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Z-Interference and Z-Disturbance in Vertical Gate-Type 3-D NAND

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1047-1053

2016

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Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4706-4709

2019

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A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1811-1815

2022

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Investigation of the Self-Heating Effect in High Performance Organic TFTs With Multi-Finger Structure

IEEE electron device letters, 2022-08, Vol.43 (8), p.1243-1246

2022

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Gate Dielectric Leakage Reduction in Hard-Mask Defined and Dry-Etch Patterned Organic TFTs Devices

IEEE electron device letters, 2022-01, Vol.43 (1), p.48-51

2022

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A Comprehensive Study of Double-Density Hemi-Cylindrical (HC) 3-D NAND Flash

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5362-5367

2020

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Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2423-2429

2022

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An Erase Efficiency Boosting Strategy for 3D Charge Trap NAND Flash

IEEE transactions on computers, 2018-09, Vol.67 (9), p.1246-1258

2018

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Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies

IEEE electron device letters, 2021-06, Vol.42 (6), p.847-850

2021

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Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs

IEEE electron device letters, 2020-05, Vol.41 (5), p.721-724

2020

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Influence of Different Fin Configurations on Small-Signal Performance and Linearity for AlGaN/GaN Fin-HEMTs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3302-3309

2019

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Suppressing Drain-Induced Barrier Lowering and Kink Effect in Low-Temperature Poly-Si TFTs Using a Partitioned Light Shield

IEEE electron device letters, 2022-04, Vol.43 (4), p.576-579

2022

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Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

IEEE electron device letters, 2018-02, Vol.39 (2), p.212-215

2018

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Single Germanium Quantum-dot Placement Along With Self-Aligned Electrodes for Effective Management of Single Charge Tunneling

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3224-3230

2012

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First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.7B.2-1-7B.2-6

2022

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An Extremely Scaled Hemi-Cylindrical (HC) 3D NAND Device with Large Vt Memory Window (>10V) and Excellent 100K Endurance

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

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Optimization of PESD implant design for ESD robustness of 5V drain-back N-LDMOSFET

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.EL-3-1-EL-3-4

2016

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A novel bit alterable 3D NAND flash using junction-free p-channel device with band-to-band tunneling induced hot-electron programming

2013 Symposium on VLSI Technology, 2013, p.T152-T153

2013

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A New Figure of Merit, } /(I,}} /I,}} )} , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device

IEEE journal of the Electron Devices Society, 2017-01, Vol.5 (1), p.18-22

2017

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Size tunable Ge quantum dot phototrasnsistors for optical interconnects with high figure of merits

2015 International Symposium on VLSI Technology, Systems and Applications, 2015, p.1-2

2015

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Design and Enhancement of ESD Reliability in Circular UHV 300-V nLDMOS Power Components

2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia), 2018, p.1145-1148

2018

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A New ICT Architecture of Smart Water Network Platform for Improving Management Performance: Maintenance, Security, and Deployment Cost

2024 10th International Conference on Applied System Innovation (ICASI), 2024, p.157-159

2024

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NBL Layer Impacts on ESD Reliability for 60- V Power pLDMOS Transistors

2018 IEEE International Conference on Consumer Electronics-Taiwan (ICCE-TW), 2018, p.1-2

2018

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Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics

2017 Silicon Nanoelectronics Workshop (SNW), 2017, p.127-128

2017

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An SoC Integration Ready VLIW-Driven CNN Accelerator with High Utilization and Scalability

2022 IEEE 4th International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2022, p.246-249

2022

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Z-Interference and Z-Disturbance in Vertical Gate-Type 3-D NAND

Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process

A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)

Investigation of the Self-Heating Effect in High Performance Organic TFTs With Multi-Finger Structure

Gate Dielectric Leakage Reduction in Hard-Mask Defined and Dry-Etch Patterned Organic TFTs Devices

A Comprehensive Study of Double-Density Hemi-Cylindrical (HC) 3-D NAND Flash

Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs

An Erase Efficiency Boosting Strategy for 3D Charge Trap NAND Flash

Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies

Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs

Influence of Different Fin Configurations on Small-Signal Performance and Linearity for AlGaN/GaN Fin-HEMTs

Suppressing Drain-Induced Barrier Lowering and Kink Effect in Low-Temperature Poly-Si TFTs Using a Partitioned Light Shield

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Single Germanium Quantum-dot Placement Along With Self-Aligned Electrodes for Effective Management of Single Charge Tunneling

First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures

An Extremely Scaled Hemi-Cylindrical (HC) 3D NAND Device with Large Vt Memory Window (>10V) and Excellent 100K Endurance

Optimization of PESD implant design for ESD robustness of 5V drain-back N-LDMOSFET

A novel bit alterable 3D NAND flash using junction-free p-channel device with band-to-band tunneling induced hot-electron programming

A New Figure of Merit, } /(I,}} /I,}} )} , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device

Size tunable Ge quantum dot phototrasnsistors for optical interconnects with high figure of merits

Design and Enhancement of ESD Reliability in Circular UHV 300-V nLDMOS Power Components

A New ICT Architecture of Smart Water Network Platform for Improving Management Performance: Maintenance, Security, and Deployment Cost

NBL Layer Impacts on ESD Reliability for 60- V Power pLDMOS Transistors

Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics

An SoC Integration Ready VLIW-Driven CNN Accelerator with High Utilization and Scalability

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