron device letters, 2016-04, Vol.37 (4), p.359-362

2016

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Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

IEEE electron device letters, 2012-12, Vol.33 (12), p.1696-1698

2012

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Research on Temperature Effect in Insulator–Metal Transition Selector Based on NbO x Thin Films

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5448-5452

2018

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Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors

IEEE transactions on electron devices, 2018-02, Vol.65 (2), p.533-536

2018

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Gate Insulator Morphology-Dependent Reliability in Organic Thin-Film Transistors

IEEE electron device letters, 2016-02, Vol.37 (2), p.228-230

2016

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Enhancement of Brightness Uniformity by a New Voltage-Modulated Pixel Design for AMOLED Displays

IEEE electron device letters, 2006-09, Vol.27 (9), p.743-745

2006

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Ultrahigh Uniformity and Stability in NbO x -Based Selector for 3-D Memory by Using Ru Electrode

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2255-2259

2021

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Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs

IEEE electron device letters, 2017-07, Vol.38 (7), p.835-838

2017

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Design of 12-Lead Electrocardiogram Smart Clothing Based on Capacitive Sensing Technique

IEEE sensors journal, 2024-05, Vol.24 (10), p.16826-16835

2024

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Parameter Identification of One-Diode Dynamic Equivalent Circuit Model for Photovoltaic Panel

IEEE journal of photovoltaics, 2020-01, Vol.10 (1), p.219-225

2020

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Design of Smart Clothing With Automatic Cardiovascular Diseases Detection

IEEE transactions on human-machine systems, 2023-10, Vol.53 (5), p.1-10

2023

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Research on Temperature Effect in Insulator-Metal Transition Selector Based on NbOx Thin Films

Interconversion Between Bipolar and Complementary Behavior in Nanoscale Resistive Switching Devices

The Co-Improvement of Selectivity and Uniformity on NbOₓ-Based Selector by Al-Doping

The Relationship Between Resistive Protective Oxide (RPO) and Hot Carrier Stress (HCS) Degradation in n-Channel LD SOI MOSFET

Realization of Storage and Synaptic Simulation Behaviors Based on Different Forming Modes

Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs

Performance and Reliability Optimization of Supercritical-Nitridation-Treated AlGaN/GaN High-Electron-Mobility Transistors

Embedded 1-Mb ReRAM-Based Computing-in- Memory Macro With Multibit Input and Weight for CNN-Based AI Edge Processors

Two-Way Transpose Multibit 6T SRAM Computing-in-Memory Macro for Inference-Training AI Edge Chips

Ultrahigh Uniformity and Stability in NbOx-Based Selector for 3-D Memory by Using Ru Electrode

Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Comprehensive Regulation of the Threshold Oscillation for Neuromorphic Systems Based on Cryogenic Performance of NbO₂ Device

Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Research on Temperature Effect in Insulator–Metal Transition Selector Based on NbO x Thin Films

Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors

Gate Insulator Morphology-Dependent Reliability in Organic Thin-Film Transistors

Enhancement of Brightness Uniformity by a New Voltage-Modulated Pixel Design for AMOLED Displays

Ultrahigh Uniformity and Stability in NbO x -Based Selector for 3-D Memory by Using Ru Electrode

Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs

Design of 12-Lead Electrocardiogram Smart Clothing Based on Capacitive Sensing Technique

Parameter Identification of One-Diode Dynamic Equivalent Circuit Model for Photovoltaic Panel

Design of Smart Clothing With Automatic Cardiovascular Diseases Detection

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