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High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

IEEE electron device letters, 2008-04, Vol.29 (4), p.294-296

2008

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Submicrometer inversion-type enhancement-mode ingaas MOSFET with Atomic-Layer-Deposited Al2O3 as gate dielectric

IEEE electron device letters, 2007-11, Vol.28 (11), p.935-938

2007

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

IEEE electron device letters, 2009-07, Vol.30 (7), p.700-702

2009

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Microstructural control of Nb addition in nanocrystalline hard magnets with different Nd content

IEEE transactions on magnetics, 2003-09, Vol.39 (5), p.2935-2937

2003

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

IEEE electron device letters, 2009-07, Vol.30 (7), p.700-702

2009

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Effects of Positive and Negative Stresses on III-V MOSFETs With \hbox\hbox Gate Dielectric

IEEE electron device letters, 2011-04, Vol.32 (4), p.488-490

2011

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Extraction of Channel Electron Effective Mobility in InGaAs/Al O n-FinFETs

IEEE transactions on nanotechnology, 2013-09, Vol.12 (5), p.806-809

2013

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Studies of new YDy-based R2Fe14B magnets for high temperature performance (R = Y + Dy + Nd)

IEEE transactions on magnetics, 2004-07, Vol.40 (4), p.2907-2909

2004

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Analysis of Radio Wave Propagation Attenuation in Complex Environment

2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2023, p.1-3

2023

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Behavior of Nb atoms in Nb substituted Nd2Fe14B nanocrystalline alloys investigated by atom probe tomography

IEEE transactions on magnetics, 2004-07, Vol.40 (4), p.2886-2888

2004

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Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs

IEEE transactions on nanotechnology, 2013-09, Vol.12 (5), p.806-809

2013

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Degradation of III-V inversion-type enhancement-mode MOSFETs

2010 IEEE International Reliability Physics Symposium, 2010, p.536-542

2010

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Scaling of InGaAs MOSFETs into deep-submicron regime (invited)

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-6

2010

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First experimental demonstration of gate-all-around III-V MOSFETs by top-down approach

2011 International Electron Devices Meeting, 2011, p.33.2.1-33.2.4

2011

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Operation-effects merging for collaborative design of personalized product

2015 IEEE 19th International Conference on Computer Supported Cooperative Work in Design (CSCWD), 2015, p.489-493

2015

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Structural joins: a primitive for efficient XML query pattern matching

Proceedings 18th International Conference on Data Engineering, 2002, p.141-152

2002

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Algebraic approaches for fault identification in discrete-event systems

IEEE transactions on automatic control, 2005-12, Vol.50 (12), p.2048-2055

2005

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Effects of Positive and Negative Stresses on III-V MOSFETs With [Formula Omitted] Gate Dielectric

IEEE electron device letters, 2011-04, Vol.32 (4), p.488

2011

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Effects of Positive and Negative Stresses on III-V MOSFETs With hbox Al 2 hbox O 3 Gate Dielectric

IEEE electron device letters, 2011-04, Vol.32 (4), p.488-490

2011

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A comparative study on the microstructure and magnetic properties of melt-spun Re2Fe14B/α-Fe and Re2Fe14B/Fe3B (Re = Nd, Pr) nanocomposites

IEEE transactions on magnetics, 2005, Vol.41 (10), p.3862-3864

2005

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RF performance of short channel graphene field-effect transistor

2010 International Electron Devices Meeting, 2010, p.9.6.1-9.6.3

2010

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Finite-time tracking controller design for nonholonomic systems with extended chained form

IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 2005-11, Vol.52 (11), p.798-802

2005

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Role of Alloying Elements in Improvement of Alnico Permanent Magnet Alloys

AIP conference proceedings, 2012-03

2012

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Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited Al@@d2@O@@d3@ as Gate Dielectric

IEEE electron device letters, 2007-11, Vol.28 (11), p.935-938

2007

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Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited Al sub(2)O sub(3) as Gate Dielectric

IEEE electron device letters, 2007-11, Vol.28 (11), p.935-938

2007

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High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

Submicrometer inversion-type enhancement-mode ingaas MOSFET with Atomic-Layer-Deposited Al2O3 as gate dielectric

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

Microstructural control of Nb addition in nanocrystalline hard magnets with different Nd content

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

Effects of Positive and Negative Stresses on III-V MOSFETs With \hbox\hbox Gate Dielectric

Extraction of Channel Electron Effective Mobility in InGaAs/Al O n-FinFETs

Studies of new YDy-based R2Fe14B magnets for high temperature performance (R = Y + Dy + Nd)

Analysis of Radio Wave Propagation Attenuation in Complex Environment

Behavior of Nb atoms in Nb substituted Nd2Fe14B nanocrystalline alloys investigated by atom probe tomography

Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs

Degradation of III-V inversion-type enhancement-mode MOSFETs

Scaling of InGaAs MOSFETs into deep-submicron regime (invited)

First experimental demonstration of gate-all-around III-V MOSFETs by top-down approach

Operation-effects merging for collaborative design of personalized product

Structural joins: a primitive for efficient XML query pattern matching

Algebraic approaches for fault identification in discrete-event systems

Effects of Positive and Negative Stresses on III-V MOSFETs With [Formula Omitted] Gate Dielectric

Effects of Positive and Negative Stresses on III-V MOSFETs With hbox Al 2 hbox O 3 Gate Dielectric

A comparative study on the microstructure and magnetic properties of melt-spun Re2Fe14B/α-Fe and Re2Fe14B/Fe3B (Re = Nd, Pr) nanocomposites

RF performance of short channel graphene field-effect transistor

Finite-time tracking controller design for nonholonomic systems with extended chained form

Role of Alloying Elements in Improvement of Alnico Permanent Magnet Alloys

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited Al@@d2@O@@d3@ as Gate Dielectric

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited Al sub(2)O sub(3) as Gate Dielectric

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