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Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Thin solid films, 2013-07, Vol.540, p.96-105

2013

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Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

Journal of crystal growth, 2014-06, Vol.396, p.66-70

2014

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Ultrathin metallic interlayers in vacuum deposited MoOx/metal/MoOx electrodes for organic solar cells

Applied surface science, 2016-12, Vol.390, p.703-709

2016

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Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Thin solid films, 2016-05, Vol.607, p.25-31

2016

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Thermomagnetic switching in strong/weak/strong ferromagnet stack detected with resonant X-ray magnetic reflectometry

Journal of magnetism and magnetic materials, 2020-03, Vol.497, p.165930, Article 165930

2020

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Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

Journal of crystal growth, 2018-06, Vol.491, p.26-30

2018

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X-ray scattering by the fused silica surface etched by low-energy Ar ions

Journal of X-ray science and technology, 2019-01, Vol.27 (5), p.857-870

2019

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Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24GHz) plasma from silicon tetrafluoride precursor

Thin solid films, 2014-07, Vol.562, p.114-117

2014

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TOF-SIMS study on surface modification of reed switch blades by pulsing nitrogen plasma

Applied surface science, 2013-01, Vol.265, p.642-647

2013

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Real-time measurement of substrate temperature in molecular beam epitaxy using low-coherence tandem interferometry

Journal of crystal growth, 2015-03, Vol.413, p.42-45

2015

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Antimony segregation and n-type doping in Si/Si(111) films grown by molecular beam epitaxy

Journal of crystal growth, 2017-10, Vol.475, p.291-294

2017

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The features of magnetotransport properties of the Mn δ-doped GaAs structure with multiple conduction channels

Journal of magnetism and magnetic materials, 2024-11, Vol.609, p.172463, Article 172463

2024

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Study of the temporal stability of the reflection coefficient in the vicinity of 58.4 nm of narrow-band Sc/Al mirrors with Si or ScNx interlayers and a MoSi2 protective cap layer

Thin solid films, 2023-10, Vol.783, Article 140047

2023

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Investigation of NV centers charge states in CVD diamond layers doped by nitrogen and phosphorous

Journal of luminescence, 2021-11, Vol.239, p.118404, Article 118404

2021

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Investigation of phosphorus-doped nanocrystalline diamond films for photocathode application

Vacuum, 2023-09, Vol.215, p.112335, Article 112335

2023

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Time-of-flight secondary ion mass spectrometry study on Be/Al-based multilayer interferential structures

Thin solid films, 2018-09, Vol.661, p.65-70

2018

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Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-04, Vol.537, p.65-70

2023

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The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

Thin solid films, 2015-02, Vol.577, p.11-16

2015

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Investigation of boron incorporation in delta doped diamond layers by secondary ion mass spectrometry

Thin solid films, 2018-05, Vol.653, p.215-222

2018

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Plasma irradiation effects in phthalocyanine films

Applied surface science, 2004-05, Vol.230 (1), p.241-248

2004

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Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure

Physica. E, Low-dimensional systems & nanostructures, 2014-03, Vol.57, p.42-46

2014

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InGaAsN/GaAs QD and QW structures grown by MOVPE

Journal of crystal growth, 2003-02, Vol.248, p.343-347

2003

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Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD

Physica. E, Low-dimensional systems & nanostructures, 2003-04, Vol.17, p.634-635

2003

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TOF-SIMS study on surface modification of reed switch blades by pulsing nitrogen plasma

Applied surface science, 2013, Vol.265, p.642-647

2013

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99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Journal of crystal growth, 2019-03, Vol.509, p.1-7

2019

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Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

Ultrathin metallic interlayers in vacuum deposited MoOx/metal/MoOx electrodes for organic solar cells

Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Thermomagnetic switching in strong/weak/strong ferromagnet stack detected with resonant X-ray magnetic reflectometry

Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

X-ray scattering by the fused silica surface etched by low-energy Ar ions

Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24GHz) plasma from silicon tetrafluoride precursor

TOF-SIMS study on surface modification of reed switch blades by pulsing nitrogen plasma

Real-time measurement of substrate temperature in molecular beam epitaxy using low-coherence tandem interferometry

Antimony segregation and n-type doping in Si/Si(111) films grown by molecular beam epitaxy

The features of magnetotransport properties of the Mn δ-doped GaAs structure with multiple conduction channels

Study of the temporal stability of the reflection coefficient in the vicinity of 58.4 nm of narrow-band Sc/Al mirrors with Si or ScNx interlayers and a MoSi2 protective cap layer

Investigation of NV centers charge states in CVD diamond layers doped by nitrogen and phosphorous

Investigation of phosphorus-doped nanocrystalline diamond films for photocathode application

Time-of-flight secondary ion mass spectrometry study on Be/Al-based multilayer interferential structures

Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

Investigation of boron incorporation in delta doped diamond layers by secondary ion mass spectrometry

Plasma irradiation effects in phthalocyanine films

Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure

InGaAsN/GaAs QD and QW structures grown by MOVPE

Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD

TOF-SIMS study on surface modification of reed switch blades by pulsing nitrogen plasma

99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

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