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Instabilities and Taylor dispersion in isothermal binary thin fluid films

Physics of fluids (1994), 2008-10, Vol.20 (10), p.102103-102103-11

2008

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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Applied physics letters, 2001-02, Vol.78 (9), p.1252-1254

2001

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Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Journal of applied physics, 2020-11, Vol.128 (18)

2020

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Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7 μ m

Applied physics letters, 2012-04, Vol.100 (18), p.181103-181103-3

2012

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A simplified GaN/AlGaN quantum cascade detector with an alloy extractor

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells

Applied physics letters, 2005-09, Vol.87 (11)

2005

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Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯) surfaces

Applied physics letters, 2017-01, Vol.110 (2)

2017

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Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Applied physics letters, 2006-04, Vol.88 (15)

2006

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Fermi-level pinning and intrinsic surface states of Al 1 − x In x N ( 10 1 ¯ 0 ) surfaces

Applied physics letters, 2017-01, Vol.110 (2)

2017

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Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

Applied physics letters, 2001-09, Vol.79 (10), p.1483-1485

2001

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Strain-induced interface instability in GaN∕AlN multiple quantum wells

Applied physics letters, 2007-08, Vol.91 (6)

2007

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Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Journal of applied physics, 2009-03, Vol.105 (6)

2009

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Selective oxidation of AlInN layers for current confinement in III-nitride devices

Applied physics letters, 2005-08, Vol.87 (7), p.072102-072102-3

2005

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Strain and compositional fluctuations in Al 0.81 In 0.19 N /GaN heterostructures

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Journal of applied physics, 2012-02, Vol.111 (3), p.033517-033517-10

2012

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Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes

Applied physics letters, 2001-03, Vol.78 (11), p.1538-1540

2001

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Blue lasing at room temperature in high quality factor GaN∕AlInN microdisks with InGaN quantum wells

Applied physics letters, 2007-02, Vol.90 (6)

2007

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Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

Journal of applied physics, 2011-01, Vol.109 (2)

2011

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Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Applied physics letters, 2007-01, Vol.90 (3), p.033514-033514-3

2007

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Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm

Applied physics letters, 2003-02, Vol.82 (6), p.868-870

2003

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Contactless electroreflectance of polar and nonpolar GaN/AlGaNquantum wells

Journal of applied physics, 2011-01, Vol.109 (2), p.026103-026103-3

2011

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Different pressure behavior of GaN/AlGaN quantum structures grown alongpolar and nonpolar crystallographic directions

Journal of applied physics, 2009-03, Vol.105 (6), p.063104-063104-6

2009

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Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Applied physics letters, 1999-05, Vol.74 (22), p.3353-3355

1999

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Surfactant mediated epitaxial growth of InxGa1-xAs on GaAs (001)

Applied physics letters, 1992-07, Vol.61 (1), p.99-101

1992

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Instabilities and Taylor dispersion in isothermal binary thin fluid films

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7 μ m

A simplified GaN/AlGaN quantum cascade detector with an alloy extractor

Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells

Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯) surfaces

Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Fermi-level pinning and intrinsic surface states of Al 1 − x In x N ( 10 1 ¯ 0 ) surfaces

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

Strain-induced interface instability in GaN∕AlN multiple quantum wells

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Selective oxidation of AlInN layers for current confinement in III-nitride devices

Strain and compositional fluctuations in Al 0.81 In 0.19 N /GaN heterostructures

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes

Blue lasing at room temperature in high quality factor GaN∕AlInN microdisks with InGaN quantum wells

Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm

Contactless electroreflectance of polar and nonpolar GaN/AlGaNquantum wells

Different pressure behavior of GaN/AlGaN quantum structures grown alongpolar and nonpolar crystallographic directions

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Surfactant mediated epitaxial growth of InxGa1-xAs on GaAs (001)

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