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One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering

Applied physics letters, 2005-12, Vol.87 (23), p.231903-231903-3

2005

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Synthesis and temperature-dependent near-band-edge emission of chain-like Mg-doped ZnO nanoparticles

Applied physics letters, 2006-03, Vol.88 (10)

2006

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Direct evaluation of the equilibrium distribution of physical clusters by a grand canonical Monte Carlo simulation

The Journal of chemical physics, 1998-03, Vol.108 (9), p.3416-3423

1998

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Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films

Applied physics letters, 2006-02, Vol.88 (6)

2006

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Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

Applied physics letters, 2016-04, Vol.108 (15)

2016

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Binary nucleation of sulfuric acid-water: Monte Carlo simulation

The Journal of chemical physics, 1998-04, Vol.108 (16), p.6829-6848

1998

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High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Surface roughness scattering in two dimensional electron gas channel

Applied physics letters, 2010-12, Vol.97 (26), p.262111-262111-3

2010

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Improvement of electroluminescent performance of n -ZnO/AlN/ p -GaN light-emitting diodes by optimizing the AlN barrier layer

Journal of applied physics, 2011-05, Vol.109 (9), p.093708-093708-6

2011

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Monte Carlo simulation of gamma-ray response of BaF2 and CaF2

Journal of applied physics, 2013-11, Vol.114 (17)

2013

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Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer

Journal of applied physics, 2002-07, Vol.92 (1), p.511-514

2002

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General in situ chemical etching synthesis of ZnO nanotips array

Applied physics letters, 2008-10, Vol.93 (15), p.153110-153110-3

2008

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Photoluminescence of InAs quantum dots grown on GaAs surface

Applied physics letters, 2000-10, Vol.77 (18), p.2837-2839

2000

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Multi-wavelength surface emitting quantum cascade laser based on equivalent phase shift

Journal of applied physics, 2014-01, Vol.115 (3), p.33106

2014

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Thermal redistribution of photocarriers between bimodal quantum dots

Journal of applied physics, 2001-08, Vol.90 (4), p.1973-1976

2001

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Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires

Applied physics letters, 2001-05, Vol.78 (21), p.3202-3204

2001

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Quantum-dot growth simulation on periodic stress of substrate

The Journal of chemical physics, 2005-09, Vol.123 (9), p.094708-094708-4

2005

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Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy

Applied physics letters, 2009-06, Vol.94 (22)

2009

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Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

Journal of applied physics, 2009-05, Vol.105 (10), p.103108-103108-6

2009

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Synthesis and optical properties of S-doped ZnO nanowires

Applied physics letters, 2003-06, Vol.82 (26), p.4791-4793

2003

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Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1−xAs (0⩽x⩽0.3)

Journal of applied physics, 2000-09, Vol.88 (6), p.3392-3395

2000

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Measurement of polar C -plane and nonpolar A -plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

Applied physics letters, 2009-04, Vol.94 (16), p.163301-163301-3

2009

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Spin polarization of 87Rb atoms with ultranarrow linewidth diode laser: Numerical simulation

AIP advances, 2016-08, Vol.6 (8), p.085110-085110-8

2016

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Anomalous temperature dependence of photoluminescence from InAs quantum dots

Journal of applied physics, 2000-09, Vol.88 (5), p.2529-2532

2000

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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy

Journal of applied physics, 2010-10, Vol.108 (8), p.083513-083513-4

2010

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One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering

Synthesis and temperature-dependent near-band-edge emission of chain-like Mg-doped ZnO nanoparticles

Direct evaluation of the equilibrium distribution of physical clusters by a grand canonical Monte Carlo simulation

Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

Binary nucleation of sulfuric acid-water: Monte Carlo simulation

High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy

Surface roughness scattering in two dimensional electron gas channel

Improvement of electroluminescent performance of n -ZnO/AlN/ p -GaN light-emitting diodes by optimizing the AlN barrier layer

Monte Carlo simulation of gamma-ray response of BaF2 and CaF2

Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer

General in situ chemical etching synthesis of ZnO nanotips array

Photoluminescence of InAs quantum dots grown on GaAs surface

Multi-wavelength surface emitting quantum cascade laser based on equivalent phase shift

Thermal redistribution of photocarriers between bimodal quantum dots

Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires

Quantum-dot growth simulation on periodic stress of substrate

Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy

Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

Synthesis and optical properties of S-doped ZnO nanowires

Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1−xAs (0⩽x⩽0.3)

Measurement of polar C -plane and nonpolar A -plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

Spin polarization of 87Rb atoms with ultranarrow linewidth diode laser: Numerical simulation

Anomalous temperature dependence of photoluminescence from InAs quantum dots

The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy

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