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Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Applied physics letters, 2011-07, Vol.99 (4)

2011

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High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation

Applied physics letters, 2011-02, Vol.98 (6)

2011

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High-quality molecular-beam-epitaxy-grown Ga2O3(Gd2O3) on Ge (100): Electrical and chemical characterizations

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.C3-C3A4

2010

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Pretilt angle control for single-cell-gap transflective liquid crystal cells

Applied physics letters, 2008-03, Vol.92 (9), p.091102-091102-3

2008

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Direct determination of flat-band voltage for metal/high κ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation

Applied physics letters, 2011-04, Vol.98 (17), p.171902-171902-3

2011

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Low interfacial trap density and sub-nm equivalent oxide thickness in In 0.53 Ga 0.47 As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO 2 /Al 2 O 3 as gate dielectrics

Applied physics letters, 2011-07, Vol.99 (4), p.042908-042908-3

2011

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Ga 2 O 3 ( Gd 2 O 3 ) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices

Applied physics letters, 2009-05, Vol.94 (20), p.202108-202108-3

2009

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Direct determination of flat-band voltage for metal/high {kappa} oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation

Applied physics letters, 2011-04, Vol.98 (17)

2011

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Electronic structures of Ga 2 O 3 (Gd 2 O 3 ) gate dielectric on n -Ge(001) as grown and after CF 4 plasma treatment: A synchrotron-radiation photoemission study

Journal of applied physics, 2011-03, Vol.109 (6), p.063725-063725-6

2011

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High-resolution core-level photoemission study of CF 4 -treated Gd 2 O 3 ( Ga 2 O 3 ) gate dielectric on Ge probed by synchrotron radiation

Applied physics letters, 2011-02, Vol.98 (6), p.062903-062903-3

2011

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Electronic structures of Ga2O3(Gd2O3) gate dielectric on n -Ge(001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study

Journal of applied physics, 2011-03, Vol.109 (6)

2011

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Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics

Applied physics letters, 2011-07, Vol.99 (4)

2011

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High-resolution core-level photoemission study of CF{sub 4}-treated Gd{sub 2}O{sub 3}(Ga{sub 2}O{sub 3}) gate dielectric on Ge probed by synchrotron radiation

Applied physics letters, 2011-02, Vol.98 (6)

2011

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Infrared absorption of C{sub 6}H{sub 5}SO{sub 2} detected with time-resolved Fourier-transform spectroscopy

The Journal of chemical physics, 2007-04, Vol.126 (13)

2007

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Detection of ClSO with time-resolved Fourier-transform infrared absorption spectroscopy

The Journal of chemical physics, 2004-02, Vol.120 (7), p.3179-3184

2004

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Si metal-oxide-semiconductor devices with high κ HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-05, Vol.26 (3), p.1178-1181

2008

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Si metal-oxide-semiconductor devices with high κ Hf O 2 fabricated using a novel MBE template approach followed by atomic layer deposition

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-05, Vol.26 (3), p.1178-1181

2008

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Quantum confinement effects across two-dimensional planes in MoS2 quantum dots

Applied physics letters, 2015-06, Vol.106 (23)

2015

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An architecture for integrating planar and 3D cQED devices

Applied physics letters, 2016-07, Vol.109 (4)

2016

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The large enriched germanium experiment for neutrinoless double beta decay (LEGEND)

AIP Conference Proceedings, 2017, Vol.1894 (1)

2017

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First-principles study of monolayer Be2C as an anode material for lithium-ion batteries

Journal of applied physics, 2019-09, Vol.126 (12)

2019

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Broadband generation of photon-pairs from a CMOS compatible device

Applied physics letters, 2020-06, Vol.116 (22)

2020

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Optical identification of oxygen vacancy types in SnO2 nanocrystals

Applied physics letters, 2013-01, Vol.102 (3)

2013

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Effects of polarization-charge shielding and electromagnetic resonances on water behavior under microwave heating

Physics of plasmas, 2023-12, Vol.30 (12)

2023

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Controlling the crystallization of Nd-doped Bi4Ti3O12 thin-films for lead-free energy storage capacitors

Journal of applied physics, 2020-06, Vol.127 (22)

2020

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Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation

High-quality molecular-beam-epitaxy-grown Ga2O3(Gd2O3) on Ge (100): Electrical and chemical characterizations

Pretilt angle control for single-cell-gap transflective liquid crystal cells

Direct determination of flat-band voltage for metal/high κ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation

Low interfacial trap density and sub-nm equivalent oxide thickness in In 0.53 Ga 0.47 As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO 2 /Al 2 O 3 as gate dielectrics

Ga 2 O 3 ( Gd 2 O 3 ) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices

Direct determination of flat-band voltage for metal/high {kappa} oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation

Electronic structures of Ga 2 O 3 (Gd 2 O 3 ) gate dielectric on n -Ge(001) as grown and after CF 4 plasma treatment: A synchrotron-radiation photoemission study

High-resolution core-level photoemission study of CF 4 -treated Gd 2 O 3 ( Ga 2 O 3 ) gate dielectric on Ge probed by synchrotron radiation

Electronic structures of Ga2O3(Gd2O3) gate dielectric on n -Ge(001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics

High-resolution core-level photoemission study of CF{sub 4}-treated Gd{sub 2}O{sub 3}(Ga{sub 2}O{sub 3}) gate dielectric on Ge probed by synchrotron radiation

Infrared absorption of C{sub 6}H{sub 5}SO{sub 2} detected with time-resolved Fourier-transform spectroscopy

Detection of ClSO with time-resolved Fourier-transform infrared absorption spectroscopy

Si metal-oxide-semiconductor devices with high κ HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition

Si metal-oxide-semiconductor devices with high κ Hf O 2 fabricated using a novel MBE template approach followed by atomic layer deposition

Quantum confinement effects across two-dimensional planes in MoS2 quantum dots

An architecture for integrating planar and 3D cQED devices

The large enriched germanium experiment for neutrinoless double beta decay (LEGEND)

First-principles study of monolayer Be2C as an anode material for lithium-ion batteries

Broadband generation of photon-pairs from a CMOS compatible device

Optical identification of oxygen vacancy types in SnO2 nanocrystals

Effects of polarization-charge shielding and electromagnetic resonances on water behavior under microwave heating

Controlling the crystallization of Nd-doped Bi4Ti3O12 thin-films for lead-free energy storage capacitors

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