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What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

Journal of applied physics, 2018-11, Vol.124 (18)

2018

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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Applied physics letters, 2014-09, Vol.105 (11)

2014

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Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography

Applied physics letters, 2015-02, Vol.106 (7)

2015

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Structure and strain relaxation effects of defects in InxGa1−xN epilayers

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Journal of applied physics, 2013-02, Vol.113 (7)

2013

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Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires

Applied physics letters, 2020-09, Vol.117 (12)

2020

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Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates

Journal of applied physics, 2019-06, Vol.125 (22)

2019

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Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

Applied physics letters, 2016-11, Vol.109 (22)

2016

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Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

Journal of applied physics, 2014-07, Vol.116 (3)

2014

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Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Journal of applied physics, 2015-03, Vol.117 (11), p.115705

2015

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Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires

Applied physics letters, 2020-09, Vol.117 (12)

2020

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Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Journal of applied physics, 2014-10, Vol.116 (15)

2014

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Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

Applied physics letters, 2016-12, Vol.109 (23)

2016

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Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Applied physics letters, 2013-06, Vol.102 (25)

2013

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Microstructural dependency of optical properties of m -plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Applied physics letters, 2015-08, Vol.107 (8)

2015

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Erratum: “Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction” [J. Appl. Phys. 114, 053520 (2013)]

Journal of applied physics, 2013-12, Vol.114 (21)

2013

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The microstructure of non-polar a-plane (11 2 ¯ 0) InGaN quantum wells

Journal of applied physics, 2016-05, Vol.119 (17)

2016

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Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure

Journal of applied physics, 2018-03, Vol.123 (10)

2018

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Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction

Journal of applied physics, 2013-08, Vol.114 (5)

2013

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Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

APL materials, 2014-12, Vol.2 (12), p.126101-126101-5

2014

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Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)

Journal of applied physics, 2017-01, Vol.121 (4)

2017

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Structure and strain relaxation effects of defects in In{sub x}Ga{sub 1–x}N epilayers

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Structure and strain relaxation effects of defects in In x Ga1− x N epilayers

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires

Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Microstructural dependency of optical properties of m -plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Erratum: “Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction” [J. Appl. Phys. 114, 053520 (2013)]

The microstructure of non-polar a-plane (11 2 ¯ 0) InGaN quantum wells

Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure

Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)

Structure and strain relaxation effects of defects in In{sub x}Ga{sub 1–x}N epilayers

Structure and strain relaxation effects of defects in In x Ga1− x N epilayers

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