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Maximum Li storage in Si nanowires for the high capacity three-dimensional Li-ion battery

Applied physics letters, 2010-02, Vol.96 (5), p.053110-053110-3

2010

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Micro electrical impedance spectroscopy on a needle for ex vivo discrimination between human normal and cancer renal tissues

Biomicrofluidics, 2016-05, Vol.10 (3), p.034109-034109

2016

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Thermal stability and small-signal characteristics of AlGaN/GaN HEMTs with gate insertion metal layer for millimeter-wave applications

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-11, Vol.35 (6)

2017

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Ferromagnetic nickel silicide nanowires for isolating primary CD4 + T lymphocytes

Applied physics letters, 2012-04, Vol.100 (16), p.163703-163703-4

2012

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Bismuth-zinc-niobate embedded capacitors grown at room temperature for printed circuit board applications

Applied physics letters, 2006-05, Vol.88 (19)

2006

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Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K

Applied physics letters, 2010-05, Vol.96 (20)

2010

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Realization of Π -type attenuator using Ti(N) thin films for the fourth generation of mobile telecommunications

Applied physics letters, 2007-11, Vol.91 (20), p.203502-203502-3

2007

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In situ fabrication of cobalt-doped SrFe2As2 thin films by using pulsed laser deposition with excimer laser

Applied physics letters, 2009-08, Vol.95 (6)

2009

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Realization of a high capacitance density in Bi2Mg2∕3Nb4∕3O7 pyrochlore thin films deposited directly on polymer substrates for embedded capacitor applications

Applied physics letters, 2006-12, Vol.89 (23)

2006

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A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Ti(N) thin film resistors for 20 dB Π -type attenuator applications

Applied physics letters, 2007-05, Vol.90 (18), p.183506-183506-3

2007

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Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116 , 104905 (2014)]

Journal of applied physics, 2014-10, Vol.116 (16)

2014

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A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Potassium-doped BaFe 2 As 2 superconducting thin films with a transition temperature of 40 K

Applied physics letters, 2010-05, Vol.96 (20), p.202505-202505-3

2010

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Effect of annealing temperature on structural and electrical properties of tantalum nitride thin film resistors deposited on SiO2∕Si substrates by dc sputtering technique

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.682-685

2006

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In situ fabrication of cobalt-doped SrFe 2 As 2 thin films by using pulsed laser deposition with excimer laser

Applied physics letters, 2009-08, Vol.95 (6), p.062507-062507-3

2009

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Ti(N) thin film resistors for 20dB Π-type attenuator applications

Applied physics letters, 2007-04, Vol.90 (18)

2007

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Intrinsic ferromagnetic properties of Ti0.94Fe0.06O2∕Ti0.94Mn0.06O2 superlattice films for dilute magnetic semiconductor applications

Applied physics letters, 2006-10, Vol.89 (16)

2006

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Intrinsic ferromagnetic properties of Ti 0.94 Fe 0.06 O 2 ∕ Ti 0.94 Mn 0.06 O 2 superlattice films for dilute magnetic semiconductor applications

Applied physics letters, 2006-10, Vol.89 (16), p.162109-162109-3

2006

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Realization of a high capacitance density in Bi 2 Mg 2 ∕ 3 Nb 4 ∕ 3 O 7 pyrochlore thin films deposited directly on polymer substrates for embedded capacitor applications

Applied physics letters, 2006-12, Vol.89 (23), p.232910-232910-3

2006

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Bismuth-zinc-niobate embedded capacitors grown at room temperaturefor printed circuit board applications

Applied physics letters, 2006-05, Vol.88 (19), p.192902-192902-3

2006

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Effect of the deposition temperature on temperature coefficient of resistance in CuNi thin film resistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-11, Vol.22 (6), p.2698-2701

2004

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Effect of film thickness on the electrical properties of tantalum nitride thin films deposited on SiO2∕Si substrates for Π-type attenuator applications

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-05, Vol.24 (3), p.1398-1401

2006

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Effect of film thickness on the electrical properties of tantalum nitride thin films deposited on Si O 2 ∕ Si substrates for Π -type attenuator applications

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-05, Vol.24 (3), p.1398-1401

2006

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Effect of annealing temperature on structural and electrical propertiesof tantalum nitride thin film resistors deposited on SiO 2 ∕ Si substratesby dc sputtering technique

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.682-685

2006

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Maximum Li storage in Si nanowires for the high capacity three-dimensional Li-ion battery

Micro electrical impedance spectroscopy on a needle for ex vivo discrimination between human normal and cancer renal tissues

Thermal stability and small-signal characteristics of AlGaN/GaN HEMTs with gate insertion metal layer for millimeter-wave applications

Ferromagnetic nickel silicide nanowires for isolating primary CD4 + T lymphocytes

Bismuth-zinc-niobate embedded capacitors grown at room temperature for printed circuit board applications

Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K

Realization of Π -type attenuator using Ti(N) thin films for the fourth generation of mobile telecommunications

In situ fabrication of cobalt-doped SrFe2As2 thin films by using pulsed laser deposition with excimer laser

Realization of a high capacitance density in Bi2Mg2∕3Nb4∕3O7 pyrochlore thin films deposited directly on polymer substrates for embedded capacitor applications

A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Ti(N) thin film resistors for 20 dB Π -type attenuator applications

Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116 , 104905 (2014)]

A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Potassium-doped BaFe 2 As 2 superconducting thin films with a transition temperature of 40 K

Effect of annealing temperature on structural and electrical properties of tantalum nitride thin film resistors deposited on SiO2∕Si substrates by dc sputtering technique

In situ fabrication of cobalt-doped SrFe 2 As 2 thin films by using pulsed laser deposition with excimer laser

Ti(N) thin film resistors for 20dB Π-type attenuator applications

Intrinsic ferromagnetic properties of Ti0.94Fe0.06O2∕Ti0.94Mn0.06O2 superlattice films for dilute magnetic semiconductor applications

Intrinsic ferromagnetic properties of Ti 0.94 Fe 0.06 O 2 ∕ Ti 0.94 Mn 0.06 O 2 superlattice films for dilute magnetic semiconductor applications

Realization of a high capacitance density in Bi 2 Mg 2 ∕ 3 Nb 4 ∕ 3 O 7 pyrochlore thin films deposited directly on polymer substrates for embedded capacitor applications

Bismuth-zinc-niobate embedded capacitors grown at room temperaturefor printed circuit board applications

Effect of the deposition temperature on temperature coefficient of resistance in CuNi thin film resistors

Effect of film thickness on the electrical properties of tantalum nitride thin films deposited on SiO2∕Si substrates for Π-type attenuator applications

Effect of film thickness on the electrical properties of tantalum nitride thin films deposited on Si O 2 ∕ Si substrates for Π -type attenuator applications

Effect of annealing temperature on structural and electrical propertiesof tantalum nitride thin film resistors deposited on SiO 2 ∕ Si substratesby dc sputtering technique

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