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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Thin solid films, 2012-05, Vol.520 (14), p.4551-4555

2012

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Spherical top data system (STDS) software for the simulation of spherical top spectra

Journal of quantitative spectroscopy & radiative transfer, 1998-03, Vol.59 (3), p.471-480

1998

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Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

Thin solid films, 2012-05, Vol.520 (14), p.4576-4579

2012

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Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2

Thin solid films, 2003-08, Vol.437 (1-2), p.248-256

2003

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Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

Microelectronic engineering, 2019-06, Vol.214, p.104-109

2019

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MIM capacitors using amorphous high-k PrTixOy dielectrics

Microelectronic engineering, 2005-06, Vol.80, p.313-316

2005

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Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4kbit RRAM arrays performance

Microelectronic engineering, 2017-06, Vol.178, p.1-4

2017

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Optical properties and band gap characterization of high dielectric constant oxides

Thin solid films, 2012-05, Vol.520 (14), p.4532-4535

2012

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XTDS and SPVIEW: Graphical tools for the analysis and simulation of high-resolution molecular spectra

Journal of molecular spectroscopy, 2008-09, Vol.251 (1), p.102-113

2008

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Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance

Microelectronic engineering, 2017-06, Vol.178, p.1-4

2017

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Thin solid films, 2010-05, Vol.518 (15), p.4380-4384

2010

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Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

Microelectronic engineering, 2011-07, Vol.88 (7), p.1133-1135

2011

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The partition sum of methane at high temperature

Journal of quantitative spectroscopy & radiative transfer, 2008-11, Vol.109 (16), p.2697-2706

2008

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The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

Thin solid films, 2009-10, Vol.517 (23), p.6334-6336

2009

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CexAlyOz/TiN stack analysis for Metal–Insulator–Metal applications: Effect of annealing and the metal electrode deposition method

Thin solid films, 2012-05, Vol.520 (14), p.4518-4522

2012

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Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Thin solid films, 2013-06, Vol.536, p.68-73

2013

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Textured strontium titanate layers on platinum by atomic layer deposition

Thin solid films, 2012-08, Vol.520 (21), p.6535-6540

2012

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ALD grown NbTaO sub(x based MIM capacitors)

Microelectronic engineering, 2011-08, Vol.88 (8), p.2447-2451

2011

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Symmetry-adapted tensorial formalism to model rovibrational and rovibronic spectra of molecules pertaining to various point groups

Journal of molecular spectroscopy, 2004, Vol.228 (2), p.620-634

2004

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ALD grown NbTaOx based MIM capacitors

Microelectronic engineering, 2011-08, Vol.88 (8), p.2447-2451

2011

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Enhanced leakage current behavior of Sr 2Ta 2O 7−x/SrTiO 3 bilayer dielectrics for metal–insulator–metal capacitors

Thin solid films, 2011, Vol.519 (17), p.5734-5739

2011

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C3v Top Data System (C3vTDS) software for spectrum simulation of XY3Z symmetric-top molecules using the group chain

Journal of quantitative spectroscopy & radiative transfer, 2010-06, Vol.111 (9), p.1305-1315

2010

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C sub(3)vTop Data System (C sub(3)vDS) software for spectrum simulation of XY sub(3)Z symmetric-top molecules using the O(3)[superset of]C sub([infinity])vsuperset of]C sub(3)vgroup chain

Journal of quantitative spectroscopy & radiative transfer, 2010-06, Vol.111 (9), p.1305-1315

2010

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Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

Thin solid films, 2011-03, Vol.519 (11), p.3831-3834

2011

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO 2 dielectrics

Thin solid films, 2010, Vol.518 (15), p.4380-4384

2010

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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Spherical top data system (STDS) software for the simulation of spherical top spectra

Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2

Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

MIM capacitors using amorphous high-k PrTixOy dielectrics

Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4kbit RRAM arrays performance

Optical properties and band gap characterization of high dielectric constant oxides

XTDS and SPVIEW: Graphical tools for the analysis and simulation of high-resolution molecular spectra

Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance

High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

The partition sum of methane at high temperature

The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

CexAlyOz/TiN stack analysis for Metal–Insulator–Metal applications: Effect of annealing and the metal electrode deposition method

Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Textured strontium titanate layers on platinum by atomic layer deposition

ALD grown NbTaO sub(x based MIM capacitors)

Symmetry-adapted tensorial formalism to model rovibrational and rovibronic spectra of molecules pertaining to various point groups

ALD grown NbTaOx based MIM capacitors

Enhanced leakage current behavior of Sr 2Ta 2O 7−x/SrTiO 3 bilayer dielectrics for metal–insulator–metal capacitors

C3v Top Data System (C3vTDS) software for spectrum simulation of XY3Z symmetric-top molecules using the group chain

C sub(3)vTop Data System (C sub(3)vDS) software for spectrum simulation of XY sub(3)Z symmetric-top molecules using the O(3)[superset of]C sub([infinity])vsuperset of]C sub(3)vgroup chain

Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

High performance metal–insulator–metal capacitors with atomic vapor deposited HfO 2 dielectrics

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