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Growth and electronic structure of boron-doped graphene

Physical review. B, Condensed matter and materials physics, 2013-04, Vol.87 (15), Article 155437

2013

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Growth and electronic structure of nitrogen-doped graphene on Ni(111)

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (7), Article 075401

2012

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Room temperature local nematicity in FeSe superconductor

Physical review. B, 2019-07, Vol.100 (2), p.1, Article 020501

2019

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Photoinduced dynamics of nematic order parameter in FeSe

Physical review. B, 2019-05, Vol.99 (18), p.180102(R), Article 180102

2019

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Acoustoelastic effect in anisotropic layered structures

Physical review. B, Condensed matter, 2000-12, Vol.62 (21), p.13963-13969

2000

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Initial-vortex-entry-related magnetic hysteresis in thin-film SQUID magnetometers

Physical review. B, Condensed matter, 1994-11, Vol.50 (18), p.13664-13673

1994

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Tip-related artifacts in scanning tunneling potentiometry

Physical review. B, Condensed matter, 1990-01, Vol.41 (2), p.1212-1215

1990

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Role of charge transfer, dipole-dipole interactions, and electrostatics in Fermi-level pinning at a molecular heterojunction on a metal surface

Physical review. B, Condensed matter and materials physics, 2013-01, Vol.87 (3), Article 035440

2013

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Dislocation arrangements in pentacene thin films

Physical review. B, Condensed matter and materials physics, 2004-09, Vol.70 (12), p.125401.1-125401.7, Article 125401

2004

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Interplay between morphology, structure, and electronic properties at diindenoperylene-gold interfaces

Physical review. B, Condensed matter, 2003-09, Vol.68 (11), Article 115428

2003

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Suppressing charge noise decoherence in superconducting charge qubits

Physical review. B, Condensed matter and materials physics, 2008-05, Vol.77 (18), Article 180502

2008

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Renormalization of the electron-phonon coupling in the one-band Hubbard model

Physical review. B, Condensed matter and materials physics, 2004-09, Vol.70 (9), p.094510.1-094510.6, Article 094510

2004

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Ionization of coherent excitons by strong terahertz fields

Physical review. B, Condensed matter and materials physics, 2012-02, Vol.85 (7), Article 075307

2012

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Pentacene ultrathin film formation on reduced and oxidized Si surfaces

Physical review. B, Condensed matter, 2003-03, Vol.67 (12), Article 125406

2003

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Tuning hole-injection barriers at organic/metal interfaces exploiting the orientation of a molecular acceptor interlayer

Physical review. B, Condensed matter and materials physics, 2011-10, Vol.84 (16), Article 165302

2011

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Filling dependence of the Mott transition in the degenerate Hubbard model

Physical review. B, Condensed matter, 1999-12, Vol.60 (23), p.15714-15720

1999

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Carrier-carrier scattering and optical dephasing in highly excited semiconductors

Physical review. B, Condensed matter, 1992-01, Vol.45 (3), p.1107-1115

1992

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Evidence of biexcitonic contributions to four-wave mixing in GaAs quantum wells

Physical review. B, Condensed matter, 1994-11, Vol.50 (19), p.14730-14733

1994

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Excitation and polarization effects in semiconductor four-wave-mixing spectroscopy

Physical review. B, Condensed matter, 1994-05, Vol.49 (20), p.14382-14386

1994

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Transient many-body effects in the semiconductor optical Stark effect : a numerical study

Physical review. B, Condensed matter, 1991-03, Vol.43 (8), p.6520-6529

1991

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Equilibration length of electrons in spin-polarized edge channels

Physical review. B, Condensed matter, 1992-02, Vol.45 (7), p.3932-3935

1992

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Polarization dependence of beating phenomena at the energetically lowest exciton transition in GaAs quantum wells

Physical review. B, Condensed matter, 1995-04, Vol.51 (16), p.10909-10914

1995

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Experimental studies of the localization transition in the quantum Hall regime

Physical review. B, Condensed matter, 1992-07, Vol.46 (3), p.1596-1602

1992

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Edge channels and the role of contacts in the quantum hall regime

Physical review. B, Condensed matter, 1990-10, Vol.42 (12), p.7633-7636

1990

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Bulk and surface electronic structures of Si(111)2×1 and Si(111)7×7 studied by angle-resolved photoelectron spectroscopy

Physical review. B, Condensed matter, 1985-03, Vol.31 (6), p.3795-3804

1985

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Growth and electronic structure of boron-doped graphene

Growth and electronic structure of nitrogen-doped graphene on Ni(111)

Room temperature local nematicity in FeSe superconductor

Photoinduced dynamics of nematic order parameter in FeSe

Acoustoelastic effect in anisotropic layered structures

Initial-vortex-entry-related magnetic hysteresis in thin-film SQUID magnetometers

Tip-related artifacts in scanning tunneling potentiometry

Role of charge transfer, dipole-dipole interactions, and electrostatics in Fermi-level pinning at a molecular heterojunction on a metal surface

Dislocation arrangements in pentacene thin films

Interplay between morphology, structure, and electronic properties at diindenoperylene-gold interfaces

Suppressing charge noise decoherence in superconducting charge qubits

Renormalization of the electron-phonon coupling in the one-band Hubbard model

Ionization of coherent excitons by strong terahertz fields

Pentacene ultrathin film formation on reduced and oxidized Si surfaces

Tuning hole-injection barriers at organic/metal interfaces exploiting the orientation of a molecular acceptor interlayer

Filling dependence of the Mott transition in the degenerate Hubbard model

Carrier-carrier scattering and optical dephasing in highly excited semiconductors

Evidence of biexcitonic contributions to four-wave mixing in GaAs quantum wells

Excitation and polarization effects in semiconductor four-wave-mixing spectroscopy

Transient many-body effects in the semiconductor optical Stark effect : a numerical study

Equilibration length of electrons in spin-polarized edge channels

Polarization dependence of beating phenomena at the energetically lowest exciton transition in GaAs quantum wells

Experimental studies of the localization transition in the quantum Hall regime

Edge channels and the role of contacts in the quantum hall regime

Bulk and surface electronic structures of Si(111)2×1 and Si(111)7×7 studied by angle-resolved photoelectron spectroscopy

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