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Topological Mott transistor with high current density based on hydrogen-terminated diamond

Applied physics letters, 2023-12, Vol.123 (26)

2023

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Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide

Applied physics letters, 2008-07, Vol.93 (2), p.024101-024101-3

2008

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Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film

Applied physics letters, 2011-02, Vol.98 (7)

2011

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Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

Applied physics letters, 2007-01, Vol.90 (2)

2007

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Reconfigurable gradient index using VO2 memory metamaterials

Applied physics letters, 2011-07, Vol.99 (4)

2011

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Electrical oscillations induced by the metal-insulator transition in VO2

Journal of applied physics, 2010-01, Vol.107 (2)

2010

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Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices

Applied physics letters, 2005-06, Vol.86 (24)

2005

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Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film

Applied physics letters, 2008-04, Vol.92 (16), p.162903-162903-3

2008

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Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

APL materials, 2016-02, Vol.4 (2), p.026101-026101-7

2016

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Negative-differential-resistance-switching Si-transistor operated by power pulse and identity of Zener breakdown

Applied physics letters, 2013-10, Vol.103 (17)

Kim, Hyun-Tak

2013

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Photo-assisted bistable switching using Mott transition in two-terminal VO 2 device

Applied physics letters, 2012-01, Vol.100 (1), p.011908-011908-3

2012

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Erratum: “Negative-differential-resistance-switching Si-transistor operated by power pulse and identity of Zener breakdown,” [Appl. Phys. Lett. 103 , 173501 (2013)]

Applied physics letters, 2014-02, Vol.104 (5)

Kim, Hyun-Tak

2014

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Direct observation of the M2 phase with its Mott transition in a VO2 film

Applied physics letters, 2016-12, Vol.109 (23)

2016

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Photo-assisted bistable switching using Mott transition in two-terminal VO2 device

Applied physics letters, 2012-01, Vol.100 (1)

2012

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Evolution of local work function in epitaxial VO 2 thin films spanning the metal-insulator transition

Applied physics letters, 2012-11, Vol.101 (19), p.191605

2012

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Evolution of local work function in epitaxial VO2 thin films spanning the metal-insulator transition

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Growth optimization and electrical characteristics of VO2 films on amorphous SiO2/Si substrates

Journal of applied physics, 2004-02, Vol.95 (3), p.1407-1411

2004

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Two-dimensional reconfigurable gradient index memory metasurface

Applied physics letters, 2013-06, Vol.102 (22)

2013

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Phase and structural characterization of vanadium oxide films grown on amorphous SiO2/Si substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-05, Vol.22 (3), p.719-724

2004

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Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor

Applied physics letters, 2009-12, Vol.95 (23), p.231910-231910-3

2009

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Erratum: “Electrical oscillations induced by the metal-insulator transition in VO2” [J. Appl. Phys. 107, 023702 (2010)]

Journal of applied physics, 2010-03, Vol.107 (6)

2010

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A near-field study of VO2/(100)TiO2 film and its crack-induced strain relief

Applied physics letters, 2022-07, Vol.121 (2)

2022

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X-ray diffraction and Rutherford backscattering spectrometry of Ba1NbxTi1−xO3 thin films synthesized by laser ablation

Journal of applied physics, 1999-08, Vol.86 (4), p.2307-2310

1999

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Reconfigurable gradient index using VO 2 memory metamaterials

Applied physics letters, 2011-07, Vol.99 (4), p.044103-044103-3

2011

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Nanopattern enabled terahertz all-optical switching on vanadiumdioxide thin film

Applied physics letters, 2011-02, Vol.98 (7), p.071105-071105-3

2011

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Topological Mott transistor with high current density based on hydrogen-terminated diamond

Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide

Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film

Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

Reconfigurable gradient index using VO2 memory metamaterials

Electrical oscillations induced by the metal-insulator transition in VO2

Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices

Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film

Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

Negative-differential-resistance-switching Si-transistor operated by power pulse and identity of Zener breakdown

Photo-assisted bistable switching using Mott transition in two-terminal VO 2 device

Erratum: “Negative-differential-resistance-switching Si-transistor operated by power pulse and identity of Zener breakdown,” [Appl. Phys. Lett. 103 , 173501 (2013)]

Direct observation of the M2 phase with its Mott transition in a VO2 film

Photo-assisted bistable switching using Mott transition in two-terminal VO2 device

Evolution of local work function in epitaxial VO 2 thin films spanning the metal-insulator transition

Evolution of local work function in epitaxial VO2 thin films spanning the metal-insulator transition

Growth optimization and electrical characteristics of VO2 films on amorphous SiO2/Si substrates

Two-dimensional reconfigurable gradient index memory metasurface

Phase and structural characterization of vanadium oxide films grown on amorphous SiO2/Si substrates

Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor

Erratum: “Electrical oscillations induced by the metal-insulator transition in VO2” [J. Appl. Phys. 107, 023702 (2010)]

A near-field study of VO2/(100)TiO2 film and its crack-induced strain relief

X-ray diffraction and Rutherford backscattering spectrometry of Ba1NbxTi1−xO3 thin films synthesized by laser ablation

Reconfigurable gradient index using VO 2 memory metamaterials

Nanopattern enabled terahertz all-optical switching on vanadiumdioxide thin film

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