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Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

Applied physics letters, 2002-03, Vol.80 (10), p.1737-1739

2002

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SiGeC/Si superlattice microcoolers

Applied physics letters, 2001-03, Vol.78 (11), p.1580-1582

2001

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Substitutional C fraction and the influence of C on Si dimer diffusion in Si1−yCy alloys grown on (001) and (118) Si

Applied physics letters, 2000-08, Vol.77 (9), p.1310-1312

2000

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Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy

Applied physics letters, 1997-06, Vol.70 (25), p.3413-3415

1997

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Evidence of segregation in (100) strained Si1-xGex alloys grown at low temperature by molecular beam epitaxy

Applied physics letters, 1990-01, Vol.56 (4), p.367-369

1990

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Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices

Applied physics letters, 1993-04, Vol.62 (14), p.1626-1628

1993

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Deep-level transient spectroscopy of Si/Si1−x−yGexCy heterostructures

Applied physics letters, 1998-08, Vol.73 (5), p.647-649

1998

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Characterization of SixGe1-x/Si heterostructures for device applications using spectroscopic ellipsometry

Journal of applied physics, 1993-07, Vol.74 (1), p.586-595

1993

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Growth of superconducting V3Si on Si by molecular beam epitaxial techniques

Applied physics letters, 1988-08, Vol.53 (6), p.514-516

1988

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Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

Applied physics letters, 1993-04, Vol.62 (14), p.1626-1628

1993

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Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-09, Vol.16 (5), p.2686-2689

1998

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Growth of Superconducting V sub 3 Si on Silicon by Molecular Beam Epitaxial Techniques

Applied physics letters, 1988-08, Vol.53 (6), p.514-516

1988

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Characterization of Si x Ge1− x /Si heterostructures for device applications using spectroscopic ellipsometry

Journal of applied physics, 1993-07, Vol.74 (1), p.586-595

1993

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Stabilizing the surface morphology of Si1−x−yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-07, Vol.16 (4), p.1937-1942

1998

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Evidence of segregation in (100) strained Si1− x Ge x alloys grown at low temperature by molecular beam epitaxy

Applied physics letters, 1990-01, Vol.56 (4), p.367-369

1990

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Electronic properties of Si/Si1−x−yGexCy heterojunctions

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-05, Vol.16 (3), p.1639-1643

1998

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Measurement of band offsets in Si/Si1−xGex and Si/Si1−x−yGexCy heterojunctions

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1997-07, Vol.15 (4), p.1108-1111

1997

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Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990-07, Vol.8 (4), p.908-915

1990

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The bowed string: an integral equation formulation

The Journal of the Acoustical Society of America, 1974-11, Vol.56 (S1), p.S26-S26

1974

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Observation of a (2×8) surface reconstruction on Si1− x Ge x alloys grown on (100) Si by molecular-beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1991-07, Vol.9 (4), p.2301-2306

1991

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Strain relaxation kinetics in Si1−x Ge x /Si heterostructures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989, Vol.7 (4), p.767-774

1989

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Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

SiGeC/Si superlattice microcoolers

Substitutional C fraction and the influence of C on Si dimer diffusion in Si1−yCy alloys grown on (001) and (118) Si

Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy

Evidence of segregation in (100) strained Si1-xGex alloys grown at low temperature by molecular beam epitaxy

Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices

Deep-level transient spectroscopy of Si/Si1−x−yGexCy heterostructures

Characterization of SixGe1-x/Si heterostructures for device applications using spectroscopic ellipsometry

Growth of superconducting V3Si on Si by molecular beam epitaxial techniques

Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy

Growth of Superconducting V sub 3 Si on Silicon by Molecular Beam Epitaxial Techniques

Characterization of Si x Ge1− x /Si heterostructures for device applications using spectroscopic ellipsometry

Stabilizing the surface morphology of Si1−x−yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source

Evidence of segregation in (100) strained Si1− x Ge x alloys grown at low temperature by molecular beam epitaxy

Electronic properties of Si/Si1−x−yGexCy heterojunctions

Measurement of band offsets in Si/Si1−xGex and Si/Si1−x−yGexCy heterojunctions

Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)

The bowed string: an integral equation formulation

Observation of a (2×8) surface reconstruction on Si1− x Ge x alloys grown on (100) Si by molecular-beam epitaxy

Strain relaxation kinetics in Si1−x Ge x /Si heterostructures

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