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Microdamage in polycrystalline ceramics under dynamic compression and tension

Journal of applied physics, 2005-07, Vol.98 (2)

2005

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Effect of plating current density and annealing on impurities in electroplated Cu film

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-07, Vol.23 (4), p.658-662

2005

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Energy dispersive x-ray diffraction of charge density waves via chemical filtering

Review of scientific instruments, 2005-06, Vol.76 (6), p.063913-063913-4

2005

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Optimization of post- N 2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-07, Vol.22 (4), p.1792-1796

2004

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Effect of deposition temperature on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-05, Vol.22 (3), p.494-499

2004

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Roles of copper mechanical characteristics in electropolishing

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-01, Vol.22 (1), p.116-119

2004

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Improving the quality of electroplated copper films by rapid thermal annealing

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-03, Vol.21 (2), p.858-861

2003

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Leveling effects of copper electrolytes with hybrid-mode additives

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-11, Vol.20 (6), p.2233-2237

2002

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Investigations of pulse current electrodeposition for damascene copper metals

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-11, Vol.20 (6), p.2295-2298

2002

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Microleveling mechanisms and applications of electropolishing on planarization of copper metallization

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-09, Vol.20 (5), p.2149-2153

2002

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On the search for C–H–O hydrogen bonding in aqueous acetic acid: Combined high-pressure infrared spectroscopy and ab initio calculations study

The Journal of chemical physics, 2002-08, Vol.117 (8), p.3799-3803

2002

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Wetting effect on gap filling submicron damascene by an electrolyte free of levelers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-07, Vol.20 (4), p.1311-1316

2002

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A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy

Applied physics letters, 2002-06, Vol.80 (24), p.4558-4560

2002

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Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.940-945

2002

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Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2002-03, Vol.20 (2), p.608-612

2002

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Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-05, Vol.19 (3), p.767-773

2001

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Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition

Applied physics letters, 2000-10, Vol.77 (16), p.2521-2523

2000

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Improved contact performance of GaN film using Si diffusion

Applied physics letters, 2000-04, Vol.76 (14), p.1878-1880

2000

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Formation and characteristics of silicon nanocrystals in plasma-enhanced chemical-vapor-deposited silicon-rich oxide

Journal of applied physics, 2000-03, Vol.87 (6), p.2808-2815

2000

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Deposition temperature effects of high density plasma chemical vapor deposition films for subquarter micron devices application

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-09, Vol.17 (5), p.2341-2344

1999

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Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-07, Vol.17 (4), p.1456-1463

1999

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Determination of vibrational energy relaxation rates of C–H,D,T stretching modes on hydrogen, deuterium, and tritium-terminated H,D,T/C(111) and H,D,T/C(110) diamond surfaces using molecular dynamics simulation: Thermal effect

The Journal of chemical physics, 1998-10, Vol.109 (16), p.6898-6904

1998

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A highly efficient organic second-order nonlinear optical crystal based on a donor-acceptor substituted 4-nitrophenylhydrazone

Applied physics letters, 1997-10, Vol.71 (15), p.2064-2066

1997

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Growth and characterizations of GaN on SiC substrates with buffer layers

Journal of applied physics, 1997-09, Vol.82 (5), p.2378-2382

1997

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Persistent photoconductivity in n-type GaN

Journal of applied physics, 1997-07, Vol.82 (2), p.899-901

1997

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Microdamage in polycrystalline ceramics under dynamic compression and tension

Effect of plating current density and annealing on impurities in electroplated Cu film

Energy dispersive x-ray diffraction of charge density waves via chemical filtering

Optimization of post- N 2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application

Effect of deposition temperature on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide

Roles of copper mechanical characteristics in electropolishing

Improving the quality of electroplated copper films by rapid thermal annealing

Leveling effects of copper electrolytes with hybrid-mode additives

Investigations of pulse current electrodeposition for damascene copper metals

Microleveling mechanisms and applications of electropolishing on planarization of copper metallization

On the search for C–H–O hydrogen bonding in aqueous acetic acid: Combined high-pressure infrared spectroscopy and ab initio calculations study

Wetting effect on gap filling submicron damascene by an electrolyte free of levelers

A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy

Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability

Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry

Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper

Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition

Improved contact performance of GaN film using Si diffusion

Formation and characteristics of silicon nanocrystals in plasma-enhanced chemical-vapor-deposited silicon-rich oxide

Deposition temperature effects of high density plasma chemical vapor deposition films for subquarter micron devices application

Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors

Determination of vibrational energy relaxation rates of C–H,D,T stretching modes on hydrogen, deuterium, and tritium-terminated H,D,T/C(111) and H,D,T/C(110) diamond surfaces using molecular dynamics simulation: Thermal effect

A highly efficient organic second-order nonlinear optical crystal based on a donor-acceptor substituted 4-nitrophenylhydrazone

Growth and characterizations of GaN on SiC substrates with buffer layers

Persistent photoconductivity in n-type GaN

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