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A contrast-enhanced trilateral filter for MR image denoising
2011 IEEE International Symposium on Biomedical Imaging: From Nano to Macro, 2011, p.1823-1826
2011
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A generic multiple-feedback architecture and method for the design of high-order Σ-Δ modulators
IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 2002-07, Vol.49 (7), p.465-473, Article 465
2002
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White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
IEEE photonics technology letters, 2003-01, Vol.15 (1), p.18-20
2003
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High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures
IEEE electron device letters, 2008-02, Vol.29 (2), p.158-160
2008
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400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
IEEE journal of selected topics in quantum electronics, 2002-07, Vol.8 (4), p.744-748
2002
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Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes
IEEE journal of quantum electronics, 2002-05, Vol.38 (5), p.446-450
2002
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Very-High Temperature (200 ^C) and High-Speed Operation of Cascade GaN-Based Green Light- Emitting Diodes With an InGaN Insertion Layer
IEEE photonics technology letters, 2010-07, Vol.22 (14), p.1033-1035
2010
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Enhancement in light output of InGaN-based microhole array light-emitting diodes
IEEE photonics technology letters, 2005-06, Vol.17 (6), p.1163-1165
2005
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The improvement in modulation speed of GaN-based Green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication
IEEE photonics technology letters, 2006-08, Vol.18 (15), p.1636-1638
2006
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High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD
IEEE photonics technology letters, 2006-06, Vol.18 (11), p.1213-1215
2006
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Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire
IEEE photonics technology letters, 2011-07, Vol.23 (14), p.968-970
2011
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Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact
IEEE photonics technology letters, 2004-04, Vol.16 (4), p.1002-1004
2004
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White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer
IEEE photonics technology letters, 2002-04, Vol.14 (4), p.450-452
2002
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Investigation and Localization of the SiGe Source/Drain (S/D) Strain-Induced Defects in PMOSFET With 45-nm CMOS Technology
IEEE electron device letters, 2007-05, Vol.28 (5), p.408-411
2007
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Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light
IEEE photonics technology letters, 2006-12, Vol.18 (24), p.2593-2595
2006
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Linear Cascade Arrays of GaN-Based Green Light-Emitting Diodes for High-Speed and High-Power Performance
IEEE photonics technology letters, 2007-09, Vol.19 (18), p.1368-1370
2007
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Characteristics and modelling of inter-cell interference for orthogonal frequency-division multiple access systems in multipath Rayleigh fading channels
IET communications, 2012-11, Vol.6 (17), p.3015-3025
2012
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Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
IEEE electron device letters, 2003-03, Vol.24 (3), p.129-131
2003
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Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions
IEEE photonics technology letters, 2008-03, Vol.20 (6), p.449-451
2008
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Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers
IEEE electron device letters, 2011-10, Vol.32 (10), p.1400-1402
2011
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GaN-Based LEDs With AZO:Y Upper Contact
IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.134-139
2010
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The Structure of GaN-Based Transverse Junction Blue LED Array for Uniform Distribution of Injected Current/Carriers
IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1292-1297
2009
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GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars
IEEE photonics technology letters, 2009-09, Vol.21 (18), p.1293-1295
2009
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InGaN/GaN tunnel-injection blue light-emitting diodes
IEEE transactions on electron devices, 2002-06, Vol.49 (6), p.1093-1095
2002
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Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique
IEEE transactions on electron devices, 2011-02, Vol.58 (2), p.495-500
2011
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