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Atomization energy approach to the quantitative evaluation of catalytic activities of metal oxides during dehydrogenation of MgH2

Journal of alloys and compounds, 2011-09, Vol.509, p.S612-S615

2011

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Multiscale analysis of stress distribution in teeth under applied forces

Dental materials, 2009-01, Vol.25 (1), p.67-73

2009

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Density functional theory study on the oxidation mechanisms of aldehydes as reductants for electroless Cu deposition process

Electrochimica acta, 2005-11, Vol.51 (5), p.906-915

2005

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Meso-FE modelling of textile composites: Road map, data flow and algorithms

Composites science and technology, 2007-07, Vol.67 (9), p.1870-1891

2007

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Hall effect in the quasi two-dimensional strongly correlated metal CeMIn5 (M = Co, Rh)

Journal of magnetism and magnetic materials, 2007-03, Vol.310 (2), p.334-336

2007

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Formation mechanisms of diamond precursors during the nucleation process

Diamond and related materials, 1997-05, Vol.6 (8), p.1047-1050

1997

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A unified approach to the analysis of the chemical bond in hydrides and hydrocarbons

Acta materialia, 2007-12, Vol.55 (20), p.6673-6680

2007

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Microstructure of the clad layer of chromium on to mild steel by low-pressure laser spraying

Surface & coatings technology, 1998-03, Vol.100, p.420-423

1998

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A modelling of diamond nucleation

Diamond and related materials, 1995-05, Vol.4 (7), p.903-907

1995

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High rate deposition of SiO2 on large-scale glass by dc arc plasma enhanced CVD

Journal of non-crystalline solids, 1994-11, Vol.178, p.215-219

1994

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Synthesis of Fe2W by low pressure laser spraying

Surface & coatings technology, 2002-03, Vol.151-152, p.325-328

2002

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Simulation study and experiment on laser-ablation surface cleaning

Optics and laser technology, 2001-04, Vol.33 (3), p.189-194

2001

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Electrical property on copper thin film with chromium under-layer

Thin solid films, 1998-04, Vol.317 (1), p.202-205

1998

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Preparation of electrical insulating films for high temperature devices by ion beam assisted plasma CVD

Materials chemistry and physics, 1998-07, Vol.54 (1), p.131-134

1998

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Electrode-width dependence of resistivity and structure of aluminum electrode thin film electron beam evaporated on lithium tantalate

Thin solid films, 1998-04, Vol.319 (1), p.128-131

1998

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Structural and physical properties of Co films DC-bias-plasma-sputter-deposited on MgO(001)

Applied surface science, 1996-02, Vol.92 (1-4), p.47-51

1996

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Growth structure of nickel films on GaAs(001) by d.c.-biased plasma-sputter-deposition

Thin solid films, 1998-04, Vol.319 (1), p.115-119

1998

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FMR, XRD and XHRTEM characterization of stresses in an epitaxial Ni–Cu film prepared on MgO(001) by d.c. biased plasma sputter deposition

Thin solid films, 1997-05, Vol.299 (1), p.59-62

1997

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Characterization of cobalt films grown on MgO(001) by dc-biased-sputter deposition

Journal of crystal growth, 1996-09, Vol.166 (1-4), p.792-797

1996

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Ferromagnetic resonance in Ni films produced by biased d.c. sputter deposition onto SiO2 and Si(100)

Thin solid films, 1995-01, Vol.254 (1-2), p.224-228

1995

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Growth kinetics of antimony layers prepared on SiOx by molecular beam deposition

Thin solid films, 1995-04, Vol.259 (1), p.32-37

1995

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Microstructure of the clad layer of chromium on to mild steel by low-pressure laser spraying

Surface & coatings technology, 1998, Vol.100-01 (1-3), p.420-423

1998

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Structural and electrical properties of Ni films grown on Si(100) and SiO2 by d.c. bias sputtering

Thin solid films, 1993-06, Vol.229 (1), p.107-112

1993

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Segregation coefficients and activation of indium in cadmium telluride grown from tellurium-rich melt by the Bridgman technique

Journal of crystal growth, 1991-07, Vol.112 (4), p.723-728

1991

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Thermodynamic analysis of molecular beam epitaxy of II–VI semiconductors

Journal of crystal growth, 1987-09, Vol.84 (3), p.425-430

1987

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Atomization energy approach to the quantitative evaluation of catalytic activities of metal oxides during dehydrogenation of MgH2

Multiscale analysis of stress distribution in teeth under applied forces

Density functional theory study on the oxidation mechanisms of aldehydes as reductants for electroless Cu deposition process

Meso-FE modelling of textile composites: Road map, data flow and algorithms

Hall effect in the quasi two-dimensional strongly correlated metal CeMIn5 (M = Co, Rh)

Formation mechanisms of diamond precursors during the nucleation process

A unified approach to the analysis of the chemical bond in hydrides and hydrocarbons

Microstructure of the clad layer of chromium on to mild steel by low-pressure laser spraying

A modelling of diamond nucleation

High rate deposition of SiO2 on large-scale glass by dc arc plasma enhanced CVD

Synthesis of Fe2W by low pressure laser spraying

Simulation study and experiment on laser-ablation surface cleaning

Electrical property on copper thin film with chromium under-layer

Preparation of electrical insulating films for high temperature devices by ion beam assisted plasma CVD

Electrode-width dependence of resistivity and structure of aluminum electrode thin film electron beam evaporated on lithium tantalate

Structural and physical properties of Co films DC-bias-plasma-sputter-deposited on MgO(001)

Growth structure of nickel films on GaAs(001) by d.c.-biased plasma-sputter-deposition

FMR, XRD and XHRTEM characterization of stresses in an epitaxial Ni–Cu film prepared on MgO(001) by d.c. biased plasma sputter deposition

Characterization of cobalt films grown on MgO(001) by dc-biased-sputter deposition

Ferromagnetic resonance in Ni films produced by biased d.c. sputter deposition onto SiO2 and Si(100)

Growth kinetics of antimony layers prepared on SiOx by molecular beam deposition

Microstructure of the clad layer of chromium on to mild steel by low-pressure laser spraying

Structural and electrical properties of Ni films grown on Si(100) and SiO2 by d.c. bias sputtering

Segregation coefficients and activation of indium in cadmium telluride grown from tellurium-rich melt by the Bridgman technique

Thermodynamic analysis of molecular beam epitaxy of II–VI semiconductors

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