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Friction and Wear of AZ31B Magnesium Alloy during Sliding against Tool Steel

AIP conference proceedings, 2012-03

2012

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Role of Work Hardening during Sliding Wear of Heat Treated 2024 Al Alloy

AIP conference proceedings, 2012-03

2012

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Terahertz Antenna-in-Package Design and Measurement for 6G Communications System

IEEE transactions on antennas and propagation, 2024-02, Vol.72 (2), p.1-1

2024

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Isolation Improvement Technique in Dual-Polarized Antenna for Sub-THz Antenna-in-Package

IEEE antennas and wireless propagation letters, 2023-12, Vol.22 (12), p.3032-3036

2023

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A Group Travel Recommender System based on Group Approximate Constraint Satisfaction

IEEE access, 2024-01, Vol.12, p.1-1

2024

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Stub-loaded Via Transition for Wideband Impedance Matching of Sub-THz 6G Antenna-in-Package

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, 2023, p.307-310

2023

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Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.1-6

2023

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A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.204-206

2018

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A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2619-2627

2014

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A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.679-686

2022

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A Square Patch Capacitive Voltage Divider for Measuring High-Voltage Ultrawideband Pulses in a Coaxial Pulse Forming Line

IEEE transactions on instrumentation and measurement, 2016-03, Vol.65 (3), p.680-684

2016

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A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking

IEEE journal of solid-state circuits, 2019-01, Vol.54 (1), p.197-209

2019

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Enhanced Charge Transfer of QDs/Polymer Hybrid LED by Interface Controlling

IEEE electron device letters, 2013-05, Vol.34 (5), p.656-658

2013

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE electron device letters, 2015-07, Vol.36 (7), p.672-674

2015

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On-Chip Nano Pulse Test Element Group for Analysis of Synaptic Devices

2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS), 2022, p.1-3

2022

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CMOS Platform TEG for Development of High Performance Synaptic Devices

2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS), 2022, p.1-4

2022

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A Study on System Level UFS M-PHY Reliability Measurement Method Using RDVS

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-7

2021

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Impact of H 2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al 2 O 3 /HfO 2 Gate-Stack

IEEE electron device letters, 2015-07, Vol.36 (7), p.672-674

2015

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Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance Si1-xGex pMOSFETs With High-κ/Metal Gate Stacks

IEEE electron device letters, 2010-11, Vol.31 (11), p.1211-1213

2010

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Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance \hbox\hbox pMOSFETs With High- k/Metal Gate Stacks

IEEE electron device letters, 2010-11, Vol.31 (11), p.1211-1213

2010

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7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip

2015 IEEE International Solid State Circuits Conference (ISSCC), 2015, p.1-3

2015

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7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

2015 IEEE International Solid State Circuits Conference (ISSCC), 2015, p.1-3

2015

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Acceleration of bulk memory operations in a heterogeneous multicore architecture

2012 21st International Conference on Parallel Architectures and Compilation Techniques (PACT), 2012, p.423-424

2012

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Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance [Formula Omitted] pMOSFETs With High-[Formula Omitted]/Metal Gate Stacks

IEEE electron device letters, 2010-11, Vol.31 (11), p.1211

2010

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Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance hbox Si 1 - x hbox Ge x pMOSFETs With High- k /Metal Gate Stacks

IEEE electron device letters, 2010-11, Vol.31 (11), p.1211-1213

2010

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Friction and Wear of AZ31B Magnesium Alloy during Sliding against Tool Steel

Role of Work Hardening during Sliding Wear of Heat Treated 2024 Al Alloy

Terahertz Antenna-in-Package Design and Measurement for 6G Communications System

Isolation Improvement Technique in Dual-Polarized Antenna for Sub-THz Antenna-in-Package

A Group Travel Recommender System based on Group Approximate Constraint Satisfaction

Stub-loaded Via Transition for Wideband Impedance Matching of Sub-THz 6G Antenna-in-Package

Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors

A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking

A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

A Square Patch Capacitive Voltage Divider for Measuring High-Voltage Ultrawideband Pulses in a Coaxial Pulse Forming Line

A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking

Enhanced Charge Transfer of QDs/Polymer Hybrid LED by Interface Controlling

Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

On-Chip Nano Pulse Test Element Group for Analysis of Synaptic Devices

CMOS Platform TEG for Development of High Performance Synaptic Devices

A Study on System Level UFS M-PHY Reliability Measurement Method Using RDVS

Impact of H 2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al 2 O 3 /HfO 2 Gate-Stack

Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance Si1-xGex pMOSFETs With High-κ/Metal Gate Stacks

Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance \hbox\hbox pMOSFETs With High- k/Metal Gate Stacks

7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

Acceleration of bulk memory operations in a heterogeneous multicore architecture

Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance [Formula Omitted] pMOSFETs With High-[Formula Omitted]/Metal Gate Stacks

Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance hbox Si 1 - x hbox Ge x pMOSFETs With High- k /Metal Gate Stacks

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